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New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conduct...
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| Part No. |
BUZ11
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| OCR Text |
...t conditions isd = 60 a vgs = 0 lso=36a di/dt = 100 a/us vdd = 30 v t, = 150 c win. typ. 75 0.24 max. 33 134 1.8 unit a a v ns nc *) pulsed: pulse duration = 300 us, duty cycle 1.5 % safe operating area thermal impedance ?o 2 4 b 8 10 ' 10 ... |
| Description |
N - CHANNEL 50V - 0.03Q - 33A TO-220 STripFET MOSFET
N - CHANNEL 50V - 0.03Q - 33A TO-220 STripFET?MOSFET
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| File Size |
127.27K /
3 Page |
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it Online |
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| Part No. |
UKT138
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| OCR Text |
...ble are s eries an, ebkx see a lso a v ailable s ection
5-45 a ir p rep ara tion : a ccessories e xhaust c leaner s eries amc for further technical details on this product request catalogue reference e5g air pr epar ation castle hill nsw... |
| Description |
4Kbit Serial I²C Bus EEPROM With Hardware Write Control on Top Half of Memory
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| File Size |
342.50K /
3 Page |
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it Online |
Download Datasheet |
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ISSI
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| Part No. |
IS25LP064
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| OCR Text |
...features, is25 lp 032/064 a lso support s dtr read. dtr allows high data throughput while running at lower clock frequencies. as dtr read option uses both rising and falling clock to drive output, the d ummy cycles are reduced ... |
| Description |
3V MULTI I/O SERIAL FLASH MEMORY
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| File Size |
1,340.11K /
83 Page |
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it Online |
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New Jersey Semi-Conductor P...
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| Part No. |
STP6NA80 STP6NA80FI
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| OCR Text |
...ecovery current test conditions lso = 6a vgs=0 !sd = 6 a di/dt = 100 a/u.s vdd = 100 v tj = 150 c (see test circuit, figure 5) min. typ. 850 15 35 max. 5.7 23 1.6 unit a a v ns m.c a *) pulsed: pulse duration = 300 us, duty cycle 1.5 % ?) p... |
| Description |
N- CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
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| File Size |
148.98K /
3 Page |
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it Online |
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New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
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| Part No. |
RFL1N08L RFL1N18L RFL1N20L RFP2N18L RFP2N20L
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| OCR Text |
...e symbol vsd !? test conditions lso=1 a lf-2a dif/d,=60 m/js limits rfl1n18l rfp2n18l min. _ max. 1.4 200{typ) rfl1n20l rfp2n20l min. _ max. 1,4 200(typ) units v ns ?pulse test: width < 300//s, duty cycle < 2%.
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| Description |
N-Channel Logic Level Power Field-Effect Transistors (L2 FET)
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| File Size |
88.27K /
2 Page |
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it Online |
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Sanken
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| Part No. |
STR30130
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| OCR Text |
... junction temperature tj l , +lso?c max 7 electrical characteristics(ta=25c ) description fixed output voltage line regulation conditions iin=6.9ma , test circuit 2 vin=l61 v(d.c) , 10=0.5a test circuit 1 vin=l45 - 170v(d.c... |
| Description |
Hybrid Voltage Regulator
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| File Size |
496.44K /
5 Page |
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it Online |
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List of Unclassifed Manufac...
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4DLCD-FT843
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| OCR Text |
...rectly from ftdi . ftdi a lso write and supply the libraries and demos for this shield/display combo. hardware support is provided by 4d systems. adam shield for arduino 4dlcd - ft843 breakout 2. featu... |
| Description |
Powered by the FTDI FT800 Video Engine
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| File Size |
558.60K /
10 Page |
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it Online |
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New Jersey Semi-Conduct...
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| Part No. |
RFM15N15
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| OCR Text |
...e symbol vsd !? test conditions lso=7.5a if=4a d,f/d,=100a//ffi limits rfm15n12 rfp15n12 min. ? max. 1.4 200(typ) rfm15n15 rfp15n15 min. ? max. 1,4 200(typ) units v ns 'pulse test: width '- 300 fja, duty cycle 2%.
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| Description |
N-Channel Enhancement-Mode Power Field-Effect Transistors
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| File Size |
83.50K /
2 Page |
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it Online |
Download Datasheet |
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Price and Availability
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