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  mos-1.9a Datasheet PDF File

For mos-1.9a Found Datasheets File :: 415    Search Time::1.312ms    
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    HGT1S14N36G3VL HGT1S14N36G3VLS HGTP14N36G3VL HGT1S14N36G3VLT

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. HGT1S14N36G3VL HGT1S14N36G3VLS HGTP14N36G3VL HGT1S14N36G3VLT
OCR Text ...ption This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition...1.3 28 1.25 1.15 1.6 1.7 1.8 25 250 1.45 1.6 2.2 2.9 2.2 V A A V V V V V Collector-Emitt...
Description DIODE ZENER SINGLE 500mW 30Vz 4.2mA-Izt 0.05 0.1uA-Ir 23Vr DO35-GLASS 5K/REEL
DIODE ZENER SINGLE 500mW 39Vz 3.2mA-Izt 0.05 0.1uA-Ir 32Vr DO35-GLASS 5K/AMMO
14A 360V N-Channel Logic Level Voltage Clamping IGBTs
14A, 360V N-CHANNEL, LOGIC LEVEL, VOLTAGE CLAMPING IGBTS
14A, 380V Logic Level, Voltage Clamped, Avalanche Energy Rated, ESD Protected IGBT
14A/ 360V N-Channel/ Logic Level/ Voltage Clamping IGBTs

File Size 221.07K  /  8 Page

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    HGT1S14N36G3VL HGT1S14N36G3VLS HGTP14N36G3VL

INTERSIL[Intersil Corporation]
Part No. HGT1S14N36G3VL HGT1S14N36G3VLS HGTP14N36G3VL
OCR Text ...ption This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition...1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 1999 UNITS V V A A V A A mJ W...
Description 14A/ 360V N-Channel/ Logic Level/ Voltage Clamping IGBTs
14A 360V N-Channel Logic Level Voltage Clamping IGBTs
14A, 360V N-CHANNEL, LOGIC LEVEL, VOLTAGE CLAMPING IGBTS
14A, 360V N-Channel,Logic Level, Voltage Clamping IGBTs(14A, 360V N沟道,逻辑电平,电压箝位绝缘栅双极型晶体)

File Size 109.79K  /  6 Page

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    HGT1S1N120BNDS HGTP1N120BND HGT1S1N120BNDS9A

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. HGT1S1N120BNDS HGTP1N120BND HGT1S1N120BNDS9A
OCR Text ...ns. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transis...1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Pro...
Description 5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(5.3A, 1200V,NPT系列N沟道绝缘栅双极型晶体管(带反并行超快速二极管 5.3 A, 1200 V, N-CHANNEL IGBT, TO-263AB
5.3A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

File Size 74.80K  /  7 Page

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    RUR1S1560S9A RUR1S1560S

FAIRCHILD[Fairchild Semiconductor]
Part No. RUR1S1560S9A RUR1S1560S
OCR Text ... IF dIF dt ta trr tb MOS IRF840 - 0.25 IRM IRM FIGURE 5. trr TEST CIRCUIT FIGURE 6. trr WAVEFORMS AND DEFINITIONS ...1 VDD = 50V EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE...
Description 15A, 600V ULTRAFAST DIODE

File Size 90.38K  /  5 Page

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    Renesas
Part No. 2SK2728
OCR Text .... 2SK2728 Silicon N Channel MOS FET High Speed Power Switching ADE-208-454B (Z) 3rd. Edition Jul. 1997 Features * * * * Low on-resis...1 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK2728 Absolute Maximum Ratings (Ta = 25C...
Description Transistors>Switching/MOSFETs

File Size 80.97K  /  13 Page

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    82077AA-1 82077AA-5 82077AA

INTEL[Intel Corporation]
Part No. 82077AA-1 82077AA-5 82077AA
OCR Text ...crystal X1 may be driven with a MOS level clock and X2 would be left unconnected X1 X2 33 34 4 82077AA Table 1 82077AA Pin Description (Continued) Symbol Pin IO Description HOST INTERFACE (Continued) IDENT 27 I IDENTITY Up...
Description CHMOS SINGLE-CHIP FLOPPY DISK CONTROLLER

File Size 471.35K  /  62 Page

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    IXYS[IXYS Corporation]
Part No. IXBH15N160 IXBH15N140
OCR Text MOS Transistor N-Channel, Enhancement Mode IXBH 15N140 IXBH 15N160 VCES IC25 VCE(sat) tfi TO-247 AD = = = = 1400/1600 V 15 A 5...1 MW Continuous Transient TC = 25C, TC = 90C TC = 25C, 1 ms Maximum Ratings 15N140 15N160 1400 14...
Description From old datasheet system
High Voltage BIMOSFET Monolithic Bipolar MOS Transistor

File Size 62.02K  /  4 Page

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    IRIS-W6754

International Rectifier
IRF
Part No. IRIS-W6754
OCR Text ...ting temperature *1 Refer to MOS FET A.S.O. curve *2 Maximum switching current The maximum switching current is the Drain current determined by the drive voltage of the IC and threshold voltage (Vth) of the MOS FET. *3 Refer to MOS FET T...
Description INTEGRATED SWITCHER

File Size 278.61K  /  8 Page

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    ADPOW[Advanced Power Technology]
Part No. APT1201R4BFLL APT1201R4SFLL
OCR Text MOS 7 (R) R FREDFET D3PAK TO-247 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOS...1 * Increased Power Dissipation * Easier To Drive * TO-247 or Surface Mount D3PAK Package D G ...
Description POWER MOS 7 FREDFET

File Size 119.94K  /  4 Page

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    UTC[Unisonic Technologies]
Part No. UTCMC14511
OCR Text ... constructed with complementary MOS (CMOS) enhancement mode devices and NPN bipolar output drivers in a single monolithic structure. The cir...1 QW-R502-021,B UTC MC14511 PIN CONFIGURATION B C LT BI LE D A Vss 1 2 3 4 5 6 7 8 16 15 14 ...
Description CMOS IC BCD-TO-SEVEN SEGMENT LATCH/DECODER/DRIVER

File Size 137.23K  /  9 Page

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