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  10v 0.15a Datasheet PDF File

For 10v 0.15a Found Datasheets File :: 3379    Search Time::4.797ms    
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    APT6045BVR

ADPOW[Advanced Power Technology]
Part No. APT6045BVR
OCR Text ...> I D(on) x R DS(on) Max, VGS = 10v) 2 Drain-Source On-State Resistance (VGS = 10v, 0.5 ID[Cont.]) Ohms A nA Volts 050-5540 Rev A Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0....
Description POWER MOS V 600V 15A 0.450 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 62.90K  /  4 Page

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    APT6045SVR

Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT6045SVR
OCR Text ...> I D(on) x R DS(on) Max, VGS = 10v) 2 Drain-Source On-State Resistance (VGS = 10v, 0.5 ID[Cont.]) Ohms A nA Volts 050-5537 Rev B Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0....
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 600V 15A 0.450 Ohm

File Size 65.63K  /  4 Page

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    FTD1011

SANYO[Sanyo Semicon Device]
Part No. FTD1011
OCR Text ...=-20V, VGS=0 VGS=8V, VDS=0 VDS=-10v, ID=--1mA VDS=-10v, ID=-3A ID=--3A, VGS=-4V ID=--2A, VGS=-2.5V Ratings min --20 --1 10 --0.4 6 8.8 50 68 65 96 --1.4 typ max Unit V A A V S m m Marking : D1011 0.1 Specifications 1.0 Contin...
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 28.94K  /  4 Page

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    FTD1012

Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
Part No. FTD1012
OCR Text ...-30V, VGS=0 VGS=16V, VDS=0 VDS=-10v, ID=--1mA VDS=-10v, ID=--3A Ratings min --30 --1 10 --1.0 3.8 5.5 --2.4 typ max Unit V A A V S Marking : D1012 Continued on next page. Any and all SANYO products described or contained herein do ...
Description Load Switching Applications 负荷开关应
P-Channel Silicon MOSFET Load Switching Applications

File Size 28.66K  /  4 Page

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    FTD1014

SANYO[Sanyo Semicon Device]
Part No. FTD1014
OCR Text ...=-20V, VGS=0 VGS=8V, VDS=0 VDS=-10v, ID=--1mA VDS=-10v, ID=--2A Ratings min --20 --1 10 --0.4 4.2 6 --1.4 typ max Unit V A A V S Marking : D1014 Continued on next page. Any and all SANYO products described or contained herein do no...
Description P-Channel Silicon MOSFET Load Switching Applications

File Size 28.47K  /  4 Page

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    NTE291 NTE292

NTE[NTE Electronics]
Part No. NTE291 NTE292
OCR Text ... 4V, IC = 0.5A, f = 50kHz VCB = 10v, IC = 0, f = 1MHz Note 1. Pulsed: Pulse Duration = 300s, Duty Factor = 0.018. Note 2. CAUTION: The sustaining voltage (VCER(sus)) MUST NOT be measured on a curve tracer. .420 (10.67) Max .110 (2.79) ...
Description Silicon Complementary Transistors Medium Power Amp, Switch

File Size 23.36K  /  2 Page

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    NTE2921

NTE[NTE Electronics]
Part No. NTE2921
OCR Text ...Continuous Drain Current (VGS = 10v), ID TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....0.83C/W Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . ....
Description MOSFET N-Ch, Enhancement Mode High Speed Switch

File Size 28.65K  /  3 Page

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    NTE2956

NTE[NTE Electronics]
Part No. NTE2956
OCR Text ... = 0V VDS = 500V, VGS = 0 VDS = 10v, ID = 1mA VGS = 10v, ID = 7A VGS = 10v, ID = 7A VGS = 10v, ID = 7A Electrical Characteristics (Cont'd): (Tch = +25C unless otherwise specified) Parameter Input Capacitance Output Capacitance Reverse T...
Description MOSFET N-Channel, Enhancement Mode High Speed Switch

File Size 21.25K  /  2 Page

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    NTE2957

NTE Electronics, Inc.
Part No. NTE2957
OCR Text ... = 0V VDS = 700V, VGS = 0 VDS = 10v, ID = 1mA VGS = 10v, ID = 2A VGS = 10v, ID = 2A VGS = 10v, ID = 2A Electrical Characteristics (Cont'd): (Tch = +25C unless otherwise specified) Parameter Input Capacitance Output Capacitance Reverse T...
Description Dual Channel, 2/0, 25Mbps Digital Isolator 8-SOIC -40 to 125
MOSFET N-Channel, Enhancement Mode High Speed Switch

File Size 20.98K  /  2 Page

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    NTE2959

NTE Electronics, Inc.
Part No. NTE2959
OCR Text ... = 0V VDS = 900V, VGS = 0 VDS = 10v, ID = 1mA VGS = 10v, ID = 2A VGS = 10v, ID = 2A VGS = 10v, ID = 2A Electrical Characteristics (Cont'd): (Tch = +25C unless otherwise specified) Parameter Input Capacitance Output Capacitance Reverse T...
Description Dual Channel, 2/0, 25Mbps Digital Isolator 8-SOIC -40 to 125
MOSFET N-Channel, Enhancement Mode High Speed Switch

File Size 21.00K  /  2 Page

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