2007 03 01 pdf Datasheet P12 Full Text Search --- IC-ON-LINE


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2007 03 01 Datasheet PDF File

For 2007 03 01 Found Datasheets File :: 3028 Search Time::1.297ms
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				STMicroelectronics N.V.
Part No.	TN1515-600B-TR TN1515-600B -TN1515-600B-TR
OCR Text	...As A/s A W C V Unit A A July 2007 Rev 2 1/7 www.st.com 7 Characteristics TN1515-600B 1 Table 4. Symbol IGT VGT VGD IH I...03 t P (s) 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 Figure 5. Relative variation of gate ...
Description	15 A standard SCR 15标准的可控硅
File Size	75.23K / 7 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	SSM3K16CT
OCR Text	... anti-static materials. 1 2007-11-01 0.38 +0.02 -0.03 0.050.03 : Ron = 4.0 (max) (@VGS = 2.5 V) SSM3K16CT Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain-Source breakdown voltage Drain c...
Description	High-Speed Switching Applications
File Size	147.37K / 5 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STPS61L45C STPS61L45CT STPS61L45CW
OCR Text	...A 45 V 150 C 0.45 V November 2007 Rev 1 1/8 www.st.com 8 Characteristics STPS61L45C 1 Characteristics Table 2. Symb...03 1.E-03 1.E+00 3/8 Characteristics STPS61L45C Figure 7. Reverse leakage curr...
Description	Power Schottky rectifier 30 A, 45 V, SILICON, RECTIFIER DIODE, TO-247
File Size	110.01K / 8 Page	View it Online	Download Datasheet

				http:// Toshiba Semiconductor
Part No.	SSM3K15CT
OCR Text	... anti-static materials. 1 2007-11-01 0.38 +0.02 -0.03 0.050.03 SSM3K15CT Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage...
Description	High-Speed Switching Applications
File Size	147.17K / 5 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	SSM3J16CT
OCR Text	... anti-static materials. 1 2007-11-01 +0.02 0.38 -0.03 0.050.03 SSM3J16CT Electrical Characteristics (Ta = 25C) Characteristic Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage ...
Description	Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications
File Size	190.43K / 5 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	SSM3J15CT
OCR Text	... anti-static materials. 1 2007-11-01 0.38 +0.02 -0.03 0.050.03 SSM3J15CT Electrical Characteristics (Ta = 25C) Characteristic Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage ...
Description	Field Effect Transistor Silicon P-Channel MOS Type High-Speed Switching Applications Analog Switch Applications
File Size	148.86K / 5 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. ETC List of Unclassifed Manufacturers
Part No.	PSP-1G020-13TI PSP-1G010-13TI PSP-1G020 PSP-1G010
OCR Text	...Diagram Data Sheet Ver3.0 2007-08-03 Page:1/8 PSP-1G010/20-13TI SFP Optical Transceivers Absolute Maximum Ratings Parameter Supply Voltage Storage temperature Relative Humidity Symbol Vcc Min. -0.5 -40 5 Max. ...
Description	Zener Diode; Application: General; Pd (mW): 400; Vz (V): 8.1 to 8.5; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 7.7 to 8.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 7.9 to 8.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 8.3 to 8.7; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD SFP Optical Transceivers
File Size	312.40K / 8 Page	View it Online	Download Datasheet

For 2007 03 01 Found Datasheets File :: 3028 Search Time::1.297ms
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