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surviving Datasheet PDF File

For surviving Found Datasheets File :: 143 Search Time::1.266ms
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				ST Microelectronics
Part No.	TSC102
OCR Text	... 2.8 to 30 v wide common-mode surviving range: -16 to 60 v (reversed battery and load-dump conditions) low current consumption: i cc max = 420 a output amplifier fo r tailor-made signal conditioning -40 to 125 c operating temperatu...
Description	High-side current sense amplifier plus signal conditioning amplifier
File Size	639.00K / 24 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	TSC1031
OCR Text	...configuration wide common-mode surviving range: -16 to 75 v (reversed battery and load-dump conditions) supply voltage range: 2.7 to 5.5 v in single supply configuration low current consumption: i cc max = 360 a pin selectable gain:...
Description	Current Sense Amplifiers
File Size	411.23K / 23 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	TSC103
OCR Text	...configuration wide common-mode surviving range: -16 to 75 v (reversed battery and load-dump conditions) supply voltage range: 2.7 to 5.5 v in single-supply configuration low current consumption: i cc max = 360 a pin selectable gain:...
Description	Current Sense Amplifiers
File Size	391.31K / 23 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRHI7360SE
OCR Text	...ese devices are also capable of surviving transient ionization pulses as high as 1 x 10 12 rads (si)/sec, and return to normal opera- tion within a few microseconds. since the see pro- cess utilizes international rectifiers patented hexfe...
Description	Simple Drive Requirements 400V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-259AA package
File Size	34.18K / 4 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRHI7460SE IRHI7460SE-15
OCR Text	...ese devices are also capable of surviving transient ionization pulses as high as 1 x 10 12 rads (si)/sec, and return to normal operation within a few microseconds. since the see process utilizes international rectifiers pat- ented hexfet t...
Description	Simple Drive Requirements 500V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-259AA package
File Size	34.37K / 4 Page	View it Online	Download Datasheet

				M.S. Kennedy Corp. M.S. Kennedy Corporation
Part No.	BBF2805SE BBF2815S BBF2812S BBF2805SK BBF2803SH BBF2812SE BBF2803SE BBF2815SE BBF2800S BBF2812SH BBF2815SK BBF2803S BBF2805S
OCR Text	...ll operating temperatures while surviving very high g forces. bbf2800s series standard features include kelvin sense, indefinite short circuit protection, remote shutdown, output fault monitoring, turn on voltage point adjustment, switching...
Description	3.3V, 20W DC-DC converter 15V, 20W DC-DC converter 12V, 20W DC-DC converter Analog IC 18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL™ Architecture 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL™ Architecture 18-Mbit QDR™-II SRAM 2-Word Burst Architecture 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL™ Architecture 20W DC-DC Converter(输出功率20WDC-DC转换
File Size	162.89K / 7 Page	View it Online	Download Datasheet

				Amphenol, Corp.
Part No.	DHC2805SE DHC2803SE DHC2803SK DHC2803SH
OCR Text	...ll operating temperatures while surviving very high g forces. dhc2800s standard features include output fault monitor- ing and/or turn on voltage point programming via the shut- down pin. all three functions may be implemented simulta- neou...
Description	Analog IC 模拟IC
File Size	163.03K / 6 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	JANSF2N7424U JANSR2N7424U
OCR Text	...e devices are also ca- pable of surviving transient ionization pulses as high as 1 x 10 12 rads (si)/sec, and return to normal operation within a few microseconds. single event effect (see) testing of in- ternational rectifier p-channel r...
Description	HEXFET Transistor(HEXFET 晶体
File Size	133.04K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRHF7310SE
OCR Text	...ese devices are also capable of surviving transient ionization pulses as high as 1 x 10 12 rads (si)/sec, and return to normal opera- tion within a few microseconds. since the see pro- cess utilizes international rectifiers patented hexfe...
Description	N-Channel Single Event Effect (SEE) Rad Hard HEXFET Transistor(N 沟道单事件效Rad Hard HEXFET技术晶体管)
File Size	36.02K / 4 Page	View it Online	Download Datasheet

For surviving Found Datasheets File :: 143 Search Time::1.266ms
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