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Silicon Storage Technology, Inc.
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| Part No. |
SST29SF020-55-4C-NHE SST29SF020-55-4I-WHE SST29SF040-55-4I-WHE SST29SF040-55-4C-NHE SST29VF040-70-4C-WHE SST29SF040-55-4C-WHE SST29VF040-70-4C-NHE SST29VF040-70-4I-WHE SST29SF040-55-4I-NHE SST29VF040-70-4I-NHE SST29SF020-55-4I-NHE SST29SF020-55-4C-WHE SST29VF020-70-4I-WHE SST29VF020-70-4C-WHE SST29VF020-70-4I-NHE SST29VF020-70-4C-NHE
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| OCR Text |
... hed on the falling edge of the sixth we# pulse, while the command (20h) is latched on the rising edge of the sixth we# pulse. the internal erase operation begins after the sixth we# pulse. the end-of- erase operation can be determined usin... |
| Description |
2 Mbit / 4 Mbit (x8) Small-Sector Flash 512K X 8 FLASH 2.7V PROM, 70 ns, PDSO32
2 Mbit / 4 Mbit (x8) Small-Sector Flash 256K X 8 FLASH 2.7V PROM, 70 ns, PDSO32
2 Mbit / 4 Mbit (x8) Small-Sector Flash 256K X 8 FLASH 5V PROM, 55 ns, PQCC32
2 Mbit / 4 Mbit (x8) Small-Sector Flash 256K X 8 FLASH 5V PROM, 55 ns, PDSO32
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| File Size |
375.43K /
25 Page |
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it Online |
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SST
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| Part No. |
SST39VF320
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| OCR Text |
...ched on the falling edge of the sixth WE# pulse, while the command (30H or 50H) is latched on the rising edge of the sixth WE# pulse. The internal Erase operation begins after the sixth WE# pulse. The End-ofErase operation can be determined... |
| Description |
32 Mbit (x16) Multi-Purpose Flash
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| File Size |
289.68K /
24 Page |
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it Online |
Download Datasheet |
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SST
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| Part No. |
39VF080
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| OCR Text |
...hed on the falling edge of the sixth we# pulse, while the command (30h or 50h) is latched on the rising edge of the sixth we# pulse. the internal erase operation begins after the sixth we# pulse. the end-of- erase operation can be determin... |
| Description |
Search --To SST39VF080
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| File Size |
412.94K /
25 Page |
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it Online |
Download Datasheet |
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Silicon Storage Technology, Inc.
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| Part No. |
SST34HF3223B-90-4C-LP SST34HF3223B-70-4C-LP SST34HF3243B-70-4E-LP SST34HF3243B-70-4C-LP SST34HF3223B-70-4E-LP
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| OCR Text |
...ched on the falling edge of the sixth we# pulse, while the command (30h or 50h) is latched on the rising edge of the sixth we# pulse. the internal erase operation begins after the sixth we# pulse. see figures 13 and 14 for timing waveforms.... |
| Description |
KIT ISR PROGRAMMING NO WARP
One-PLL General-Purpose Flash-Programmable and 2-Wire Serially Programmable Clock Generator
混合存储器|静态存储器EEPROM中|CMOS | BGA封装| 56PIN |塑料
MIXED MEMORY|SRAM EEPROM|CMOS|BGA|56PIN|PLASTIC 混合存储器|静态存储器EEPROM中|的CMOS | BGA封装| 56PIN |塑料
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| File Size |
352.47K /
30 Page |
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it Online |
Download Datasheet |
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Price and Availability
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