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  2-18ghz Datasheet PDF File

For 2-18ghz Found Datasheets File :: 365    Search Time::0.922ms    
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    EPA018A

Excelics Semiconductor, Inc.
Part No. EPA018A
OCR Text ...m dB % dB dB 80 mA mS -2.5 V V V C/W Thermal Resistance (Au-Sn Eutectic Attach) * P1dB = 21.5dBm can be obtained with 8v/50% Idss bias. Consult factory for wafer selection. MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Ids I...
Description 6-12V high efficiency heterojunction power FET

File Size 28.98K  /  2 Page

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    Filtronic Compound Semi...
FILTRONIC[Filtronic Compound Semiconductors]
Part No. LMA184
OCR Text ...nput/Output Return Loss Typical 2-18ghz Frequency Bandwidth +4 Volts Dual Bias Supply DC Decoupled RF Output Chip Size : 1.62mmX2.38mm (.064"X.094") Chip Thickness : 100m 2 Pad Dimension : 100m 2-18 GHz MESFET Amplifier LMA184 Desc...
Description 2-18 GHz MESFET Amplifier

File Size 67.13K  /  3 Page

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    EPA018BV

Excelics Semiconductor, Inc.
Part No. EPA018BV
OCR Text ...m dB % dB dB 80 mA mS -2.5 V V V C/W Thermal Resistance (Au-Sn Eutectic Attach) * P1dB = 21.5dBm can be obtained with 8v/50% Idss bias. Consult factory for wafer selection. MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Ids I...
Description High Efficiency Heterojunction Power FET

File Size 41.28K  /  2 Page

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    EPA018B

Excelics Semiconductor, Inc.
Part No. EPA018B
OCR Text ...5 13.0 48 0.75 12.5 % dB dB 80 -2.5 mA mS V V V o MAX UNITS dBm dB Power Added Efficiency at 1dB Compression Vds=6V, Ids=50% Idss Noise Figure, f = 12GHz VDS = 2 V, IDS 15 mA Associated Gain, f = 12GHz VDS = 2 V, IDS 15 mA Satur...
Description High Efficiency Heterojunction Power FET

File Size 89.14K  /  3 Page

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    Filtronic Compound Semi...
FILTRONIC[Filtronic Compound Semiconductors]
Part No. LMA183
OCR Text ...nput/Output Return Loss Typical 2-18ghz Frequency Bandwidth +4 Volts Dual Bias Supply DC Decoupled RF Output Chip Size : 1.62mmX2.38mm (.064"X.094") Chip Thickness : 100m 2 Pad Dimension : 100m . 2-18 GHz MESFET Amplifier LMA183 De...
Description 2-18 GHz MESFET Amplifier

File Size 63.58K  /  3 Page

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    TELEDYNE TECHNOLOGIES INC
Part No. CCT-38S16O-TD
OCR Text ... max t ermination s: 50 o hm 2 wa tts cw max c onnectors: sma (f) weight: 6 o z. max t emperature range: -40 o c to +65 o c (ope...18ghz no rma lly open ana log ttl indicators ser ies connectors actuator v olt age part numbering s...
Description 0 MHz - 18000 MHz RF/MICROWAVE SGL POLE SIX THROW SWITCH

File Size 377.83K  /  2 Page

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    EPB025A

Excelics Semiconductor, Inc.
ETC[ETC]
Part No. EPB025A
OCR Text ... 50 80 -1.0 80 mA mS -2.5 V V V o Drain Breakdown Voltage Igd=10uA Source Breakdown Voltage Igs=10uA Thermal Resistance (Au-Sn Eutectic Attach) -3 -3 -5 -5 155 C/W MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS ABSO...
Description Low Noise High Gain Heterojunction FET

File Size 21.21K  /  2 Page

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    EFC240B

List of Unclassifed Manufacturers
ETC[ETC]
Excelics Semiconductor, Inc.
Part No. EFC240B
OCR Text ...dBm dB % 320 200 520 280 -2.5 720 mA mS -4.0 V V V o Drain Breakdown Voltage Igd=2.4mA Source Breakdown Voltage Igs=2.4mA Thermal Resistance (Au-Sn Eutectic Attach) -15 -10 -20 -17 20 C/W MAXIMUM RATINGS AT...
Description Low Distortion GaAs Power FET

File Size 27.53K  /  2 Page

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    TC1606

Transcom, Inc.
Part No. TC1606
OCR Text ...drain-source current at v ds = 2 v, v gs = 0 v 1.2 a g m transconductance at v ds = 2 v, v gs = 0 v 850 ms v p pinch-off...18ghz swp min 2ghz s11 0 15 30 45 60 75 90 105 120 135 150 165 -180 -165 -150 -135 -120 -105 -90 -75...
Description 2W High Linearity and High Efficiency GaAs Power FETs

File Size 145.64K  /  4 Page

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