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  0.50v Datasheet PDF File

For 0.50v Found Datasheets File :: 28713    Search Time::2.641ms    
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    AOB412L

Alpha & Omega Semiconductors
Part No. AOB412L
OCR Text ...aximum junction-to-ambient a d 0.7 48 1 units maximum junction-to-ambient a t c =100c w power dissipation a p dsm w t a =70c 150 1.7 t a ...50v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static...
Description 100V N-Channel MOSFET

File Size 310.25K  /  7 Page

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    TLP558

Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
Part No. TLP558
OCR Text ...e No. E67349 TOSHIBA Weight: 0.54 g 11-10C4 Pin Configuration(top view) 1 2 3 4 GND Shield VCC 8 1 : NC 2 : Anode 7 3 : Cathode 4 ...50V VO(Max.)=0.8V -1000 V / s VE=3 0V VE=3 0V IF=0mA, VCM=50V VO(Min.)=2V ns ns 1 Test Circu...
Description Isolated Bus Driver High Speed Line Receiver Microprocessor System Interfaces MOS FET Gate Driver Transistor Inverter 隔离总线驱动高速线接收微处理器系统接口场效应晶体管栅极驱动晶体管逆变
Photocoupler GaAlAs Ired & Photo .IC

File Size 208.91K  /  7 Page

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    AOB410L

Alpha & Omega Semiconductors
Part No. AOB410L
OCR Text ...aximum junction-to-ambient a d 0.35 65 0.45 units maximum junction-to-ambient a t c =100c w power dissipation a p dsm w t a =70c 333 1.2 ...50v, f=1mhz switching parameters diode forward voltage electrical characteristics (t j =25c unless o...
Description 100V N-Channel MOSFET

File Size 316.58K  /  7 Page

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    ZETEX[Zetex Semiconductors]
Part No. ZXMN10A11KTC ZXMN10A11K
OCR Text 0.350 @ VGS= 10V 0.450 @ VGS= 6V ID (A) 3.5 3.1 Description This new generation trench MOSFET from Zetex features a unique structure com...50V, VGS=0V f=1MHz Symbol Min. Typ. Max. Unit Conditions Gate-source threshold voltage VGS(th) St...
Description 100V DPAK N-channel enhancement mode MOSFET

File Size 726.18K  /  8 Page

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    PFM18030SM PFM18030 PFM18030F

List of Unclassifed Manufacturers
ETC[ETC]
Part No. PFM18030SM PFM18030 PFM18030F
OCR Text ...4 40 60 Limits Typ 29.5 0.8 0.1 0.8 3.1 49 20 27 0.033 1.9 73 235 Units Max 1880 32 1.5 0.3 1.2 3.7 30 +115 30 2.1 MHz dB...50V,X7R,10% SuggestMurataGRM426X7R154K050ALorequivalent. RES,potentiometer,10Kohms,DigikeySM4W103ND ...
Description 1805-1880 MHz, 30W, 2-Stage Power Module Enhancement-Mode Lateral MOSFETs

File Size 485.90K  /  13 Page

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    Sharp Electrionic Component...
SHARP[Sharp Electrionic Components]
Part No. PC912X
OCR Text ...er s Outline Dimensions 2.54 0.25 8 7 PC912 6 0.8 0.2 5 6.5 0.5 ( Unit : mm ) Internal connection diagram 8 7 6 5 Amp. 1 1.2 ...50V, IF = 0mA VO( Min ) = 2V, *8 Ta = 25C, VCC = 5V V CM = 50V, IF = 5mA VO( Max ) = 0.8V, *8 Ta = 2...
Description Ultra-high Speed Response OPIC Photocoupler

File Size 61.34K  /  5 Page

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    AON6482

Alpha & Omega Semiconductors
Alpha & Omega Semicondu...
Part No. AON6482
OCR Text ...5c t c =100c avalanche energy l=0.1mh c mj avalanche current c 4.4 continuous drain current 61 5.5 a 35 the aon6482 combines advanced tren...50v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static...
Description 100V N-Channel MOSFET

File Size 242.13K  /  6 Page

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    ZETEX[Zetex Semiconductors]
Part No. ZXMN10A25GTA ZXMN10A25G
OCR Text 0.125 @ VGS= 10V 0.150 @ VGS= 6V ID (A) 4 3.7 Description This new generation trench MOSFET from Zetex features a unique structure which...50V, VGS= 5V ID= 2.9A VDS= 50V, VGS= 10V ID= 2.9A VDD= 50V, ID= 1A RG6.0 , VGS= 10V Ciss Coss Crss 8...
Description 100V SOT223 N-channel enhancement mode MOSFET

File Size 568.51K  /  8 Page

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    ZETEX[Zetex Semiconductors]
Part No. ZXMN10A25KTC
OCR Text 0.125 @ VGS= 10V 0.150 @ VGS= 6V ID (A) 6.4 5.8 Description This new generation trench MOSFET from Zetex features a unique structure com...50V, VGS= 5V ID= 2.9A VDS= 50V, VGS= 10V ID= 2.9A VDD= 50V, ID= 1A RG6.0 , VGS= 10V Ciss Coss Crss 8...
Description 100V DPAK N-channel enhancement mode MOSFET

File Size 533.10K  /  8 Page

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    ZETEX[Zetex Semiconductors]
Part No. ZXMN10B08E6TC ZXMN10B08E6 ZXMN10B08E6TA
OCR Text 0.230 DESCRIPTION ID = 1.9A This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of...50V,V GS =10V, I D =1.6A V DS =50V,V GS =5V, I D =1.6A V DD =50V, I D =1.0A R G 6.0 , V GS =10V 0...
Description N-channel MOSFET
100V N-CHANNEL ENHANCEMENT MODE MOSFET

File Size 251.59K  /  7 Page

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