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				International Rectifier
Part No.	IRF5803D2 IRF5803D2TR
OCR Text	... 10 10 TJ = 25 C 1 100sec 1 1msec TA = 25C TJ = 150C Single Pulse 0.1 1 10 -VDS , Drain-toSource Voltage (V) 100 10msec 0.1 0.4 V GS = 0 V 0.8 1.2 1.6 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain ...
Description	FETKY MOSFET & Schottky Diode(Vdss=-40V/ Rds(on)=112ohm) -40V FETKY - MOSFET and Schottky Diode in a SO-8 package FETKY MOSFET & Schottky Diode(Vdss=-40V, Rds(on)=112ohm) FETKY⑩ MOSFET & Schottky Diode(Vdss=-40V, Rds(on)=112ohm) FETKY?/a> MOSFET & Schottky Diode(Vdss=-40V, Rds(on)=112ohm)
File Size	125.10K / 11 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF5803 IRF5803TR
OCR Text	... 10 10 TJ = 25 C 1 100sec 1 1msec TA = 25C TJ = 150C Single Pulse 0.1 1 10 -VDS , Drain-toSource Voltage (V) 100 10msec 0.1 0.4 V GS = 0 V 0.8 1.2 1.6 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain ...
Description	Power MOSFET(Vdss=-40V) 功率MOSFET0V的减振钢板基本\u003d- -40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
File Size	107.70K / 9 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRF5804
OCR Text	... (on) 10 1 TJ = 25 C 100sec 1 1msec Tc = 25C Tj = 150C Single Pulse 1 10 10msec 100 1000 0.1 0.4 V GS = 0 V 0.6 0.7 0.9 1.1 1.2 1.4 0.1 -VSD ,Source-to-Drain Voltage (V) -V DS , Drain-toSource Voltage (V) Fig ...
Description	Power MOSFET(Vdss=-40V) 功率MOSFET0V的减振钢板基本\u003d-
File Size	98.08K / 9 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. Philips Semiconductors
Part No.	74ABT16952 74ABT16952DGG 74ABT16952DL BH16B952DGG BT16952DGG BT16952DL BH16952DGG BH16952DL 74ABTH16952DGG
OCR Text	... 10% a transition time of up to 100sec is permitted. 5. Unused pins at VCC or GND. 6. This is the bus hold overdrive current required to force the input to the opposite logic state. AC CHARACTERISTICS GND = 0V; tR = tF = 2.5ns; CL = 50p...
Description	Triple 3-input positive-NOR gates 14-SOIC 0 to 70 ABT SERIES, DUAL 8-BIT REGISTERED TRANSCEIVER, TRUE OUTPUT, PDSO56 RES, 5.1, 1/4W, TKF, 5%, 1210 16-bit registered transceiver 3-State
File Size	87.58K / 12 Page	View it Online	Download Datasheet

				http:// NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	74LVT534 74LVT534D 74LVT534DB 74LVT534PW 74LVT534PWDH 74LVT534_2
OCR Text	...3.3V 0.3V a transition time of 100sec is permitted. This parameter is valid for Tamb = 25C only. 4. Unused pins at VCC or GND. 5. For valid test results, data must not be loaded into the flip-flops (or latches) after applying power. 6. ICC...
Description	inverting (3-State) From old datasheet system 3.3V Octal D-type flip-flop; inverting 3-State 3.3V Octal D-type flip-flop inverting 3-State
File Size	100.33K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7450
OCR Text	...(A) 10 TJ = 150 C 10 100sec 1 TJ = 25 C 1 T A = 25C T J = 150C 0.1 Single Pulse 1 10 100 1msec 10msec 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 VSD ,Source-to-Drain Voltage (V) 1000 VDS , Drain-toSo...
Description	SMPS MOSFET
File Size	100.88K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7453
OCR Text	...ent (A) 10 TJ = 150 C 100sec 1 T A = 25C T J = 150C Single Pulse 1 10 100 10msec 1000 1 1msec TJ = 25 C 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 0.1 VSD ,Source-to-Drain Voltage (V) VDS , Drain-toSource Vol...
Description	Power MOSFET(Vdss=250V, Id=2.2A)
File Size	163.18K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7465
OCR Text	... TJ = 150 C TJ = 25 C 1 100sec 1 1msec T A = 25C T J = 150C 0.1 Single Pulse 1 10 100 1000 10msec 0.1 0.4 V GS = 0 V 0.6 0.8 1.0 VSD ,Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 7. Typical Sourc...
Description	Power MOSFET(Vdss=150V/ Id=1.9A) Power MOSFET(Vdss=150V, Id=1.9A)
File Size	104.91K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7484
OCR Text	...everse Drain Current (A) 100 100sec 10 1msec 10msec Tc = 25C Tj = 150C Single Pulse 0 1 10 100 1000 10 T J = 25C 1 1 VGS = 0V 0.10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Source-to-Drain Voltage (V) 0.1 VDS , Drain-toSource Vo...
Description	HEXFET Power MOSFET
File Size	191.97K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFR3710Z IRFU3710Z
OCR Text	...nt (A) 100 10.00 10 100sec 1.00 T J = 25C 1msec 1 Tc = 25C Tj = 175C Single Pulse 0.1 1 10 10msec VGS = 0V 0.10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VSD, Source-to-Drain Voltage (V) 100 1000 VDS, Drain-to-Sou...
Description	100V Single N-Channel Automotive HEXFET Power MOSFET in a I-Pak package AUTOMOTIVE MOSFET Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resi
File Size	210.55K / 11 Page	View it Online	Download Datasheet

For 100sec Found Datasheets File :: 1521 Search Time::1.937ms
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