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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
STD110NH02L_06 D110NH02L STD110NH02L STD110NH02LT4 STD110NH02L06
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| OCR Text |
...ns ns
54
Table 6.
Symbol isd isdM VSD(1) trr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current isd =... |
| Description |
N-channel 24V - 0.0044ohm - 80A - DPAK STripFET TM III Power MOSFET
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| File Size |
434.29K /
15 Page |
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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
STC6NF30V_07 C6NF30V STC6NF30V
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| OCR Text |
...acteristics
Table 6.
Symbol isd isdM(1) VSD(2) trr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current IS... |
| Description |
N-channel 30V - 0.020ohm - 6A - TSSOP8 2.5V-drive STripFE TM II Power MOSFET
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| File Size |
250.46K /
13 Page |
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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
STB95NF03 STB90NF03
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| OCR Text |
...rrent Limited by Package
(1) isd 95A, di/dt 150A/s, VDD V (BR)DSS, Tj TJMAX. (2) Starting T j = 25 oC, ID = 47.5A, VDD = 25V
March 2003
1/9
STB95NF03
THERMAL DATA
Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Ther... |
| Description |
N-CHANNEL 30V - 0.0065 ohm - 95A D2PAK STripFET?/a> II POWER MOSFET
N-CHANNEL 30V - 0.0065 ohm - 95A D?PAK STripFET⑩ II POWER MOSFET
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| File Size |
586.29K /
9 Page |
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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
STB75NH02L_06 B75NH02L STB75NH02L STB75NH02LT4
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| OCR Text |
...
STB75NH02L
Table 6.
Symbol isd isdM VSD(1) trr Qrr IRRM
Electrical characteristics
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on Voltage Reverse recovery time Reverse recovery charge ... |
| Description |
N-Channel 24V - 0.0062ohm - 60A - D2PAK STripFET TM III Power MOSFET
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| File Size |
388.60K /
13 Page |
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New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
New Jersey Semiconductors
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| Part No. |
IRFP450
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| OCR Text |
...ited by safe operating area (1) isd <14 a, di/dt < 130 a^is. vdd < v(br,oss. tj < tjmax nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj sem... |
| Description |
N - CHANNEL 500V - 0.33Q - 14A - TO-247 PowerMESH MOSFET
N - CHANNEL 500V - 0.33Q - 14A - TO-247 PowerMESH?/a> MOSFET
Trans MOSFET N-CH 500V 14A 3-Pin(3 Tab) TO-247
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| File Size |
837.29K /
3 Page |
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STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
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| Part No. |
STP20NM60A STB20NM60A-1 STF20NM60A STB20NM60A
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| OCR Text |
...ited by safe operating area (1) isd 20A, di/dt 400 A/s, VDD V(BR)DSS, Tj TJMAX. (*) Limited only by maximum temperature allowed
THERMAL DATA
I2PAK/TO-220 Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junc... |
| Description |
N-CHANNEL 650V@Tjmax - 0.25 Ohm - 20A I2PAK/TO-220/TO-220FP
N-CHANNEL 650V@Tjmax - 0.25 Ohm - 20A I?PAK/TO-220/TO-220FP
N-CHANNEL 600V - 0.25 OHM - 20A I2PAK/TO-220/TO-220FP MDMESH MOSFET
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| File Size |
298.95K /
12 Page |
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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
STB70NF3LL_06 STB70NF3LL STB70NF3LLT4 STB70NF3LL06
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| OCR Text |
...ed by safe operating area 3. 4. isd 70A, di/dt 350A/s, VDD V(BR)DSS, TJ TJMAX Starting TJ = 25 oC, ID = 35A, VDD = 25V
Table 2.
Symbol RthJC RthJA Tl
Thermal data
Parameter Thermal resistance junction-case Max Thermal resistance j... |
| Description |
N-channel 30V - 0.0075ohm - 70A - D2PAK Low gate charge STripFET TM II Power MOSFET
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| File Size |
437.57K /
13 Page |
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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
STB60NH02L_04 B60NH02L STB60NH02L STB60NH02LT4
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| OCR Text |
...s
SOURCE DRAIN DIODE
Symbol isd isdM VSD (4) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current isd = 30 A VGS = 0 36 36 2 ... |
| Description |
N-CHANNEL 24V - 0.0085 ohm - 60A D2PAK STripFET TM III POWER MOSFET
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| File Size |
561.17K /
11 Page |
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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
STB50NE10_06 STB50NE10 STB50NE10T4 STB50NE1006
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| OCR Text |
...acteristics
Table 6.
Symbol isd isdM (1) VSD (2) trr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage isd = 50A, VGS = 0 155 815 10.5 Test conditions Min. Typ. Max. 50 200 1... |
| Description |
N-channel 100V - 0.021Ω - 50A - D2PAK STripFET?/a> Power MOSFET
N-channel 100V - 0.021Ω - 50A - D2PAK STripFET Power MOSFET
N-channel 100V - 0.021ヘ - 50A - D2PAK STripFET⑩ Power MOSFET
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| File Size |
384.59K /
13 Page |
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it Online |
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