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  20.6a Datasheet PDF File

For 20.6a Found Datasheets File :: 13559    Search Time::1.375ms    
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    Mitsubishi Electric Corporation
Part No. QM300HC-M
OCR Text ...80 f 5.5 62 48 16 8 25 22 12 12 20 22 eb e bx 64 m4 m6 27 25 21 5.5 8 b bx e e c label feb.1999 conditions i c =1a, v eb =2v v eb =2v emit...6a transistor part diode part conductive grease applied typ. max. 2.0 2.0 600 2.0 2.5 1...
Description MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE

File Size 71.64K  /  5 Page

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    MCH3316

Sanyo Semicon Device
Part No. MCH3316
OCR Text ...onditions Ratings Unit --60 20 --1.2 --4.8 1 150 --55 to +150 V V A A W C C Electrical Characteristics at Ta=25C Parameter Drain-...6A ID=-0.6A, VGS=--10V ID=-0.3A, VGS=--4V VDS=-20V, f=1MHz VDS=-20V, f=1MHz VDS=-20V, f=1MHz See spe...
Description Medium Output MOSFETs
P-Channel Silicon MOSFET General-Purpose Switching Device Applications

File Size 34.93K  /  4 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AO9926B
OCR Text ...ce voltage drain-source voltage 20 continuous drain current a maximum units parameter t a =25c t a =70c absolute maximum ratings t a =25c...6a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v g...
Description Dual N-Channel Enhancement Mode Field Effect Transistor

File Size 194.39K  /  4 Page

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    AP9926GEO-HF AP9926GEO-HF-14

Advanced Power Electronics Corp.
Advanced Power Electronics ...
Part No. AP9926GEO-HF AP9926GEO-HF-14
OCR Text ...ter rating drain-source voltage 20 gate-source voltage + 12 continuous drain current 3 4.6 continuous drain current 3 3.7 pulsed drain curr...6a - 9.7 - s i dss drain-source leakage current v ds =20v, v gs =0v - - 1 ua drain-source leakage cu...
Description Capable of 2.5V Gate Drive, Surface Mount Package
Low On-resistance

File Size 57.02K  /  4 Page

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    IRF7380

International Rectifier
Part No. IRF7380
OCR Text ... Temperature Range Max. 80 20 3.6 2.9 29 2.0 0.02 2.3 -55 to + 150 Units V A W W/C V/ns C Thermal Resistance Parameter RJL ...6A RDS(on), Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current () 2.0 ...
Description 80V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
High frequency DC-DC converters

File Size 503.95K  /  8 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AON2260
OCR Text ...mbient a a parameter typ max v 20 gate-source voltage c/w maximum junction-to-ambient a d 80 w t a =70c 1.8 t a =25c c/w r q ja 37 66 junc...6a gate source charge gate drain charge total gate charge turn-on rise time v =10v, v =30v, r =5 w ,...
Description 60V N-Channel MOSFET

File Size 262.41K  /  5 Page

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    L4964 L4964HT

STMicroelectronics
Part No. L4964 L4964HT
OCR Text ...Value 36 38 -1 -7 10 5.5 7 Vi 1 20 50 20 - 40 to 150 Unit V V V V V V V mA mA mA W C THERMAL DATA Symbol Rth j-case Rth j-amb 4/13 Param...6a Output Leakage Current mA 6a SOFT START I5so I5si INHIBIT V6L V6H - I6L -I6H V9H V9L ...
Description HIGH CURRENT SWITCHING REGULATOR

File Size 206.60K  /  13 Page

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    STM8360T

SamHop Microelectronics Corp.
Part No. STM8360T
OCR Text 20 t c =25 c gate-source voltage drain-source voltage thermal characteristics mj product summary (n-channel) v dss i d r ds(on) (m ) max 40v 6.6a 45 @ vgs=4.5v 29 @ vgs=10v dual enhancement mode field effect transistor (n and p chann el) ...
Description Dual Enhancement Mode Field Effect Transistor (N and P Channel)

File Size 282.08K  /  11 Page

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