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10.2w Datasheet PDF File

For 10.2w Found Datasheets File :: 29310 Search Time::1.156ms
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				Powerex, Inc. Powerex Power Semiconductors Mitsubishi Electric Corporation
Part No.	FS10SM-9
OCR Text	...0 200 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) CASE TEMPERATURE TC (C) O...W) DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (25C) DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (tC...
Description	Nch POWER MOSFET HIGH-SPEED SWITCHING USE 10 A, 450 V, 0.73 ohm, N-CHANNEL, Si, POWER, MOSFET MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
File Size	48.59K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation Powerex Power Semiconductors
Part No.	FS16SM-10
OCR Text	...0-1 7 5 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) VGS =20V 10V 6V PD = 150W TC =...W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (T...
Description	MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
File Size	48.66K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation Powerex Power Semiconductors
Part No.	FS16SM-5
OCR Text	... MAXIMUM SAFE OPERATING AREA 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10-1 tw=10s 100s 1ms 10ms TC = 25C Single Pulse DC 160 120 8...W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (T...
Description	Power MOSFETs: FS Series, Medium Voltage, 250V Nch POWER MOSFET HIGH-SPEED SWITCHING USE
File Size	49.10K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation Powerex Power Semiconductors
Part No.	FS16SM-6
OCR Text	... MAXIMUM SAFE OPERATING AREA 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10-1 tw=10s 100s 1ms 10ms TC = 25C Single Pulse DC 160 120 8...W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (T...
Description	MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
File Size	48.70K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation Powerex Power Semiconductors
Part No.	FS16SM-9
OCR Text	...0-1 7 5 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) VGS =20V 10V 6V PD = 150W TC =...W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (T...
Description	MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
File Size	48.76K / 4 Page	View it Online	Download Datasheet

				POWEREX[Powerex Power Semiconductors]
Part No.	MG200J6ES61 MG200F6ES61
OCR Text	...S. GATE RESISTANCE (TYPICAL) 102 SWITCHING LOSS, E(off), (mJ/PULSE) SWITCHING LOSS, E(on), (mJ/PULSE) 102 SWITCHING LOSS, E(off), (m...W 0 500 1000 1500 2000 2500 0 500 1000 1500 2000 2500 10-2 10...
Description	Six IGBTMOD⑩ Compact IGBT Series Module 200 Amperes/600 Volts
File Size	176.49K / 4 Page	View it Online	Download Datasheet

				NXP Semiconductors Philips Semiconductors
Part No.	PH2925U
OCR Text	...base temperature. 103 ID (A) 102 003aaa438 Limit RDSon = VDS / ID tp = 10 s 100 s 1 ms 10 ms 10 DC 100 ms 1 10-1 10-1 ...W thermal resistance from junction to mounting base Figure 4 Symbol Parameter 5.1 Transient therm...
Description	N-channel TrenchMOS?/a> ultra low level FET N-channel TrenchMOS⑩ ultra low level FET N-channel TrenchMOS ultra low level FET
File Size	83.28K / 12 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	PHB101NQ04T PHP101NQ04T
OCR Text	...mit RDSon = VDS / ID tp = 10 s 102 100 s 03aq92 DC 10 1 ms 10 ms 100 ms 1 1 10 VDS (V) 102 Tmb = 25 C; IDM is single pul...W K/W K/W thermal resistance from junction to mounting base Figure 4 thermal resistance from junctio...
Description	N-channel Trenchmos (tm) standard level FET N-channel TrenchMOS standard level FET 75 A, 40 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET N-channel TrenchMOS standard level FET From old datasheet system
File Size	84.77K / 13 Page	View it Online	Download Datasheet

				NXP Semiconductors Philips Semiconductors
Part No.	MPSH10
OCR Text	...00 20 -50 200 100 0 102 f (MHz) 103 -60 0 20 40 60 80 100 g11 (mS) VCB = 10 V; IC = 4 mA. Fig.2 Common base input admittance (Y11) as a function of frequency. VCB = 10 V; IC = 4 mA. Fig.3 C...
Description	NPN 1 GHz general purpose switching transistor
File Size	77.26K / 8 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
Part No.	PHU78NQ03LT PHP78NQ03LT
OCR Text	...ng base temperature 103 ID (A) 102 Fig 2. Normalized continuous drain current as a function of mounting base temperature 003aaa175 L...W K/W thermal resistance from junction to mounting base Figure 4 thermal resistance from junction to...
Description	N-channel TrenchMOS logic level FET N-channel TrenchMOSTM logic level FET 75 A, 25 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
File Size	76.05K / 12 Page	View it Online	Download Datasheet

For 10.2w Found Datasheets File :: 29310 Search Time::1.156ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |