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意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
SGS Thomson Microelectronics
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| Part No. |
SD1224-10 2786 1224-10
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| OCR Text |
...lue Min. Typ. Max. Unit
POUT GP IMD COB
Note: PI N
f = 30 MHz f = 30 MHz f = 30 MHz f = 1 MHz = 0.48W
VCE = 28 V VCE = 28 V VCE = 28 V VCB = 30 V
ICQ = 25 mA ICQ = 25 mA ICQ = 25 mA
30 18 -- --
-- 20 - 32 --
-- -- - 28... |
| Description |
From old datasheet system
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
HF SSB APPLICATIONS RF & MICROWAVE TRANSISTORS
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| File Size |
46.69K /
3 Page |
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SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
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| Part No. |
SD1895-03 2859 SD1895-3
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| OCR Text |
...lue Min. Typ. Max. Unit
POUT GP c
f = 1.65 GHz f = 1.65 GHz f = 1.65 GHz
PIN = 2.4 W PIN = 2.4 W PIN = 2.4 W
VCE = 28 V VCE = 28 V VCE = 28 V
20 9.2 48
-- -- --
-- -- --
W dB %
TYPICAL PERFORMANCE
POWER OUTPUT ... |
| Description |
1.6 GHz SATCOM APPLICATIONS RF & MICROWAVE TRANSISTORS
From old datasheet system
RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS
RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS 射频
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| File Size |
44.18K /
4 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
MS1078
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| OCR Text |
... = 30 MHz POUT POUT = 130 W PEP GP IMD * POUT = 130 W PEP POUT = 130 W PEP C f = 1 MHz COB Note: * f1 = 30.00 MHz, f2 = 30.01 MHz
Min. 130 12 37
MS1078 Typ.
Max.
Units W dB dBc % pF
-30 250
ELECTRICALS ELECTRICALS
Copyr... |
| Description |
RF & MICROWAVE TRANSISTORS
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| File Size |
101.10K /
4 Page |
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it Online |
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MA-Com
MACOM[Tyco Electronics]
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| Part No. |
PH0810-15
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| OCR Text |
...
BVCES
ICES BVCEO BVEBO hFE GP
RL VSWR IMD3
Parameter Collector-Emitter Breakdown Collector-Emitter Leakage Collector-Emitter Br...IB=2.5 mA VCE=5.0 V, IC=0.5 A VCC=24 V, ICQ=100 mA, Pout= 15W, f=900 MHz VCC=24 V, ICQ=100 mA, Pout=... |
| Description |
850-960 MHz, 15 W, wireless power transistor
Wireless Power Transistor 15 Watts 850 - 960 MHz
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| File Size |
30.31K /
2 Page |
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it Online |
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NXP Semiconductors
Philips Semiconductors
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| Part No. |
BLY88C
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| OCR Text |
...f MHz 175 175 PL W 15 15 > typ. Gp dB 8,0 7,5 > % 60 typ. 67 zi 2,3 + j2,2 - YL mS 130 - j4,4 -
PIN CONFIGURATION
PINNING - SOT120 P...IB = 0,9 A Transition frequency at f = 100 MHz(1) -IE = 1,5 A; VCB = 13,5 V -IE = 4,5 A; VCB = 13,5 ... |
| Description |
VHF power transistor
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| File Size |
58.87K /
11 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
MS1079
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| OCR Text |
GP = 13 dB MINIMUM COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1079 is a 50 V epitaxial silicon NPN planar transistor designed prima...IB = 0mA IC = 0mA IE = 0mA IE = 0mA IC = 10A 110 55 4.0 ----15
Value Typ.
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Max.
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| Description |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
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| File Size |
255.44K /
4 Page |
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it Online |
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ST Microelectronics
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| Part No. |
2SD1398
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| OCR Text |
...e Min. Typ. Max. Unit
POUT c GP COB
Note: P IN
f = 850 -- 960 MHz f = 850 -- 960 MHz f = 850 -- 960 MHz f = 1 MHz =
0.60w
VCE = 24 V VCE = 24 V VCE = 24 V VCB = 24 V
ICQ = 25 mA ICQ = 25 mA ICQ = 25 mA
6 -- 10 --
-- 50 1... |
| Description |
RF & MICROWAVE TRANSISTORS 850-960 MHz APPLICATIONS
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| File Size |
77.15K /
7 Page |
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it Online |
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