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  000-29 Datasheet PDF File

For 000-29 Found Datasheets File :: 29205    Search Time::1.687ms    
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    2SK1159 2SK1160

Hitachi Semiconductor
Part No. 2SK1159 2SK1160
OCR Text ...2SK1160 2SK1159 10 100 300 1,000 3 30 Drain to Source Voltage VDS (V) 20 Typical Output Characteristics 20 10 V 6V 5.5 V Pulse Test...29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenh...
Description Silicon N-Channel MOS FET

File Size 48.23K  /  9 Page

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    2SK1161 2SK1162

Hitachi Semiconductor
Part No. 2SK1161 2SK1162
OCR Text ...(C) 150 3 10 30 100 300 1,000 Drain to Source Voltage VDS (V) Normalized Transient Thermal Impedance S (t) Normalized Transient ...29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenh...
Description Silicon N Channel MOS FET
Silicon N-Channel MOS FET

File Size 33.64K  /  6 Page

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    2SK1163 2SK1164 2SK1161 2SK1162

HITACHI[Hitachi Semiconductor]
Part No. 2SK1163 2SK1164 2SK1161 2SK1162
OCR Text ...64 2SK1163 1 10 100 300 1,000 3 30 Drain to Source Voltage VDS (V) Normalized Transient Thermal Impedance S (t) Normalized Trans...29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenh...
Description Silicon N-Channel MOS FET

File Size 33.64K  /  6 Page

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    2SK1165 2SK1166

HITACHI[Hitachi Semiconductor]
Part No. 2SK1165 2SK1166
OCR Text ...66 2SK1165 3 30 10 100 300 1,000 Drain to Source Voltage VDS (V) Typical Output Characteristics 20 20 10 V 6V 16 Drain Current ID (A) ...29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenh...
Description Silicon N-Channel MOS FET

File Size 49.04K  /  9 Page

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    2SK1167 2SK1168 2SK1157 2SK1158 2SK1159 2SK1160

HITACHI[Hitachi Semiconductor]
Part No. 2SK1167 2SK1168 2SK1157 2SK1158 2SK1159 2SK1160
OCR Text ... 150 0.1 1 3 10 30 100 300 1,000 Drain to Source Voltage VDS (V) Typical Output Characteristics 20 20 10 V 6V Drain Current ID (A) Pul...29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenh...
Description Silicon N-Channel MOS FET

File Size 48.23K  /  9 Page

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    2SK1169 2SK1170

HITACHI[Hitachi Semiconductor]
Part No. 2SK1169 2SK1170
OCR Text ...70 2SK1169 3 10 30 100 300 1,000 Drain to Source Voltage VDS (V) Typical Output Characteristics 50 20 10 V 7V 6V 16 Pulse Test Drain C...29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenh...
Description Silicon N-Channel MOS FET

File Size 48.20K  /  9 Page

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    2SK435 2SK435E

Hitachi Semiconductor
Part No. 2SK435 2SK435E
OCR Text ... yfs (mS) VDS = 5 V f = 1 kHz 1,000 VDS = 0 100 Gate Cutoff Current vs. Gate to Source Voltage 40 30 10 20 10 1.0 0 -1....29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenh...
Description Silicon N Channel MOS FET
Silicon N-Channel Junction FET
TRANSISTOR | JFET | N-CHANNEL | 22V V(BR)DSS | 40MA I(DSS) | TO-92

File Size 30.42K  /  7 Page

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    2SK522

Hitachi Semiconductor
Part No. 2SK522
OCR Text ... D.U.T. L1 C2 3.0 L2 4,700 50 1,000 V.V VDD Unit R : C : pF C1, C2 : 0 to 30pF Max Variable Air L1 : 3.5 T 1 mm Copper Ribbon, Tin...29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenh...
Description Silicon N-Channel Junction FET

File Size 35.94K  /  8 Page

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    2SK740

HITACHI[Hitachi Semiconductor]
Part No. 2SK740
OCR Text ...rature TC (C) 150 1 10 100 1,000 Drain to Source Voltage VDS (V) Typical Output Characteristics 20 15V 10 V 8V 16 Drain Current ID (A)...29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenh...
Description Silicon N-Channel MOS FET

File Size 46.51K  /  8 Page

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    74HCT423 74HCT423D 74HCT423N 74HC423 74HC423D 74HC423N 74HC423PW 74HC423DB 74HCT423DB 74HCT423PW

PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
Part No. 74HCT423 74HCT423D 74HCT423N 74HC423 74HC423D 74HC423N 74HC423PW 74HC423DB 74HCT423DB 74HCT423PW
OCR Text ...or pulse widths, when CEXT < 10 000 pF, see Fig.9. When CEXT > 10 000 pF, the typical output pulse width is defined as: tW = 0.45 x REXT x C...29 23 tPHL/ tPLH propagation delay nRD to nQ, nQ output transition time 66 24 19 tTHL/ tTLH 19 7 6 t...
Description Dual retriggerable monostable multivibrator with reset 双retriggerable单稳态触发器的复

File Size 103.63K  /  14 Page

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