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MOTOROLA[Motorola, Inc]
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| Part No. |
MAC224A8 MAC224A10 MAC224A4 MAC224A6
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| OCR Text |
...utating di/dt = 20.2 A/ms, Gate unenergized, TC = 75C)
T C, MAXIMUM ALLOWABLE CASE TEMPERATURE ( C)
FIGURE 1 - RMS CURRENT DERATING
PD , AVERAGE POWER DISSIPATION (WATTS) 125 120 115 110 105 100 95 90 85 80 75 0 5.0 10 15 20 25 30 35... |
| Description |
Triacs Silicon Bidirectional 40 Amperes RMS Triode Thyristors
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| File Size |
50.68K /
4 Page |
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NTE[NTE Electronics]
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| Part No. |
NTE5620
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| OCR Text |
...mmutating di/dt = 4.3A/ms, Gate unenergized, TC = +80C) Symbol IDRM VTM Min - - Typ - 1.7 Max 2 2.0 Unit mA V
IGT - - - - VGT - - - - 0.2 0.2 IH - 0.9 0.9 1.1 1.4 - - - 2.0 2.0 2.0 2.5 - - 50 - - - - 50 50 50 75
mA
V
mA
dv/dt... |
| Description |
TRIAC 800VRM, 8A, TO220 Full Pack
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| File Size |
20.66K /
3 Page |
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NTE[NTE Electronics]
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| Part No. |
NTE5629
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| OCR Text |
...dv/dt (VD = 400V, IT = 4A, Gate unenergized, TC = +80C, Note 1) . . . . . . . . . . . . . . . . . . . . 1V/s DC Gate-Trigger Current (VD = 12VDC, RL = 60, TC = +25C), IGT . . . . . . . . . . . . . . . . . 3mA Max (T2+ Gate +, T2- Gate -) Qu... |
| Description |
TRIAC - 400VRM, 4Amp
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| File Size |
16.98K /
2 Page |
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NTE[NTE Electronics]
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| Part No. |
NTE5638
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| OCR Text |
...tation VD = 400V, IT = 8A, Gate unenergized, dv/dt TC = +80C IGT VD = 12V, RL = 60
Electrical Characteristics (Cont'd): (TC = +25C, Maximum Ratings unless otherwise specified)
Parameter DC Gate Trigger Voltage Gate-Controlled Turn-On Ti... |
| Description |
TRIAC - 8A Isolated Tab
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| File Size |
18.92K /
2 Page |
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NTE[NTE Electronics]
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| Part No. |
NTE5646
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| OCR Text |
...
Commutating TC = +80C, Gate unenergized, dv/dt VD = 600V, IT = 10A, Note 1 Tgt VD = 600V, tR = 0.1s, IT = 10A (Peak)
Note 1. All values apply in either direction.
.420 (10.67) Max
.110 (2.79)
.147 (3.75) Dia Max
Isolated ... |
| Description |
TRIAC - Internally Triggered
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| File Size |
18.12K /
2 Page |
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NTE Electronics, Inc.
NTE[NTE Electronics]
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| Part No. |
NTE5679
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| OCR Text |
...tating di/dt = 21.6A/msec, Gate unenergized) 4V/s Maximum Rate of Change of On-State Current (IGT = 200mA, Rise Time = 0.1s), di/dt . 150A/s Maximum Gate Controlled Turn-On Time (IGT = 500mA, Rise Time = 0.1s), tgt . . . . . . . . . . . . 5... |
| Description |
TRIAC - 600V / 40A
THYRISTOR MODULE|TRIAC 晶闸管模块|可控
TRIAC - 600V, 40A
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| File Size |
18.07K /
2 Page |
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ONSEMI[ON Semiconductor]
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| Part No. |
T2500DG T2500D
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| OCR Text |
...mutating di/dt = 3.2 A/ms, Gate unenergized, TC = 80C) Critical Rate-of-Rise of Off-State Voltage (Rated VDRM, Exponential Voltage Rise, Gate Open, TC = 100C) 2. Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%. dv/dt(c) - 10 - V/ms VTM IGT ... |
| Description |
Silicon Bidirectional Thyristors
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| File Size |
47.98K /
4 Page |
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Motorola, Inc.
MOTOROLA[Motorola, Inc]
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| Part No. |
T2500
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| OCR Text |
...mutating di/dt = 3.2 A/ms, Gate unenergized, TC = 80C) Critical Rate-of-Rise of Off-State Voltage (Rated VDRM, Exponential Voltage Rise, Gate Open, TC = 100C) T2500B T2500D,M,N *Pulse Test: Pulse Width Symbol IDRM VTM IGT -- -- -- -- VGT --... |
| Description |
TRIACs 6 AMPERES RMS 200 thru 800 VOLTS
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| File Size |
69.93K /
4 Page |
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it Online |
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Price and Availability
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