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  v 500v Datasheet PDF File

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    APT5017BVFR

ADPOW[Advanced Power Technology]
Part No. APT5017BvFR
OCR Text v (R) FREDFET TO-247 Power MOS v(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS v(R) ...
Description POWER MOS v 500v 30A 0.170 Ohm
Power MOS v is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 62.45K  /  4 Page

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    APT5017BVR

ADPOW[Advanced Power Technology]
Part No. APT5017BvR
OCR Text v (R) Power MOS v(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS v(R) also achieves faster ...
Description POWER MOS v 500v 30A 0.170 Ohm
Power MOS v is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 60.07K  /  4 Page

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    APT5017 APT5017SVR

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT5017 APT5017SvR
OCR Text v (R) Power MOS v(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS v(R) also achieves faster ...
Description POWER MOS v 500v 30A 0.170 Ohm
Power MOS v is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 63.55K  /  4 Page

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    APT5018BFLL APT5018SFLL

ADPOW[Advanced Power Technology]
Part No. APT5018BFLL APT5018SFLL
OCR Text ... ns MAX UNIT Amps volts v/ns ns 27 108 1.3 5 250 500 (vGS = 0v, IS = -ID [Cont.]) dv/ dt Tj = 25C Tj = 25C Tj = 125C 1.6 6.0 13 21 Tj = 125C Tj = 25C Tj = 125C C Amps THERMAL CHARACTERISTICS Symbol ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

File Size 53.84K  /  2 Page

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    APT5019HVR

ADPOW[Advanced Power Technology]
Part No. APT5019HvR
OCR Text v (R) TO-258 Power MOS v(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS v(R) also achiev...
Description POWER MOS v 500v 24A 0.190 Ohm
Power MOS v is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 59.96K  /  4 Page

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    APT5020BN APT5022BN

ADPOW[Advanced Power Technology]
Part No. APT5020BN APT5022BN
OCR Text ...<0.5 % DUTY CYCLE NORMALIZED TO v = 10v @ 0.5 I [Cont.] GS D 0 TJ = +25C TJ = +125C 2.00 24 1.50 vGS=10v 1.00 16 8 TJ = +125C TJ = +25C vGS=20v TJ = -55C 0 2 4 6 8 10 vGS, GATE-TO-SOURCE vOLTAGE (vOLTS) FIG...
Description POWER MOS Iv 500v 28.0A 0.20 Ohm / 500v 27.0A 0.22 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH vOLTAGE POWER MOSFETS

File Size 51.03K  /  4 Page

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    APT5020BVFR

ADPOW[Advanced Power Technology]
Part No. APT5020BvFR
OCR Text v (R) FREDFET TO-247 Power MOS v(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS v(R) ...
Description POWER MOS v 500v 26A 0.200 Ohm
Power MOS v is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 61.42K  /  4 Page

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    APT5020BVR

ADPOW[Advanced Power Technology]
Part No. APT5020BvR
OCR Text v (R) Power MOS v(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS v(R) also achieves faster ...
Description POWER MOS v 500v 26A 0.200 Ohm
Power MOS v is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 58.88K  /  4 Page

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    APT5020SVFR APT5020

Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT5020SvFR APT5020
OCR Text v (R) v(R) FREDFET D3PAK Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS v(R) ...
Description 24 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
Power MOS v is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS v 500v 26A 0.200 Ohm

File Size 64.36K  /  4 Page

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    APT5020 APT5020SVR

Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT5020 APT5020SvR
OCR Text v (R) Power MOS v(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS v(R) also achieves faster ...
Description 24 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
Power MOS v is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS v 500v 26A 0.200 Ohm

File Size 61.79K  /  4 Page

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