vceo-400v pdf Datasheet P11 Description --- IC-ON-LINE


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vceo-400v Datasheet PDF File

For vceo-400v Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |

				apt ADPOW[Advanced Power Technology]
Part No.	APT4020BN APT4020 APT4025BN
Description	POWER MOS V 400V 26.0A 0.20 Ohm / 400V 23.0A 0.25 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size	50.96K / 4 Page	View it Online	Download Datasheet

				Continental Device India Limited
Part No.	CSB1116 CSB1116A CSB1116G CSB1116L CSB1116Y
Description	0.750W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 1.000A Ic, 135 - 600 hFE 0.750W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 135 - 400 hFE 0.750W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 200 - 400 hFE 0.750W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 300 - 600 hFE 0.750W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 135 - 270 hFE
File Size	154.32K / 3 Page	View it Online	Download Datasheet

				Continental Device India Limited
Part No.	CSB546O CSB546R CSB546Y
Description	25.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 70 - 140 hFE. Complementary CSD401O 25.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 40 - 80 hFE. Complementary CSD401R 25.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 120 - 240 hFE. Complementary CSD401Y 25.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 40 - 240 hFE. Complementary CSD401
File Size	120.72K / 3 Page	View it Online	Download Datasheet

				MOSPEC[Mospec Semiconductor] Mospec Semiconductor, Corp. MOSPEC SEMICONDUCTOR CORP.
Part No.	SF55 SF52 SF56 SF51 SF53 SF54
Description	POWER RECTIFIERS(5.0A, 50-400V) POWER RECTIFIERS(5.0A / 50-400V) POWER RECTIFIERS(5.0A, 50-400V) 大功率整流器.0a中，50 - 400V
File Size	126.76K / 2 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFI360
Description	400V Single N-Channel Hi-Rel MOSFET in a TO-259AA package TRANSISTOR N-CHANNEL(Vdss=400V, Rds(on)=0.20ohm, Id=25A) TRANSISTOR N-CHANNEL(Vdss=400V/ Rds(on)=0.20ohm/ Id=25A)
File Size	209.31K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF350 JANTX2N6768
Description	400V Single N-Channel Hi-Rel MOSFET in a TO-204AE package TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=0.300ohm, Id=14A) TRANSISTORS N-CHANNEL(Vdss=400V/ Rds(on)=0.300ohm/ Id=14A)
File Size	143.69K / 7 Page	View it Online	Download Datasheet

				Continental Device India Limited
Part No.	BD535K BD536J BD534K BD538K BD538J BD534 BD537
Description	50.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 8.000A Ic, 15 hFE. 50.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 8.000A Ic, 20 hFE. ; Package/Case:3-TO-220; Current, It av:16A; Gate Trigger Current Max, Igt:20mA ; Package/Case:3-TO-218X; Current, It av:25A; Gate Trigger Current Max, Igt:80mA Triac; Triac Type:Internally Triggered; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):15A; Gate Trigger Current (QI), Igt:25uA; Package/Case:TO-220; Gate Trigger Current Max, Igt:1.5A ; Package/Case:3-TO-220; Current, It av:6A; Holding Current:50mA Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:10mA; Current, It av:6A; Gate Trigger Current Max, Igt:10mA; Holding Current:15mA RoHS Compliant: Yes
File Size	24.98K / 3 Page	View it Online	Download Datasheet

				Advanced Semiconductor, Inc.
Part No.	ASI10593 HF10-12S
Description	NPN Silicon RF Power Transistor(Ic:4.5 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:4.5 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0 V)) HF BAND, Si, NPN, RF POWER TRANSISTOR
File Size	16.69K / 1 Page	View it Online	Download Datasheet

				Advanced Semiconductor, Inc. ASI[Advanced Semiconductor]
Part No.	ASI10592 HF10-12F
Description	NPN Silicon RF Power Transistor(Ic:4.5 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:4.5 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0 V)) HF BAND, Si, NPN, RF POWER TRANSISTOR
File Size	17.26K / 1 Page	View it Online	Download Datasheet

				SIEMENS AG Infineon
Part No.	BCX54 BCX55 BCX55-16 BCX55-10
Description	NPN Silicon AF Transistors(NPN硅放大器晶体 General Purpose Transistors - SOT89; VCEO=60 V; hFE=40...250 General Purpose Transistors - SOT89; VCEO=45V; hFE 40..250
File Size	97.71K / 5 Page	View it Online	Download Datasheet

For vceo-400v Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |