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ON Semi
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| Part No. |
MAC16D_D ON0348
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| OCR Text |
... TM 1000
0
10
100 1000 RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)
10000
1
10
20 30 40 50 60 70 80 90 100 (di/dt)c, R...142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 ... |
| Description |
15 AMPERES RMS 400 thru 800 VOLTS
From old datasheet system
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| File Size |
128.22K /
8 Page |
 View
it Online |
Download Datasheet
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ON Semi
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| Part No. |
MAC16D ON0349
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| OCR Text |
... TM 1000
0
10
100 1000 RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)
10000
1 10
20 30 40 50 60 70 80 90 100 (di/dt)c, RATE...142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 ... |
| Description |
15 AMPERES RMS 400 thru 800 VOLTS
From old datasheet system
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| File Size |
134.61K /
8 Page |
View
it Online |
Download Datasheet |
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ONSEMI[ON Semiconductor]
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| Part No. |
MGP15N60U_D ON1858 MGP15N60U ON1857
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| OCR Text |
... VGE = 15 Vdc, L = 300 mH, Vd H RG = 20 , TJ = 125C) 125 C) Energy losses include "tail" (VCC = 360 Vdc, IC = 8 0 Ad Vd 8.0 Adc, VGE = 15 Vd...142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 ... |
| Description |
IGBT IN TO-220 15 A @ 90 26 A @ 25 600 VOLTS
From old datasheet system
Insulated Gate Bipolar Transistor
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| File Size |
116.67K /
5 Page |
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it Online |
Download Datasheet |
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Philips
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| Part No. |
BUK7614-55 BUK7614-55A
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| OCR Text |
... = 30 V; ID = 25 A; VGS = 10 V; RG = 10 Resistive load Measured from upper edge of drain tab to centre of die Measured from source lead soldering point to source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25C unles... |
| Description |
TrenchMOS(tm) transistor Standard level FET
TrenchMOS TM transistor Standard level FET
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| File Size |
50.92K /
8 Page |
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it Online |
Download Datasheet |
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ONSEMI[ON Semiconductor]
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| Part No. |
MGP7N60E_D ON1878 MGP7N60E ON1875
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| OCR Text |
...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT Thermal Resistance -- Junction to Ambient Maximum Le...142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 ... |
| Description |
IGBT & DIODE IN TO-220 7.0 A @ 90 10 A @ 25 600 VOLTS
From old datasheet system
Insulated Gate Bipolar Transistor
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| File Size |
114.34K /
5 Page |
View
it Online |
Download Datasheet |
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IXYS[IXYS Corporation]
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| Part No. |
IXFK27N80 IXFK25N80 IXFN27N80 IXFN25N80
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| OCR Text |
... 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C,...142 0.25 RG = 1 (External),
Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.... |
| Description |
CAP,Polypropylene,60uF,10-% Tol,10 % Tol
HiPerFETTM Power MOSFETs
MOSFET with FAST Intrinsic Diode
Discrete MOSFETs: HiPerFET Power MOSFETS
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| File Size |
159.97K /
4 Page |
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it Online |
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ONSEMI[ON Semiconductor]
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| Part No. |
MGY25N120D_D ON1933 MGY25N120D
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| OCR Text |
...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Case - Diode -- Junction to Ambient M...142 0.760 0.800 0.185 0.209 0.037 0.058 0.075 0.083 0.087 0.102 0.215 BSC 0.102 0.118 0.017 0.031 0.... |
| Description |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
From old datasheet system
IGBT & DIODE IN TO-264 25 A @ 90 38 A @ 25 1200 VOLTS SHORT CIRCUIT RATED
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| File Size |
167.51K /
6 Page |
View
it Online |
Download Datasheet |
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ONSEMI[ON Semiconductor]
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| Part No. |
MGY25N120_D ON1934 MGY25N120
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| OCR Text |
...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Ambient Maximum Lead Temperature for ...142 0.760 0.800 0.185 0.209 0.037 0.058 0.075 0.083 0.087 0.102 0.215 BSC 0.102 0.118 0.017 0.031 0.... |
| Description |
Insulated Gate Bipolar Transistor 38 A, 1200 V, N-CHANNEL IGBT, TO-264
IGBT IN TO-264 A @ 90 38 A @ 25 1200 VOLTS SHORT CIRCUIT RATED
From old datasheet system
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| File Size |
149.81K /
5 Page |
View
it Online |
Download Datasheet |
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