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IRF[International Rectifier]
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| Part No. |
IRGI4061DPBF
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| OCR Text |
...
n-channel
C
VCE(on) typ. = 1.35V
Benefits
* High Efficiency in a Wide Range of Applications * Suitable for a Wide Range of Switch...1mH, LS= 150nH, TJ = 25C
Energy losses include tail and diode reverse recovery
IC = 11A, VCC = 4... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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| File Size |
285.15K /
10 Page |
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IRF[International Rectifier]
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| Part No. |
IRGB4064DPBF
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| OCR Text |
...
n-channel
C
VCE(on) typ. = 1.6V
Benefits
* High Efficiency in a Wide Range of Applications * Suitable for a Wide Range of Switchi...1mH; VCE = 400V, RG = 22; VGE = 15V.
350 300 250 200 150 100 50 0 0 25 50 75 100 125
Fig. 14 - T... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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| File Size |
367.91K /
10 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRGB4059DPBF
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| OCR Text |
...
n-channel
C
VCE(on) typ. = 1.75V
Benefits
* High Efficiency in a Wide Range of Applications * Suitable for a Wide Range of Switch...1mH, LS= 150nH, TJ = 25C
Energy losses include tail and diode reverse recovery
CT4
IC = 4A, VCC... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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| File Size |
283.45K /
10 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRGB4045DPBF
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| OCR Text |
...
n-channel
C
VCE(on) typ. = 1.7V
Benefits
* High Efficiency in a Wide Range of Applications * Suitable for a Wide Range of Switchi...1mH, LS= 150nH, TJ = 25C
Energy losses include tail and diode reverse recovery
CT4
IC = 6.0A, V... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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| File Size |
778.63K /
10 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
HGTP7N60C3 HGTD7N60C3S HGTD7N60C3S9A
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| OCR Text |
...480V 60 0.48 100 -40 to 150 260 1 8 UNITS V A A A V V W W/oC mJ oC oC s s
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . ...1mH
Gate to Emitter Threshold Voltage
VGE(TH) IGES SSOA
Gate to Emitter Leakage Current Swi... |
| Description |
14A,600V, UFS Series N-Channel IGBTs 14A, 600V, UFS Series N-Channel IGBTs
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| File Size |
164.50K /
8 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
HGTP7N60C3D_05 HGT1S7N60C3D HGT1S7N60C3DS HGTP7N60C3D HGTP7N60C3D05
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| OCR Text |
...N60C3DS, HGT1S7N60C3D Rev. B
1
www.fairchildsemi.com
HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT ...1mH 150oC, VCE(PK) = 480V VCE(PK) = 600V 3.0 40 60 5.0 8 6.0 V A A V
SSOA VGEP
Switching SOA G... |
| Description |
14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
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| File Size |
486.92K /
9 Page |
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Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
HGTP3N60C3 HGTD3N60C3S HGTD3N60C3S9A
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| OCR Text |
... Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter...1mH IC = IC110, VCE = 0.5 BVCES TJ = 150oC ICE = IC110 VCE(PK) = 0.8 BVCES VGE = 15V RG = 82 L = 1mH... |
| Description |
6A, 600V, UFS Series N-Channel IGBTs 6 A, 600 V, N-CHANNEL IGBT, TO-252AA
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| File Size |
263.56K /
7 Page |
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it Online |
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Price and Availability
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