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TOSHIBA
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| Part No. |
TC55WDM518AFFN15 TC55WDM518AFFN16 TC55WDM518AFFN20 TC55WDM518AFFN22
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| OCR Text |
... Sleep state and memory data is retained. After this signal has been de-asserted, the device will wake up when a read or write operation is initiated by ADV.
89
CLK
Input (NA)
37, 36, 35, 34, 33, 32, 100, 99, 82, 81, 44, 45, 46,... |
| Description |
36M 2.5V Pipelined NtRAM TM 2M Word by 18Bit SYNCHRONOUS NO-TURNAROUND STATIC RAM
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| File Size |
480.53K /
20 Page |
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it Online |
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TOSHIBA
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| Part No. |
TC55VDM518AFFN15 TC55VDM518AFFN16 TC55VDM518AFFN20 TC55VDM518AFFN22
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| OCR Text |
... Sleep state and memory data is retained. After this signal has been de-asserted, the device will wake up when a read or write operation is initiated by ADV.
89
CLK
Input (NA)
37, 36, 35, 34, 33, 32, 100, 99, 82, 81, 44, 45, 46,... |
| Description |
36M 3.3V Pipelined NtRAM 2M Word by 18Bit SYNCHRONOUS NO-TURNAROUND STATIC RAM
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| File Size |
507.60K /
22 Page |
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it Online |
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SRAM
Integrated Device Technology, Inc.
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| Part No. |
IDT70824S IDT70824S20GB IDT70824S20GI IDT70824S25G IDT70824S20PF IDT70824S20PFI IDT70824S25GI IDT70824S25PFB IDT70824S35GB IDT70824S35GI IDT70824S35PFI IDT70824S20PFB IDT70824S25GB IDT70824S25PFI IDT70824S35PFB IDT70824L IDT70824L20G IDT70824L20GB IDT70824L20GI IDT70824L20PF IDT70824L20PFB IDT70824L20PFI IDT70824L25G IDT70824L25GB IDT70824L25GI IDT70824L25PF IDT70824L25PFB IDT70824L25PFI IDT70824L35G IDT70824L35GB IDT70824L35GI IDT70824L35PF IDT70824L35PFB IDT70824L35PFI IDT70824L45G IDT70824L45GB IDT70824L45GI IDT70824L45PF IDT70824L45PFB IDT70824L45PFI IDT70824S35G IDT70824S45G IDT70824S45PF
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| OCR Text |
...gh-impedance state. All data is retained during CE = VIH, unless it is altered by the sequential port CE and CMD may not be LOW at the same time. When CMD is LOW, address lines A0-A2, R/W, and inputs and outputs I/O0-I/O12, are used to acce... |
| Description |
TRANS NPN W/RES 80 HFE SMINI-3 4K X 16 STANDARD SRAM, 45 ns, PQFP80
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM 4K X 16 STANDARD SRAM, 25 ns, PQFP80
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM 高K的16顺序访问随机存取存储器（单存取RAM⑩）
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM?
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| File Size |
206.98K /
21 Page |
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it Online |
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Spansion Inc.
Spansion, Inc.
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| Part No. |
DL324 DL323 DL322 AM29DL323GB120EF AM29DL323GT120EF AM29DL324GT120EF AM29DL324GB120EF AM29DL324GB30EF AM29DL324GB30EFN AM29DL324GB40EF AM29DL324GB40EFN AM29DL324GB70EF AM29DL324GB90EF AM29DL324GT30EF AM29DL324GT30EFN AM29DL324GT40EF AM29DL324GT40EFN AM29DL324GT70EF AM29DL324GT90EF AM29DL324GB30PCF AM29DL324GB30PCFN AM29DL324GB30PCI AM29DL324GB40PCF AM29DL324GB30PCIN AM29DL323GB120WMIN AM29DL323GB70WMI AM29DL322GB70WMI AM29DL322GB120EF AM29DL324GB120WMF AM29DL324GB30EI AM29DL324GB30EIN D323GT90UI D324GB90UI D324GB90UF AM29DL323GB120WMF AM29DL323GT120EI AM29DL323GT120WMIN AM29DL323GT30EI AM29DL324GB70WMIN AM29DL323GB30EFN AM29DL323GB30PCFN AM29DL323GB30EIN AM29DL324GT30WDIN AM29DL322GB120WMI AM29DL322GB120WMF AM29DL324GT90EI AM29DL322GB70EF AM29DL324GB40PCIN AM29DL322GB40PCF AM29DL322GT40EFN AM29DL322GT40WDF
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| OCR Text |
...vailability of this document is retained for reference and historical purposes only.
The following document contains information on Spansion memory products.
Continuity of Specifications
There is no change to this data sheet as a res... |
| Description |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 2M X 16 FLASH 3V PROM, 120 ns, PBGA48
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 2M X 16 FLASH 3V PROM, 70 ns, PBGA48
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 2M X 16 FLASH 3V PROM, 120 ns, PDSO48
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 32兆位个M × 8 2米x 16位）.0伏的CMOS只，同时作业快闪记忆
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 32兆位4个M × 8 2米x 16位）.0伏的CMOS只，同时作业快闪记忆
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 32兆位M × 8 2米x 16位）.0伏的CMOS只，同时作业快闪记忆
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 2M X 16 FLASH 3V PROM, 90 ns, PDSO48
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
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| File Size |
874.73K /
58 Page |
View
it Online |
Download Datasheet |
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