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  14-mohm Datasheet PDF File

For 14-mohm Found Datasheets File :: 1368    Search Time::1.531ms    
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    ARF612S15 ARF612

POSEICO[Power Semiconductors]
POSEICO SPA
Part No. ARF612S15 ARF612
OCR Text ...RD RECOVERY VOLTAGE 20 18 16 14 Tj = 150 C 12 VFR [V] 10 Tj = 25 C 8 VFR 6 4 2 0 0 200 400 600 di/dt [A/s] 800 1000 1200 IF VF REVERSE RECOVERY CHARGE Tj = 150 C 1200 1000 A REVERSE RECOVERY CURRENT Tj = 150 C 600 1...
Description FAST RECOVERY DIODE

File Size 42.45K  /  4 Page

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    BUK110-50GL

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUK110-50GL
OCR Text ...3.0 2.5 0 2 4 6 8 10 12 VDS / V 14 16 18 20 120 110 100 90 80 70 60 50 40 30 20 10 0 120 110 100 90 80 70 60 50 40 30 20 10 0 0 ...mOhm BUK110-50GL a Normalised RDS(ON) = f(Tj) 1.5 VIS / V = 3 3.5 4 4.5 5 1.0 ...
Description PowerMOS transistor Logic level TOPFET

File Size 109.38K  /  11 Page

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    BUK7230-55A

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUK7230-55A
OCR Text ... 12 - - - - - - - - 864 218 139 14 68 83 43 2.5 1152 262 191 - - - - - pF pF pF ns ns ns ns nH - - 26 - 30 60 m m - - - 0.05 - 2 10 500 100 ...mOhm) 50 12 45 40 10 9 8 7 20 6 15 4.5 10 5 10 15 35 30 25 03na44 2 4 6 8 VDS(V) ...
Description TrenchMOS standard level FET
TrenchMOS TM standard level FET
TrenchMOS(tm) standard level FET

File Size 100.31K  /  13 Page

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    BUK7528-100A BUK7628-100A

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. BUK7528-100A BUK7628-100A
OCR Text ...ns: ID = 1 mA; VDS = VGS Fig.14. Typical turn-on gate-charge characteristics. VGS = f(QG); conditions: ID = 25 A; parameter VDS 1E-01 Sub-Threshold Conduction 100 IF/A 90 80 1E-02 2% typ 98% 70 60 Tj/C= 175 C 25 C o o ...
Description TrenchMOS(tm) transistor Standard level FET
TrenchMOS transistor Standard level FET
TrenchMOS TM transistor Standard level FET

File Size 75.37K  /  9 Page

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    Philips
Part No. BUK7528-55
OCR Text ...BUK7528-55 100 ID/A 80 16 14 12 20 VGS/V = 10.0 9.5 9.0 8.5 gfs/S 15 60 8.0 10 7.5 40 7.0 6.5 20 6.0 0 5.5 5.0 4....mOhm VGS/V = 6 40 6.5 7 Fig.8. Typical transconductance, Tj = 25 C. gfs = f(ID); conditions: VDS ...
Description TrenchMOS TM transistor Standard level FET

File Size 48.42K  /  8 Page

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    BUK9575-100A BUK9575-55

PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
Part No. BUK9575-100A BUK9575-55
OCR Text ....0 2.8 2.6 2.4 2.2 10 2.0 15 14 13 12 11 10 9 8 7 6 5 Transconductance, gfs (S) 30 20 10 0 0 5 0 2 4 VDS...mOhm Fig.8. Typical transconductance, Tj = 25 C. gfs = f(ID); conditions: VDS = 25 V BUK959-60 ...
Description TrenchMOS transistor Logic level FET
TrenchMOS(TM)transistor Logic level FET(TrenchMOS(TM)晶体管逻辑电平FET)
TrenchMOSTM)transistor Logic level FET(TrenchMOSTM)晶体管逻辑电平FET)

File Size 64.04K  /  8 Page

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    L9407F

Gilway Technical Lamp
STMicroelectronics
意法半导
Part No. L9407F
OCR Text ...200<rpm<RPMMAX; Vreg clamped at 14.8V Max. (Fig.3) preexcitation 1500<rpm<RPMMAX; Ialt=5A; Tcase=23C 5A<Ialt<Inom; rpm=6000rpm; Tcase=23C Ia...mOhm V A A A V % fsw Switching Frequency Delta Vrpm Delta Vload Vreg Vov Tj-sd Tj-sd-hys Vu...
Description    CAR ALTERNATOR VOLTAGE REGULATOR

File Size 122.80K  /  11 Page

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    PHB60N06T

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PHB60N06T
OCR Text ...SDS/V 1 1.2 1.4 Fig.14. Typical reverse diode current. IF = f(VSDS); conditions: VGS = 0 V; parameter Tj Fig.16. Avalanche energy test circuit. 2 WDSS = 0.5 LID BVDSS /(BVDSS - VDD ) + RD VDS VGS 0 RG T.U.T. VDD -...
Description TrenchMOS transistor Standard level FET

File Size 67.91K  /  8 Page

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    PHP60N06LT PHB60N06LT

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PHP60N06LT PHB60N06LT
OCR Text ... 24 23 22 21 20 19 18 17 16 15 14 1 10 VDS/V 100 RDS(ON)/mOhm 4 VGS/V = 4.2 4.4 4.6 4.8 5 13 0 10 20 30 40 ID/A 50 60 70 80 90 Fig.3. Safe operating area. Tmb = 25 C ID & IDM = f(VDS); IDM single pulse;...
Description TrenchMOS transistor Logic level FET

File Size 70.37K  /  9 Page

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    PHP60N06T

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PHP60N06T
OCR Text ...SDS/V 1 1.2 1.4 Fig.14. Typical reverse diode current. IF = f(VSDS); conditions: VGS = 0 V; parameter Tj Fig.16. Avalanche energy test circuit. 2 WDSS = 0.5 LID BVDSS /(BVDSS - VDD ) + RD VDS VGS 0 RG T.U.T. VDD -...
Description TrenchMOS transistor Standard level FET

File Size 63.71K  /  8 Page

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