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  1.8mh Datasheet PDF File

For 1.8mh Found Datasheets File :: 473    Search Time::1.265ms    
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    SI3443DVPBF SI3443DVTRPBF

InterFET Corporation
International Rectifier
Part No. SI3443DVPBF SI3443DVTRPBF
OCR Text ...l -2.5V Rated Lead-Free D 1 6 A D VDSS = -20V D 2 5 D G 3 4 S RDS(on) = 0.065 Top View Description ...8mH RG = 25, IAS = -3.0A. Pulse width 300s; duty cycle 2%. 2 www.irf.com Si3443DVPbF...
Description Ultra Low On-Resistance
HEXFETPower MOSFET
HEXFET Power MOSFET

File Size 106.04K  /  7 Page

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    AP09N70P-A

Advanced Power Electronics Corp.
Part No. AP09N70P-A
OCR Text ... GS @ 10V Pulsed Drain Current 1 Rating 650 30 9 5 40 156 1.25 2 Units V V A A A W W/ mJ A mJ Total Power Dissipation Linear De...8mH , RG=25 , IAS=9A. Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=V...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 58.99K  /  4 Page

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    AP09N70P AP09N70R

Advanced Power Electronics Corp.
Part No. AP09N70P AP09N70R
OCR Text ...VGS @ 10V Pulsed Drain Current 1 Rating - /A 600/675 30 9 5 40 156 1.25 2 Total Power Dissipation Linear Derating Factor Single Pul...8mH , RG=25 , IAS=9A. 3.Pulse width <300us , duty cycle <2%. Parameter Continuous Source Current ( ...
Description N-CHANNEL ENHANCEMENT MODE

File Size 84.61K  /  6 Page

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    AP09N90CW

Advanced Power Electronics Corp.
Part No. AP09N90CW
OCR Text ... D BVDSS RDS(ON) ID 900V 1.4 7.6A G S Description AP09N90C provides minimize on-state resistance , superior switching performa...8mH , RG=25 , IAS=6A. 3.Pulse width <300us , duty cycle <2%. Parameter Forward On Voltage 3 Test...
Description N-CHANNEL ENHANCEMENT MODE

File Size 72.16K  /  4 Page

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    AP09N90W

Advanced Power Electronics Corp.
Part No. AP09N90W
OCR Text ... D BVDSS RDS(ON) ID 900V 1.2 8.6A G S Description AP09N90 series are specially designed as main switching devices for universa...8mH , RG=25 , IAS=5.2A. 3.Pulse width <300us , duty cycle <2%. Parameter Continuous Source Current ...
Description N-CHANNEL ENHANCEMENT MODE

File Size 71.29K  /  4 Page

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    FM4933

Formosa MS
Part No. FM4933
OCR Text ... 0.165(4.2) 0.150(3.8) 0.067(1.7) 0.060(1.5) 0.040(1.0) Typ. 0.040 (1.0) Typ. Mechanical data Case : Molded plastic, JEDE DO-21...8mH FIG.5-TYPICAL JUNCTION CAPACITANCE 35 30 25 20 15 10 5 R2- TEN 1W 10W 1% CARBON CORE IN P...
Description Chip Silicon Rectifier - Fast recovery type

File Size 39.82K  /  2 Page

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    STK0760F

AUK corp
Part No. STK0760F
OCR Text ...28nC(Typ.) Low RDS(on) :RDS(on)=1.2(Max.) Type NO. STK0760F Marking STK0760 Package Code TO-220F-3L Ordering Information Outline Dime...8mH, IAS=7A, VDD=50V, RG=27 Pulse Test : Pulse Width 300us, Duty cycle 2% Essentially independent ...
Description Advanced Power MOSFET

File Size 469.72K  /  8 Page

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    FQB7N65C FQB7N65CTM

Fairchild Semiconductor
Part No. FQB7N65C FQB7N65CTM
OCR Text 1.4 @VGS = 10 V Low gate charge ( typical 28 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capability ...8mH, IAS = 7A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 7A, di/dt 200A/s, VDD BVDSS, Starting...
Description 650V N-Channel MOSFET

File Size 717.54K  /  8 Page

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    FDPF14N30 FDP14N30

Fairchild Semiconductor
Part No. FDPF14N30 FDP14N30
OCR Text ...erate above 25C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed (Note 1) FD...8mH, IAS = 14A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 14A, di/dt 200A/s, VDD BVDSS, Starti...
Description 300V N-Channel MOSFET

File Size 298.40K  /  10 Page

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