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  1.1mh Datasheet PDF File

For 1.1mh Found Datasheets File :: 3813    Search Time::2.187ms    
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    IRF[International Rectifier]
Part No. IRGI4061DPBF
OCR Text ... n-channel C VCE(on) typ. = 1.35V Benefits * High Efficiency in a Wide Range of Applications * Suitable for a Wide Range of Switch...1mH, LS= 150nH, TJ = 25C Energy losses include tail and diode reverse recovery IC = 11A, VCC = 4...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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    IRF[International Rectifier]
Part No. IRGB4064DPBF
OCR Text ... n-channel C VCE(on) typ. = 1.6V Benefits * High Efficiency in a Wide Range of Applications * Suitable for a Wide Range of Switchi...1mH; VCE = 400V, RG = 22; VGE = 15V. 350 300 250 200 150 100 50 0 0 25 50 75 100 125 Fig. 14 - T...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

File Size 367.91K  /  10 Page

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    IRF[International Rectifier]
Part No. IRGB4059DPBF
OCR Text ... n-channel C VCE(on) typ. = 1.75V Benefits * High Efficiency in a Wide Range of Applications * Suitable for a Wide Range of Switch...1mH, LS= 150nH, TJ = 25C Energy losses include tail and diode reverse recovery CT4 IC = 4A, VCC...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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    IRF[International Rectifier]
Part No. IRGB4045DPBF
OCR Text ... n-channel C VCE(on) typ. = 1.7V Benefits * High Efficiency in a Wide Range of Applications * Suitable for a Wide Range of Switchi...1mH, LS= 150nH, TJ = 25C Energy losses include tail and diode reverse recovery CT4 IC = 6.0A, V...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

File Size 778.63K  /  10 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. HGTP7N60C3 HGTD7N60C3S HGTD7N60C3S9A
OCR Text ...480V 60 0.48 100 -40 to 150 260 1 8 UNITS V A A A V V W W/oC mJ oC oC s s Collector to Emitter Voltage . . . . . . . . . . . . . . . . . ...1mH Gate to Emitter Threshold Voltage VGE(TH) IGES SSOA Gate to Emitter Leakage Current Swi...
Description 14A,600V, UFS Series N-Channel IGBTs
14A, 600V, UFS Series N-Channel IGBTs

File Size 164.50K  /  8 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. HGTP7N60C3D_05 HGT1S7N60C3D HGT1S7N60C3DS HGTP7N60C3D HGTP7N60C3D05
OCR Text ...N60C3DS, HGT1S7N60C3D Rev. B 1 www.fairchildsemi.com HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT ...1mH 150oC, VCE(PK) = 480V VCE(PK) = 600V 3.0 40 60 5.0 8 6.0 V A A V SSOA VGEP Switching SOA G...
Description 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

File Size 486.92K  /  9 Page

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    IRGS14C40L IRGB14C40L IRGSL14C40L

IRF[International Rectifier]
Part No. IRGS14C40L IRGB14C40L IRGSL14C40L
OCR Text ...gs Parameter Max Clamped 20 14 1 10 Clamped 125 54 - 40 to 175 - 40 to 175 6 11.5 Unit V A A mA IGBT with on-chip Gate-Emitter and Gate-...1mH, VCE=14V VGE=5V, RG=1K ohm, L=1mH, VCE=14V VGE=5V, RG=1K ohm, L=1mH, VCE=300V VGE=0V, VCE=25V, f...
Description 430V Low-Vceon Discrete IGBT in a TO-262 package
430V Low-Vceon Discrete IGBT in a D2-Pak package
430V Low-Vceon Discrete IGBT in a TO-220AB package
IGBT with on-chip Gate-Emitter and Gate-Collector clamps
INSULATED GATE BIPOLAR TRANSISTOR

File Size 154.13K  /  11 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. HGTP7N60A4 HGT1S7N60A4S9A HGT1S7N60A4S9A_04 HGTG7N60A4 HGT1S7N60A4S9A04
OCR Text ... Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to...1mH Test Circuit (Figure 20) (c)2004 Fairchild Semiconductor Corporation HGT1S7N60A4S9A, HGTG7...
Description 600V, SMPS Series N-Channel IGBT
600V,SMPS Series N-Channel IGBT

File Size 146.26K  /  8 Page

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    Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. HGTP3N60C3 HGTD3N60C3S HGTD3N60C3S9A
OCR Text ... Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter...1mH IC = IC110, VCE = 0.5 BVCES TJ = 150oC ICE = IC110 VCE(PK) = 0.8 BVCES VGE = 15V RG = 82 L = 1mH...
Description 6A, 600V, UFS Series N-Channel IGBTs 6 A, 600 V, N-CHANNEL IGBT, TO-252AA

File Size 263.56K  /  7 Page

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    HGTP3N60C3D HGT1S3N60C3D HGT1S3N60C3DS

Fairchild Semiconductor
HARRIS[Harris Corporation]
Harris Semiconductor
Part No. HGTP3N60C3D HGT1S3N60C3D HGT1S3N60C3DS
OCR Text ... Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate-Emitter Voltage ...1mH VCE(PK) = 480V VCE(PK) = 600V TC = 25oC TC = 150oC TC = 25oC TC = 150oC TC = 25oC MIN 600 3.0 TY...
Description 6A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
3.3V 72-mc CPLD
6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

File Size 327.01K  /  7 Page

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For 1.1mh Found Datasheets File :: 3813    Search Time::2.187ms    
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