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				Hamamatsu Corporation
Part No.	S4707-01
OCR Text	...m A/W A nA MHz pF =p 100 lx, 2856 K VR=10 V VR=10 V, RL=50 -3 dB, =780 nm VR=10 V, f=1 MHz 1 Si PIN photodiode s Spectral response 0.7 0.6 QE=100 % (Typ. Ta=25 C) S4707-01 s Dark current vs. reverse voltage 1 nA (Typ. Ta=...
Description	Si PIN photodiode
File Size	86.64K / 2 Page	View it Online	Download Datasheet

				Hamamatsu Corporation
Part No.	S593005 S5931-1024S S5931-512S S5930-512S S5930-256S
OCR Text	...RNU 3 2: Vb=2.0 V, V=5.0 V 3: 2856 K, tungsten lamp *4: 50 % of saturation, excluding the start pixel and last pixel S5930 series Typ. Max. 50 2.5 - Min. - S5931 series Typ. Max. 25 2.5 200 to 1000 600 0.1 0.003 10 180 25 0.3 0.0...
Description	NMOS linear image sensor Built-in thermoelectric cooler ensures long exposure time and stable operation.
File Size	214.00K / 6 Page	View it Online	Download Datasheet

				Hamamatsu Corporation
Part No.	S6036-01
OCR Text	... dB VR=12 V, f=1 MHz =p 100 lx, 2856 K VR=12 V Condition Min. 0.51 24 10 S6036 Typ. 320 to 1100 960 0.56 30 0.1 1.15 25 15 25 Max. 10 30 Min. 0.51 13 10 S6036-01 Typ. 760 to 1100 960 0.56 17 0.1 1.15 25 15 25 Max. 10 30 Unit nm nm A/W A nA ...
Description	Si PIN photodiode 7 mm lens plastic package
File Size	85.66K / 2 Page	View it Online	Download Datasheet

				Hamamatsu Corporation
Part No.	S6337-01
OCR Text	...A/W A pA s nF M % =p 100 lx, 2856 K VR=10 mV VR=0 V, RL=1 k, =660 nm VR=0 V, f=10 kHz VR=10 mV Within 80 % of active area =190 to 1100 nm s Sensitivity uniformity (typical example, =1100 nm) S6337-01 (18 x 18 mm) 120 (Ta=25 C, spot l...
Description	Large area photodiode for UV to IR, precision photometry
File Size	94.24K / 2 Page	View it Online	Download Datasheet

				Hamamatsu Corporation
Part No.	S6968-01 S6801-01 S6801 S6968
OCR Text	...hort circuit current Isc 100 lx 2856 K Dark current ID VR=10 V Cut-off Terminal frequency capacitance Half * fc Ct VR=10 V angle VR=10 V RL=50 f=1 MHz =850 nm, -3 dB Max. Min. Typ. Typ. Max. (nA) (times/ C) (MHz) (MHz) (pF) (pF) (degree) T...
Description	Si PIN photodiode ヵ14 mm lens plastic package Si PIN photodiode φ14 mm lens plastic package
File Size	98.38K / 2 Page	View it Online	Download Datasheet

				Hamamatsu Corporation
Part No.	S8377-512Q S8377-256Q S8377-128Q S8378-256Q S8378-1024Q S8378-512Q S8377
OCR Text	...asured with a tungsten lam p of 2856 K. *7: Photo response non-uniform ity is defined under the condition that the device is uniform ly illum inated by light which is 50 % of the saturation exposure level as follows: PRNU= X/X x 100 (% ) X:...
Description	CMOS linear image sensor Built-in timing generator and signal processing circuit; single 5 V supply operation
File Size	89.43K / 6 Page	View it Online	Download Datasheet

				Hamamatsu Corporation
Part No.	S8380-512Q S8380-256Q S8380-128Q S8381-1024Q S8381-256Q S8381-512Q S8380
OCR Text	... PRNU 4: Vb=2.0 V, V=5.0 V 5: 2856 K, tungsten lamp *6: 50 % of saturation, excluding the start pixel and last pixel s Electrical characteristics (Ta=25 C) P a ra m e te r Clock pulse (1, 2) voltage S ym b o l C ondition High V1, V2 (...
Description	NMOS linear image sensor NMOS linear image sensors with high IR sensitivity
File Size	144.87K / 4 Page	View it Online	Download Datasheet

				Hamamatsu Corporation
Part No.	S8865-256 S8865-256G
OCR Text	...ime ts=1 ms 7: Measured with a 2856 K tungsten lamp 8: When the photodiode array is exposed to uniform light which is 50 % of the saturation exposure, the Photo Response NonUniformity (PRNU) is defined as follows: PRNU = X/X x 100 (%) whe...
Description	Photodiode array combined with signal processing circuit chip
File Size	88.68K / 6 Page	View it Online	Download Datasheet

				Hamamatsu Corporation
Part No.	S8865-64 S8865-128 S8865
OCR Text	...ime ts=1 ms 7: Measured with a 2856 K tungsten lamp. 8: When the photodiode array is exposed to uniform light which is 50 % of the saturation exposure, the Photo Response NonUniformity (PRNU) is defined as follows: PRNU = DX/X x 100 (%) w...
Description	Photodiode array combined with signal processing circuit chip
File Size	173.10K / 6 Page	View it Online	Download Datasheet

				OSRAM GmbH
Part No.	BP104S01
OCR Text	...te (TA = 25 C, Normlicht A, T = 2856 K) Characteristics (TA = 25 C, standard light A, T = 2856 K) Bezeichnung Parameter Fotostrom VR = 5 V Photocurrent Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Berei...
Description	Silizium-PIN-Fotodiode Silicon PIN Photodiode
File Size	79.72K / 5 Page	View it Online	Download Datasheet

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