id-55a pdf Datasheet P11 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : SDA138F EMIF0 EM55Q450 LB1674 20AU100 KBPC3500 AN1191 ASI10562
	Product Description
	Full Text Search

id-55a Datasheet PDF File

For id-55a Found Datasheets File :: 285 Search Time::1.468ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |

				INFINEON[Infineon Technologies AG]
Part No.	SPI80N03S2L-05 SPP80N03S2L-05 SPB80N03S2L-05
OCR Text	... Product Summary VDS R DS(on) ID P- TO262 -3-1 P- TO263 -3-2 30 5.2 80 P- TO220 -3-1 V m A * Enhancement mode * Logic Level * E...55A V GS=4.5V, I D=55A, SMD version Drain-source on-state resistance4) V GS=10V, I D=55A V GS=10...
Description	80 A, 30 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA OptiMOS Power-Transistor 的OptiMOS功率晶体 Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 4.9mOhm, 80A, LL Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 5.2mOhm, 80A, LL
File Size	412.68K / 8 Page	View it Online	Download Datasheet

				Philips Semiconductors 3M Company
Part No.	BUK7606-55 BUK7606-55A
OCR Text	...lised continuous drain current. id% = 100 i d /i d 25 ?c = f(t mb ); conditions: v gs 3 5 v fig.3. safe operating area. t mb = 25 ?c...55a standard level fet fig.7. typical on-state resistance, t j = 25 ?c . r ds(on) = f(v gs ); ...
Description	TrenchMOS（TM）transistor Standard level FET(TrenchMOS（TM）晶体管标准电平FET) Aluminum Snap-In Capacitor; Capacitance: 2200uF; Voltage: 50V; Case Size: 22x25 mm; Packaging: Bulk TrenchMOSTM）transistor Standard level FET(TrenchMOSTM）晶体管标准电平FET) TrenchMOS（商标）一级标准场效应晶体管（TrenchMOS（商标）晶体管标准电平场效应管）
File Size	70.00K / 7 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXFB110N60P3
OCR Text	...th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = 30V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125C Characteristic Values Min...55A, Note 1 Characteristic Values Min. Typ. Max. 65 105 18 1650 5.5 1.0 63 19 77 11 245 83 53 S nF p...
Description	Polar3 HiPerFET Power MOSFET
File Size	137.57K / 5 Page	View it Online	Download Datasheet

				Philips Semiconductors NXP Semiconductors N.V.
Part No.	BUK9606-55 BUK9606-55A
OCR Text	...lised continuous drain current. id% = 100 i d /i d 25 ?c = f(t mb ); conditions: v gs 3 5 v fig.3. safe operating area. t mb = 25 ?c...55a logic level fet fig.7. typical on-state resistance, t j = 25 ?c . r ds(on) = f(v gs ); con...
Description	TrenchMOS（TM）transistor Logic level FET(TrenchMOS（TM）晶体管逻辑电平FET) TrenchMOS transistor Logic level FET TrenchMOSTM）transistor Logic level FET(TrenchMOSTM）晶体管逻辑电平FET)
File Size	70.16K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7N1405
OCR Text	...F7N1405 BVDSS 55V RDS(on) ID 0.0053 55A* Seventh Generation HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefi...
Description	55V Single N-Channel Hi-Rel MOSFET in a SMD-1 package HEXFET-R POWER MOSFET SURFACE MOUNT (SMD-1)
File Size	134.97K / 7 Page	View it Online	Download Datasheet

				FAIRCHILD SEMICONDUCTOR CORP FAIRCHILD[Fairchild Semiconductor]
Part No.	FQP55N10
OCR Text	...te Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25C unless otherwise noted Parameter Drain-Source Vo...55A, VDD = 25V, RG = 25 , Starting TJ = 25C 3. ISD 55A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25...
Description	100V N-Channel MOSFET
File Size	665.66K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier] http://
Part No.	IRFZ44VSPBF IRFZ44VLPBF IRFZ44VL
OCR Text	...= 60V RDS(on) = 16.5m G S ID = 55A Description Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined wi...
Description	60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
File Size	213.84K / 10 Page	View it Online	Download Datasheet

				SYNC POWER Crop.
Part No.	SPN1024 SPN1024S56RG
OCR Text	...70 TA=25 TA=80 Symbol VDSS VGSS ID IDM IS PD TJ TSTG Typical 20 12 Unit V V A A A W 0.65 0.45 1.0 0.3 0.35 0.19 -55/150 -55/150 ...55A VGS=1.8V,ID=0.45A gfs VDS=10V,ID=0.4A VSD IS=0.15A,VGS=0V Qg Qgs Qgd td(on) tr td(off) tf ...
Description	Dual N-Channel Enhancement Mode MOSFET
File Size	198.05K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFZ44VPBF
OCR Text	...= 60V RDS(on) = 16.5m G S ID = 55A Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast s...
Description	ULTRA LOW ON-RESISTANCE
File Size	145.90K / 8 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	STP55NF03L STB55NF03L-1
OCR Text	ID 55 A s s TYPICAL RDS(on) = 0.01 OPTIMIMIZED FOR HIGH SWITCHING OPERATIONS LOW GATE CHARGE LOGIC LEVEL GATE DRIVE 1 2 3 DESC...55A VGS=4.5V SWITCHING OFF Symbol td(off) tf Parameter turn-off Delay Time Fall Time Test Condit...
Description	N-CHANNEL 30V - 0.01 ohm - 55A TO-220/D2PAK/I2PAK STripFET⑩ II POWER MOSFET N-CHANNEL 30V - 0.01 ohm - 55A TO-220/D2PAK/I2PAK STripFET II POWER MOSFET
File Size	84.27K / 8 Page	View it Online	Download Datasheet

For id-55a Found Datasheets File :: 285 Search Time::1.468ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |