-600v pdf Datasheet P12 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : UTX125 2N4272 UN2111 M2816 BR408 SGM2306A SMMS650A GR40N60
	Product Description
	Full Text Search

-600v Datasheet PDF File

For -600v Found Datasheets File :: 16341 Search Time::2.125ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |

				Mitsubishi Electric Semiconductor
Part No.	CM200DU-24F09
OCR Text	... = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 200A, VGE = 15V VCC = 600V, IC = 200A VGE = 15V RG = 1.6, Inductive load IE = 200A IE = 200A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound applied*2 (1...
Description	IGBT MODULES HIGH POWER SWITCHING USE
File Size	124.22K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	CM150DY-24NF09
OCR Text	... = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 150A, VGE = 15V VCC = 600V, IC = 150A VGE = 15V RG = 2.1, Inductive load IE = 150A IE = 150A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound Applied*2 (1...
Description	IGBT MODULES HIGH POWER SWITCHING USE
File Size	86.99K / 4 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRPLDIM4E
OCR Text	...mp exchange auto-restart, and a 600V half-bridge driver into a standard SO8 or DIP8 package. The IRS2530D includes adaptive zero-voltage switching, non-zero voltage switching (ZVS) protection, as well as an integrated 600V bootstrap MOSFET....
Description	Miniature Dimmable 26W Ballast Using IRS2530D DIM8TM Control IC
File Size	644.72K / 17 Page	View it Online	Download Datasheet

				Harris, Corp. Fairchild Semiconductor HARRIS[Harris Corporation]
Part No.	HGTG12N60C3D
OCR Text	600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Package JEDEC STYLE TO-247 E C G January 1997 Features * * * * * 24A, 600V at TC = 25 C Typical Fall Time . . . . . . . . . . . . . . 210ns at TJ = 150oC Short Cir...
Description	36 MACROCELL 3.3 VOLT ISP CPLD 4A00V的，的ufs系列N沟道IGBT的与反平Hyperfast二极 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
File Size	102.34K / 7 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	CM100TL-24NF
OCR Text	... = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 100A, VGE = 15V VCC = 600V, IC = 100A VGE1 = VGE2 = 15V RG = 3.1, Inductive load switching operation IE = 100A IE = 100A, VGE = 0V IGBT part (1/6 module)1 FWDi part (1/6 module)1 Case to fin, The...
Description	HIGH POWER SWITCHING USE
File Size	49.67K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	CM100TL-24NF09
OCR Text	... = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 100A, VGE = 15V VCC = 600V, IC = 100A VGE = 15V RG = 3.1, Inductive load IE = 100A IE = 100A, VGE = 0V IGBT part (1/6 module)1 FWDi part (1/6 module)1 Case to heat sink, Thermal compound Applied ...
Description	IGBT MODULES HIGH POWER SWITCHING USE
File Size	97.29K / 5 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IDC05S60CE
OCR Text	... die size package idc05s60ce 600v 5a 1.45 x 1.162 mm 2 sawn on foil mechanical parameter raster size 1.45x 1.162 anode pad size 1.213 x 0.925 area total 1.68 mm 2 thickness 355 m wafer size 100 mm max. possible ...
Description	2nd generation thinQ!TM SiC Schottky Diode
File Size	102.30K / 4 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IDC08S60CE
OCR Text	... die size package idc08s60ce 600v 8a 1.658 x 1.52 mm 2 sawn on foil mechanical parameter raster size 1.658x 1.52 anode pad size 1.421 x 1.283 area total 2.52 mm 2 thickness 355 m wafer size 100 mm max. possible chi...
Description	2nd generation thinQ!TM SiC Schottky Diode
File Size	101.50K / 4 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	PM400DAS060 PM400HSA12 PM800HSA06 PM75RVA060 PM400DVA060 PM100CVA120
OCR Text	...s with ratings ranging from 10A 600V to 800A 1200V. The power semiconductors used in these modules are based on the field proven H-Series IGBT and diode processes. In Table 6.1 the third generation family has been divided into two groups, t...
Description	USING INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE
File Size	922.36K / 31 Page	View it Online	Download Datasheet

				POWEREX[Powerex Power Semiconductors]
Part No.	PP225D060
OCR Text	600V TM Half Bridge IGBT Assembly Description: The Powerex POW-R-PAK is a configurable IGBT based power assembly that may be used as a converter, chopper, half or full bridge, or three phase inverter for motor control, power supply, ...
Description	POW-R-PAK 200A / 1200V 3 phase IGBT Assembly
File Size	360.12K / 6 Page	View it Online	Download Datasheet

For -600v Found Datasheets File :: 16341 Search Time::2.125ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |