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For rf-id Found Datasheets File :: 7022 Search Time::2.047ms
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				MACOM[Tyco Electronics]
Part No.	MRF175GU1111 MRF175GV
OCR Text	RF MOSFET Line RF Power Field-Effect Transistors N-Channel Enhancement-Mode Designed for broadband commercial and military applications...ID PD Tstg TJ Value 125 40 16 400 2.27 -65 to +150 200 Unit Vdc Vdc Adc Watts W/C C C THERMAL CHA...
Description	N-CHANNEL MOS BROADBAND RF POWER FETs
File Size	205.41K / 10 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF175GU MRF175GV
OCR Text	RF MOSFET Line RF Power Field-Effect Transistors N-Channel Enhancement-Mode Designed for broadband commercial and military applications...ID PD Tstg TJ Characteristic Thermal Resistance, Junction to Case Symbol RJC Value 65 65 40 26 400 ...
Description	N-CHANNEL MOS BROADBAND RF POWER FETs
File Size	183.29K / 8 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics]
Part No.	MRF175GV MRF175GU
OCR Text	RF MOSFET Line RF Power Field-Effect Transistors N-Channel Enhancement-Mode Designed for broadband commercial and military applications...ID PD Tstg TJ Characteristic Thermal Resistance, Junction to Case Symbol RJC Value 65 65 40 26 400 2...
Description	From old datasheet system N-CHANNEL MOS BROADBAND RF POWER FETs
File Size	210.44K / 11 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF175LU MRF175LV
OCR Text	RF MOSFET Line RF Power Field-Effect Transistors N-Channel Enhancement-Mode Designed for broadband commercial and military applications...ID PD Tstg TJ Value 65 40 13 270 1.54 - 65 to +150 200 Unit Vdc Vdc Adc Watts W/C C C THERMAL CH...
Description	N-CHANNEL BROADBAND RF POWER FETs
File Size	137.22K / 8 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics]
Part No.	MRF175LV MRF175LU
OCR Text	RF MOSFET Line RF Power Field-Effect Transistors N-Channel Enhancement-Mode Designed for broadband commercial and military applications...ID PD Tstg TJ Value 65 40 13 270 1.54 -65 to +150 200 Unit Vdc Vdc Adc Watts W/C C C THERMAL CHAR...
Description	N-CHANNEL BROADBAND RF POWER FETs
File Size	143.35K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF176 MRF176GU MRF176GV
OCR Text	RF MOSFET Line RF Power Field-Effect Transistors N-Channel Enhancement-Mode Designed for broadband commercial and military applications...ID PD Tstg TJ Value 125 40 16 400 2.27 - 65 to +150 200 Unit Vdc Vdc Adc Watts W/C C C THERMAL C...
Description	N-CHANNEL MOS BROADBAND RF POWER FETs
File Size	176.10K / 10 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF177
OCR Text	RF MOSFET Line RF Power Field Effect Transistors MRF177 100 W, 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFET N-Channel Enhance...ID PD Tstg TJ Value 65 65 40 16 270 1.54 - 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/C C C THER...
Description	N-CHANNEL BROADBAND RF POWER MOSFET
File Size	184.73K / 6 Page	View it Online	Download Datasheet

				Motorola, Inc. MOTOROLA[Motorola, Inc]
Part No.	MRF18030A MRF18030ALR3 MRF18030ALSR3
OCR Text	RF MOSFET Line RF Power Field Effect Transistors MRF18030ALR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF18030ALSR3 Designed for ...ID = 20 Adc) Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate - Source Leakage Curre...
Description	SEE A3282EUA-T CHOPPER STABILIZED LATCH W/TIN PLATING SEE A3282ELHLT-T RF Power Field Effect Transistors
File Size	504.66K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF18060A MRF18060ALSR3 MRF18060AR3 MRF18060ASR3
OCR Text	RF Power Field Effect Transistors MRF18060AR3 N-Channel Enhancement-Mode Lateral MOSFETs MRF18060ALSR3 Designed for PCN and PCS base station...ID = 10 Adc) Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate-Source Leakage Current...
Description	MRF18060A, MRF18060AR3, MRF18060ALSR3, MRF18060ASR3 1.80-1.88 GHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs RF POWER FIELD EFFECT TRANSISTORS
File Size	399.98K / 8 Page	View it Online	Download Datasheet

				Motorola, Inc. MOTOROLA[Motorola, Inc]
Part No.	MRF18060B MRF18060BLSR3 MRF18060BR3 MRF18060BSR3
OCR Text	RF MOSFET Line RF Power Field Effect Transistors Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz...ID = 10 Adc) Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate - Source Leakage Curre...
Description	HALL EFFFECT LATCH, SMD, SOT23W-3; Temp, op. min:-40(degree C); Temp, op. max:150(degree C); Pins, No. of:3; Case style:SOT-23W; Base number:3282; Bop, max:150G; Termination Type:SMD; Temperature, operating range:-40(degree C) to RoHS Compliant: Yes RF Power Field Effect Transistors
File Size	486.59K / 8 Page	View it Online	Download Datasheet

For rf-id Found Datasheets File :: 7022 Search Time::2.047ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |