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  -140v Datasheet PDF File

For -140v Found Datasheets File :: 1324    Search Time::1.39ms    
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    2STA1695

STMicroelectronics
Part No. 2STA1695
OCR Text ... High breakdown voltage VCEO = -140v Complementary to 2STC4468 Typical ft =20MHz Fully characterized at 125 oC 3 2 1 Applications Audio power amplifier TO-3P Description The device is a PNP transistor manufactured using new BiT...
Description High power PNP epitaxial planar bipolar transistor

File Size 197.16K  /  9 Page

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    2N6302

Savantic, Inc.
Part No. 2N6302
OCR Text ...ollector cut-off current v ce =140v; v be =-1.5v t c =150 1.0 5.0 ma i cbo collector cut-off current v cb =140v; i e =0 1.0 ma i ceo collector cut-off current v ce =70v; i b =0 2.0 ma i ebo emitter cut-off current ...
Description Silicon NPN Power Transistors

File Size 107.10K  /  3 Page

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    2SD2065

Inchange Semiconductor Company Limited
Part No. 2SD2065
OCR Text ...er Breakdown Voltage: V(BR)CEO= 140V(Min) *Good Linearity of hFE *Wide Area of Safe Operation *Complement to Type 2SB1372 APPLICATIONS *Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE ...
Description Silicon NPN Power Transistor

File Size 212.17K  /  2 Page

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    2SD2140

Inchange Semiconductor Company Limited
Part No. 2SD2140
OCR Text ...er Breakdown Voltage: V(BR)CEO= 140V(Min) *Wide Area of Safe Operation *Complement to Type 2SB1421 APPLICATIONS *Designed for high power amplifications. *Optimum for the output stage of a HiFi audio amplifier ABSOLUTE MAXIMUM RATINGS(...
Description Silicon NPN Power Transistor

File Size 210.32K  /  2 Page

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    FMMT555

ZETEX[Zetex Semiconductors]
Part No. FMMT555
OCR Text ...=-100A IC=-10mA* IE=-100A VCB =-140v VCB =-140v, Tamb=100C VEB=-4V IC=-100mA, IB=-10mA* IC=-100mA, IB=-10mA* IC=-100mA, VCE =-10V* IC=-10mA, VCE =-10V* IC=-300mA, VCE =-10V* IC=-50mA, VCE =-10V f=100MHz VCB =-10V, f=1MHz V V V * Measu...
Description PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

File Size 129.57K  /  2 Page

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    2SD557

Inchange Semiconductor Company Limited
Part No. 2SD557
OCR Text ...er Breakdown Voltage: V(BR)CEO= 140V(Min.) *High Collector Power Dissipation APPLICATIONS *Designed for high power audio amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VC...
Description Silicon NPN Power Transistor

File Size 174.74K  /  2 Page

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    2SB1556

Inchange Semiconductor Company Limited
Part No. 2SB1556
OCR Text ...r Breakdown Voltage: V(BR)CEO= -140v(Min) *High DC Current Gain: hFE= 5000(Min)@IC= -7A *Complement to Type 2SD2385 APPLICATIONS *Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNI...
Description Silicon PNP Darlington Power Transistor

File Size 208.96K  /  2 Page

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    LT1810 LT1806 LT1807

Linear Technology
Part No. LT1810 LT1806 LT1807
OCR Text ...25MHz gain-bandwidth product, a 140V/s slew rate and a 85mA output current. They are optimized for low voltage, high performance signal conditioning systems. The LT1806/LT1807 have a very low distortion of - 80dBc at 5MHz, a low input refer...
Description 325MHz, Single/Dual, Rail-to-Rail Input and Output, Low Distortion, Low Noise Precision Op Amps
Dual 325MHz, Rail-to-Rail Input and Output, Low DistortionPrecision Op Amp

File Size 286.11K  /  24 Page

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    ON Semi
Part No. MC33441 ON1049
OCR Text ... TIME VEL Typical Vpp = 140V (160V max) TIME MOTOROLA ANALOG IC DEVICE DATA 3 MC33441 OPERATING DESCRIPTION General The MC33441 is a DC-AC inverter integrated circuit for driving EL lamps. It can boost the supply volta...
Description ELECTROLUMINESCENT LAMP DRIVER IC
From old datasheet system

File Size 133.61K  /  12 Page

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    2SB1555

Inchange Semiconductor Company Limited
Part No. 2SB1555
OCR Text ...r Breakdown Voltage: V(BR)CEO= -140v(Min) *High DC Current Gain: hFE= 5000(Min)@IC= -6A *Complement to Type 2SD2384 APPLICATIONS *Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNI...
Description Silicon PNP Darlington Power Transistor

File Size 208.96K  /  2 Page

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