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For ls gs Found Datasheets File :: 2803 Search Time::1.969ms
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				International Rectifier
Part No.	IRL2910 L2910
OCR Text	...Qgs Qgd td(on) tr td(off) tf LD ls Ciss Coss Crss Max. Units Conditions --- V Vgs = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.02...gs C iss C rs s C iss C o ss = = = = 0V , f = 1MHz C g s + C g d , C d s S H O R TE D C gd C d...
Description	RES THICK FILM POWER 10 OHM 5W HEXFET Power MOSFET
File Size	120.70K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRL5602S IRF530S IRL5602STRR IRL5602STRL
OCR Text	...Qg Qgs Qgd td(on) tr td(off) tf ls Ciss Coss Crss Min. -20 --- --- --- --- -0.7 12 --- --- --- --- --- --- --- --- --- --- --- --- --- --...gs = 0 V 0.4 0.8 1.2 1.6 1 1 TC = 25 C TJ = 175 C Single Pulse 10 100 -VSD ,Source-to-D...
Description	-20V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
File Size	169.26K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRLBA1304 IRLBA1304P
OCR Text	...Qgs Qgd td(on) tr td(off) tf LD ls Ciss Coss Crss Min. Typ. Max. Units Conditions 40 --- --- V Vgs = 0V, ID = 250A --- 0.043 --- V/C Refe...gs = 0 V 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 1 TC = 25 C TJ = 175 C Single Pulse 10 10ms 100...
Description	HEXFET? Power MOSFET
File Size	103.65K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRLI2910
OCR Text	...Qgs Qgd td(on) tr td(off) tf LD ls Ciss Coss Crss C Min. Typ. Max. Units Conditions 100 --- --- V Vgs = 0V, ID = 250A --- 0.12 --- V/C Re...gs C iss C rss C is s C oss = = = = 0V , f = 1M H z C gs + C gd , C ds S H O R TE D C gd C ds ...
Description	HEXFET Power MOSFET
File Size	140.03K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRLU9343-701 IRLR9343 IRLU9343
OCR Text	...(off) tf Ciss Coss Crss Coss LD ls Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistanc...gs, Gate-to-Source Voltage (V) T J , Junction Temperature (C) Fig 3. Typical Transfer Characte...
Description	-55V Single P-Channel HEXFET Power MOSFET in a D-Pak package -55V Single P-Channel HEXFET Power MOSFET in a I-Pak package DIGITAL AUDIO MOSFET DIODE MED-FAST BAS116 80VR 250MA 1.25VF@150MA 1.5US TO-236AB -55 150C 数字音频MOSFET
File Size	242.32K / 10 Page	View it Online	Download Datasheet

				ON Semiconductor MOTOROLA[Motorola, Inc]
Part No.	MTD5N25E MTD5N25E_D ON2508 MTD5N25E-D
OCR Text	...rating junction temperature. LD ls -- -- 4.5 7.5 -- -- nH nH ta tb QRR -- -- -- -- 0.93 0.82 147 100 47 0.847 1.6 -- -- -- -- -- C ns Vdc --...gs remains virtually constant at a level known as the plateau voltage, VSGP. Therefore, rise and fal...
Description	TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 5.0 AMPERES 250 VOLTS RDS(on) = 1.0 OHM From old datasheet system
File Size	252.63K / 10 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon
Part No.	BUZ104L C67078-S1358-A2 BUZ104LE3046
OCR Text	... recovery time VR = 30 V, IF=ls, diF/dt = 100 A/s Reverse recovery charge VR = 30 V, IF=ls, diF/dt = 100 A/s Semiconductor Group ...gs [V] 0.24 a 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 7.0 8.0 10.0 ID 32 28 24 20 16 e g ...
Description	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated Low on-resistance) SIPMOS功率晶体管（N通道增强模式雪崩额定逻辑电平dv /额定的胸苷低电阻 From old datasheet system SIPMOS ? Power Transistor N-Channel SIPMOS Power Transistor
File Size	210.09K / 9 Page	View it Online	Download Datasheet

				Infineon SIEMENS[Siemens Semiconductor Group]
Part No.	BUZ104SL Q67040-S4006-A2
OCR Text	...e recovery time V R = 30 V, IF=ls, diF/dt = 100 A/s Qrr 50 75 C Reverse recovery charge V R = 30 V, IF=ls, diF/dt = 100 A/s ...gs) parameter: tp = 80 s VDS2 x ID x RDS(on)max 45 A I D 35 30 25 20 15 10 5 0 0 1 ...
Description	SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated 175°C operating temperature) SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated 175C operating temperature) SIPMOS ? Power Transistor SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated 175∑C operating temperature)
File Size	124.66K / 8 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon
Part No.	BUZ104S Q67040-S4007-A2
OCR Text	...e recovery time V R = 30 V, IF=ls, diF/dt = 100 A/s Qrr 50 75 C Reverse recovery charge V R = 30 V, IF=ls, diF/dt = 100 A/s ...gs) parameter: tp = 80 s VDS2 x ID x RDS(on)max 35 A I D 25 20 15 10 5 0...
Description	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175∑C operating temperature) 14 A, 55 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 SIPMOS ? Power Transistor SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature) SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175°C operating temperature)
File Size	126.55K / 8 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BUZ110SL Q67040-S4004-A2
OCR Text	...e recovery time V R = 30 V, IF=ls, diF/dt = 100 A/s Qrr 90 135 C Reverse recovery charge V R = 30 V, IF=ls, diF/dt = 100 A/s ...gs) parameter: tp = 80 s VDS2 x ID x RDS(on)max 70 A I D 50 40 30 20 10 ...
Description	High Speed CMOS Logic 7-Stage Binary Ripple Counter 14-TSSOP -55 to 125 SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated) From old datasheet system
File Size	119.33K / 8 Page	View it Online	Download Datasheet

For ls gs Found Datasheets File :: 2803 Search Time::1.969ms
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