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  gate-emitter Datasheet PDF File

For gate-emitter Found Datasheets File :: 10028    Search Time::1.016ms    
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    CM150DY-28H

Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Part No. CM150DY-28H
OCR Text ...tor-Emitter Voltage (G-E SHORT) gate-emitter Voltage (C-E SHORT) Collector Current Peak Collector Current Emitter Current Emitter Current-Pulse Maximum Collector Dissipation Max. Mounting Torque M5 Terminal Screws Max. Mounting Torque M6 Mo...
Description Dual IGBTMOD 150 Amperes/1400 Volts

File Size 69.57K  /  4 Page

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    CM200DY-28H

MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. CM200DY-28H
OCR Text ...tor-Emitter Voltage (G-E SHORT) gate-emitter Voltage (C-E SHORT) Collector Current (TC = 25C) Peak Collector Current Emitter Current** (TC = 25C) Peak Emitter Current** Maximum Collector Dissipation (TC = 25C, Tj 150C) Mounting Torque, M6 ...
Description IGBT Modules:1400V
HIGH POWER SWITCHING USE INSULATED TYPE

File Size 49.59K  /  4 Page

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    CM300DY-28H

MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. CM300DY-28H
OCR Text ...tor-Emitter Voltage (G-E SHORT) gate-emitter Voltage (C-E SHORT) Collector Current (TC = 25C) Peak Collector Current Emitter Current** (TC = 25C) Peak Emitter Current** Maximum Collector Dissipation (TC = 25C, Tj 150C) Mounting Torque, M6 ...
Description IGBT Modules:1400V
HIGH POWER SWITCHING USE INSULATED TYPE

File Size 49.35K  /  4 Page

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    CM50DY-28H

MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. CM50DY-28H
OCR Text ...tor-Emitter Voltage (G-E SHORT) gate-emitter Voltage (C-E SHORT) Collector Current (TC = 25C) Peak Collector Current Emitter Current** (TC = 25C) Peak Emitter Current** Maximum Collector Dissipation (TC = 25C, Tj 150C) Mounting Torque, M5 ...
Description IGBT Modules:1400V
MEDIUM POWER SWITCHING USE INSULATED TYPE

File Size 48.00K  /  4 Page

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    CM75DY-28H

Mitsubishi Electric Sem...
Powerex Power Semiconductors
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
Part No. CM75DY-28H
OCR Text ...tor-Emitter Voltage (G-E SHORT) gate-emitter Voltage (C-E SHORT) Collector Current (TC = 25C) Peak Collector Current Emitter Current** (TC = 25C) Peak Emitter Current** Maximum Collector Dissipation (TC = 25C, Tj 150C) Mounting Torque, M5 ...
Description HIGH POWER SWITCHING USE INSULATED TYPE
IGBT Modules:1400V

File Size 47.54K  /  4 Page

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    RJP1CS08DWT-15

Renesas Electronics Corporation
Part No. RJP1CS08DWT-15
OCR Text ... (10 s min.) outline 1. gate 2. collector (the back) 3. emitter die: rjp1cs08dwt-80 wafer: rjp1cs08dwa-80 2 c 2 1 g e 3 1 3 3 3 3 absolute maximum ratings (tc = 25c unless otherwise noted) item symbol ratings unit collector...
Description 1250V - 200A - IGBT Application: Inverter

File Size 64.22K  /  4 Page

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    IR2137IGBT IR2137

IRF[International Rectifier]
Part No. IR2137IGBT IR2137
OCR Text ...akahashi The new IR2137 IGBT Gate Driver IC integrates Ground Fault and Over-Current Protection with Soft Shutdown, thus providing a comp...emitter while the device is fully on. If the voltage exceeds a specified limit, the associated gate ...
Description IGBT Protection in AC or BLDC Motor Drives

File Size 85.70K  /  9 Page

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    RJP1CS07DWT-15

Renesas Electronics Corporation
Part No. RJP1CS07DWT-15
OCR Text ... (10 s min.) outline 1. gate 2. collector (the back) 3. emitter die: rjp1cs07dwt-80 wafer: rjp1cs07dwa-80 2 c 2 1 g e 3 1 3 3 3 3 absolute maximum ratings ( tc = 25c unless otherwise noted ) item symbol ratings unit collect...
Description 1250V - 150A - IGBT Application: Inverter

File Size 64.32K  /  4 Page

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    MG800J2YS50A

Toshiba Semiconductor
Part No. MG800J2YS50A
OCR Text ...stics Collector-emitter voltage gate-emitter voltage Collector current Forward current Collector power dissipation (Tc = 25C) Junction temperature Storage temperature range Isolation voltage Screw torque Terminal: M8 Mounting: M5 DC DC Symb...
Description IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA IGBT Module Silicon N Channel IGBT

File Size 206.63K  /  7 Page

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    MSAGX75F60A

MICROSEMI[Microsemi Corporation]
Part No. MSAGX75F60A
OCR Text ...s vce(sat) N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features * * * * * * * Rugged polysilicon gate cell structure high current h...Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ 25C SYMBOL BVCES BVCGR VGES VGEM IC25 ...
Description N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

File Size 45.08K  /  2 Page

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For gate-emitter Found Datasheets File :: 10028    Search Time::1.016ms    
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