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  1440mm Datasheet PDF File

For 1440mm Found Datasheets File :: 1364    Search Time::0.766ms    
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    IPI70N10SL-16 IPP70N10SL-16 IPB70N10SL-16

Infineon Technologies AG
Part No. IPI70N10SL-16 IPP70N10SL-16 IPB70N10SL-16
OCR Text ...tegory; DIN IEC 68-1 2006-02-14 IPI70N10SL-16 IPP70N10SL-16, IPB70N10SL-16 Thermal Characteristics Parameter Characteristics Thermal ...40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB...
Description SIPMOS Power-Transistor

File Size 121.65K  /  8 Page

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    SPD30N03S2L-1008 SPD30N03S2L-10 SPD30N03S2L-10G

Infineon Technologies AG
Part No. SPD30N03S2L-1008 SPD30N03S2L-10 SPD30N03S2L-10G
OCR Text ... A 0.01 10 1 11.2 7.8 1 100 100 14.6 10 nA m Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=4.5...40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB...
Description OptiMOS Power-Transistor Feature N-Channel Enhancement mode

File Size 585.14K  /  9 Page

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    LWH1025

LUXPIA
Part No. LWH1025
OCR Text 14 lwh1025 different and better - contents - 1. features 2. outline dimensions 3. package material 4. absolute ma ximum r...40mm unloaded tape mounted with led (3,500ea) 150 ~ 380mm leading part more than 40mm unloaded t...
Description High Brightness LED Lamp

File Size 321.18K  /  14 Page

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    SDP20S3010 SDP20S30

Infineon Technologies AG
Part No. SDP20S3010 SDP20S30
OCR Text ... Symbol IF IFRMS Value 10 14 36 45 100 6.5 300 300 65 -55... +175 Unit A Surge non repetitive forward current, sine halfwave IFS...40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB...
Description Silicon Carbide Schottky Diode Switching behavior benchmark

File Size 320.55K  /  8 Page

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    SPB04N60S5 SPB04N60S507

Infineon Technologies AG
Part No. SPB04N60S5 SPB04N60S507
OCR Text 14 rev. 2.4 page 1 spb04n60s5 cool mos? power transistor v ds 600 v r ds(on) 0.95 ? i d 4.5 a feature ? new revolutionary high voltage t...40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. p...
Description Cool MOS Power Transistor Feature New revolutionary high voltage technology

File Size 357.86K  /  11 Page

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    SPD25N06S2-40

INFINEON[Infineon Technologies AG]
Part No. SPD25N06S2-40
OCR Text ...5 10 5 0 0 1 2 3 4 5 6 S 16 14 g fs V 8 VGS ID 12 10 8 6 4 2 0 0 4 8 12 16 20 24 A 32 ID Page 5 2003-05-09 SPD25N06S2-40 9 Drain-source on-resistance RDS(on) = f(Tj) parameter: ID = 13 A, VGS = 10 V 90 10 Typ. ...
Description Low Voltage MOSFETs - DPAK; 25 A; 55V; NL; 40mOhm
OptiMOS Power-Transistor

File Size 257.16K  /  8 Page

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    BSP32409 BSP324L6327

Infineon Technologies AG
Part No. BSP32409 BSP324L6327
OCR Text ... TA=25C TA=70C Value 0.17 0.14 0.68 6 20 1A (>250V, <500V) 1.8 -55... +150 55/150/56 Unit A ID Pulsed drain current TA=25C ...40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (single layer, 70 m thick) copper area for drain connection. ...
Description SIPMOS Power-Transistor
SIPMOS?/a> Power-Transistor

File Size 333.06K  /  8 Page

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    SPP18P06P09 SPP18P06PG

Infineon Technologies AG
Part No. SPP18P06P09 SPP18P06PG
OCR Text ... Rev1.8 page 1 2009-04-14 SPP18P06P G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - c...40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. P...
Description SIPMOS? Power-Transistor Features P-Channel Enhancement mode
SIPMOS庐 Power-Transistor Features P-Channel Enhancement mode

File Size 446.57K  /  9 Page

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    SPP08P06P09 SPP08P06PG

Infineon Technologies AG
Part No. SPP08P06P09 SPP08P06PG
OCR Text ... Rev 1.5 Page 1 2009-04-14 SPP08P06P G Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case The...40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. PC...
Description 8.8 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
P-Channel Enhancement mode Avalanche rated dv/dt rated

File Size 320.63K  /  10 Page

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    SPD08P06P08 SPD08P06PG

Infineon Technologies AG
Part No. SPD08P06P08 SPD08P06PG
OCR Text ... =1 MHz 335 105 65 16.0 46.0 48 14 420 135 95 24.0 69 72 21 pF Values typ. max. Unit Rev 1.9 page 3 2008-10-13 SPD08P06P G 1 Power dissipation P tot=f(T A) 2 Drain current I D=f(T A); |V GS|10 V 9 40 8 7 30 6 P tot [W] ...
Description SIPMOS? Power-Transistor Features P-Channel Enhancement mode
SIPMOS庐 Power-Transistor Features P-Channel Enhancement mode

File Size 547.49K  /  9 Page

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For 1440mm Found Datasheets File :: 1364    Search Time::0.766ms    
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