rg rg pdf Datasheet P11 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : 4ADBR 00M1R OP297C BSY51 N250012 SBR5035 SV4248US T2222
	Product Description
	Full Text Search

rg rg Datasheet PDF File

For rg rg Found Datasheets File :: 37397 Search Time::1.094ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |

				Renesas Electronics Corporation
Part No.	RJK03N2DPA
OCR Text	...1% 2. value at tch = 25 ?c, rg ? 50 ? 3. tc = 25 ?c r07ds0783ej0200 rev.2.00 feb 12, 2013 rjk03n2dpa preliminary r07ds0783ej0200 rev.2.00 page 2 of 6 feb 12, 2013 electrical characteristics (ta = 25c) item symb...
Description	30V, 40A, 4.0m max Built in SBD N Channel Power MOS FET High Speed Power Switching
File Size	231.33K / 7 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR
OCR Text	...VDD = -28V --- ID = -38A ns --- rg = 2.5 --- RD = 0.72, See Fig. 10 Between lead, nH --- and center of die contact --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS I SM V SD t rr ...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET（减振钢板基本\u003d- 55V的，的Rds（on）\u003d 0.02ohm，身份证\u003d- 74A条） Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A) -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package -55V Single P-Channel HEXFET Power MOSFET in a TO-262 package
File Size	159.46K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRF4905 IRF4B905 IRF4905PBF
OCR Text	...DD = -28V --- I D = -38A ns --- rg = 2.5 --- RD = 0.72, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5 D S Source-Drain Ratings ...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET（减振钢板基本\u003d- 55V的，的Rds（on）\u003d 0.02ohm，身份证\u003d- 74A条） -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	104.67K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5305L IRF5305S
OCR Text	...VDD = -28V --- ID = -16A ns --- rg = 6.8 --- RD = 1.6, See Fig. 10 Between lead, nH --- and center of die contact --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS I SM V SD t rr Q...
Description	Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A) Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	167.31K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5305
OCR Text	...VDD = -28V --- ID = -16A ns --- rg = 6.8 --- RD = 1.6, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5 D S Source-Drain Ratings a...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	120.44K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRF530A
OCR Text	...=1MHz See Fig 5 VDD=50V,ID=14A, rg=12 See Fig 13 VDS=80V,VGS=10V, ID=14A See Fig 6 & Fig 12 45 OO 45 OO Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Cur...
Description	N-CHANNEL POWER MOSFET Advanced Power MOSFET
File Size	253.11K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF530L IRF530NS IRF530NL
OCR Text	... VDD = 50V --- ID = 9.0A ns --- rg = 12 --- RD = 5.5, See Fig. 10 Between lead, 7.5 --- nH and center of die contact 640 --- VGS = 0V 160 --- pF VDS = 25V 88 --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM ...
Description	Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A) HEXFET Power MOSFET Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)
File Size	174.65K / 10 Page	View it Online	Download Datasheet

				Alpha & Omega Semicondu...
Part No.	AOL1436-08
OCR Text	....5m ? (v gs = 10v) uis tested rg,ciss,coss,crss tested general description the aol1436 uses advanced trench technology to provide excellent r ds(on) , shoot-through immunity and body diode characteristics. this device is ideally suit e...
Description	N-Channel Enhancement Mode Field Effect Transistor
File Size	134.37K / 6 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJK03N7DPA
OCR Text	...1% 2. value at tch = 25 ?c, rg ? 50 ? 3. tc = 25 ?c r07ds0788ej0200 rev.2.00 feb 12, 2013 rjk03n7dpa preliminary r07ds0788ej0200 rev.2.00 page 2 of 6 feb 12, 2013 electrical characteristics (ta = 25c) item symb...
Description	30V, 35A, 4.4m max.Built in SBD N Channel Power MOS FET High Speed Power Switching
File Size	205.80K / 7 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJK03N3DPA
OCR Text	...1% 2. value at tch = 25 ?c, rg ? 50 ? 3. tc = 25 ?c r07ds0784ej0200 rev.2.00 feb 12, 2013 rjk03n3dpa preliminary r07ds0784ej0200 rev.2.00 page 2 of 6 feb 12, 2013 electrical characteristics (ta = 25c) item symb...
Description	30V, 35A, 4.7m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
File Size	190.09K / 7 Page	View it Online	Download Datasheet

For rg rg Found Datasheets File :: 37397 Search Time::1.094ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |