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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT24M120B2
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| OCR Text |
... Leakage Current
3
0.68 5 100 500 100
VGS = 30V
Dynamic Characteristics
Symbol
gfs Ciss Crss Coss Co(cr) Co(er) Qg Qgs Qgd td(...1200 600 400 200 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage 0... |
| Description |
N-Channel MOSFET
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| File Size |
393.63K /
4 Page |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT28M120L APT28M120B2
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| OCR Text |
... Leakage Current
3
0.56 5 100 500 100
VGS = 30V
Dynamic Characteristics
Symbol
gfs Ciss Crss Coss Co(cr) Co(er) Qg Qgs Qgd td(...1200 600 400 200 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage 0... |
| Description |
N-Channel MOSFET
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| File Size |
269.43K /
4 Page |
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it Online |
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POSEICO SPA
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| Part No. |
AT804S16
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| OCR Text |
...e power dissipation pulse width 100 s 150 w p g average gate power dissipation 2 w mounting r th(j-h) thermal impedance, dc junction to ...1200 1400 1600 1800 2000 0 200 400 600 800 1000 1200 1400 i f(av) [a] p f(av) [w] ansaldo dc 180... |
| Description |
ER 3C 3#8 SKT RECP 相位控制晶闸 ER 4C 3#12 1#4 PIN RECP 相位控制晶闸 PHASE CONTROL THYRISTOR
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| File Size |
43.89K /
4 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT2X101D20J_05 APT2X100D20J APT2X101D20J APT2X101D20J05
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| OCR Text |
...and StorageTemperature Range
100 171 1000 -55 to 150
C Amps
STATIC ELECTRICAL CHARACTERISTICS
Symbol IF = 100A VF Forward Voltage IF...1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 3. Reverse Recovery Time vs. Current Rate of Chang... |
| Description |
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
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| File Size |
63.94K /
4 Page |
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it Online |
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Price and Availability
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