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				Macronix International Co., Ltd.
Part No.	MX29F016T4I-90 MX29F016TI-90 MX29F016MI-90
OCR Text	read, erase and program ? fast access time: 90/120ns ? low power consumption - 30ma maximum active current - 0.2ua typical standby current ?...write non-volatile random access memory. the mx29f016 is packaged in 40-pin tsop or 44-pin sop, 48-...
Description	16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY FPGA - 200000 SYSTEM GATE 2.5 VOLT - NOT RECOMMENDED for NEW DESIGN 2M X 8 FLASH 5V PROM, 90 ns, PDSO44
File Size	854.42K / 37 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HY5DU56822CF HY5DU561622CF HY5DU56422CF
OCR Text	... data outputs on dqs edges when read (edged dq) data inputs on dqs centers when write (centered dq) ? on chip dll align dq and dqs transition with ck transition ? dm mask write data-in at the both rising and falling edges of the data s...
Description	(HY5DU56xxxC(L)F) 256M DDR SDRAM
File Size	366.02K / 36 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HY5DU56822CT HY5DU561622CT
OCR Text	... data outputs on dqs edges when read (edged dq) data inputs on dqs centers when write (centered dq) ? on chip dll align dq and dqs transition with ck transition ? dm mask write data-in at the both rising and falling edges of the data s...
Description	(HY5DU56xx22CT) 256M-P DDR SDRAM
File Size	261.87K / 34 Page	View it Online	Download Datasheet

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