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  field-mounting Datasheet PDF File

For field-mounting Found Datasheets File :: 5616    Search Time::1.875ms    
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    MTW33N10E ON2695

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Part No. MTW33N10E ON2695
OCR Text ...ta Sheet TMOS E FET.TM Power Field Effect Transistor TO 247 with Isolated Mounting Hole MTW33N10E Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This advanced TMOS E-FET is designed to withstand high energy in ...
Description TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM 33 A, 100 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE
From old datasheet system

File Size 227.85K  /  8 Page

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    PHU101NQ03LT PHP101NQ03LT

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. PHU101NQ03LT PHP101NQ03LT
OCR Text ...cription N-channel logic level field-effect power transistor in a plastic package using TrenchMOSTM technology. Product availability: PHP10...mounting base, connected to drain (d) g s MBB076 MBK106 1 Top view 2 3 MBK915 12...
Description TrenchMOS logic level FET 75 A, 30 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

File Size 84.29K  /  13 Page

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    TMS06105 TMS06112 TMS06115 TMS06124 TMS06212 TMS06215 TMS25105 TMS25105C TMS25105F TMS25112 TMS25112C TMS25112F TMS25115

TRACO ELECTRONIC AG.
TRACOPOWER[TRACO Electronic AG]
http://
Part No. TMS06105 TMS06112 TMS06115 TMS06124 TMS06212 TMS06215 TMS25105 TMS25105C TMS25105F TMS25112 TMS25112C TMS25112F TMS25115 TMS25115C TMS25115F TMS25124 TMS25124C TMS25124F TMS25212 TMS25212C TMS25212F TMS25215 TMS25215C TMS25215F TMS10105 TMS10105F TMS10112 TMS10112F TMS10115 TMS10115F TMS10124 TMS10124F TMS10212 TMS10212F TMS10215 TMS10215F TMS15105 TMS15105C TMS15105F TMS15112 TMS15112C TMS15112F TMS15115 TMS15115C TMS15115F TMS15124 TMS15124C TMS15124F TMS15212 TMS15212C TMS15212F TMS15215 TMS15215C TMS15215F TRACOELECTRONICAG.-TMS15112F
OCR Text ...lectrostatic discharge ESD - RF field susceptibility - Electrical fast transients/bursts on mainsline - Surge - Vin = 115 VAC - Vin = 230 VA...mounting with solder pins TMS 6/10/15 W (0.39) 10 10 (0.39) Dimensions 3 a b 2 1 a...
Description    MicroSwitcher
MicroSwitcher MicroSwitcher
CONNECTOR ACCESSORY MicroSwitcher
CAT .0022UF 100V PEN FILM 1206 5

File Size 89.72K  /  6 Page

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    DT014L

DIODES[Diodes Incorporated]
Part No. DT014L
OCR Text FIELD EFFECT TRANSISTOR Features * * * * * High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast...mounting surface of the drain pins. RQJC is guaranteed by design while RQCA is determined by the use...
Description N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

File Size 71.91K  /  4 Page

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    DT014

Diodes Incorporated
Part No. DT014
OCR Text FIELD EFFECT TRANSISTOR Features * * * * * High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast...mounting surface of the drain pins. RQJC is guaranteed by design while RQCA is determined by the use...
Description N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

File Size 71.97K  /  4 Page

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    DT455N

DIODES[Diodes Incorporated]
Part No. DT455N
OCR Text FIELD EFFECT TRANSISTOR Features * * * * * High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast...mounting surface of the drain pins. RQJC is guaranteed by design while RQCA is determined by the use...
Description N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

File Size 87.56K  /  4 Page

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    DT456P

DIODES[Diodes Incorporated]
Part No. DT456P
OCR Text FIELD EFFECT TRANSISTOR Features * * * * * High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast...mounting surface of the drain pins. RQJC is guaranteed by design while RQCA is determined by the use...
Description P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

File Size 72.57K  /  4 Page

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    LET9060S

STMICROELECTRONICS[STMicroelectronics]
Part No. LET9060S
OCR Text ...annel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applica...Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294) ABSOL...
Description RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

File Size 294.85K  /  10 Page

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    MTDF1C02HD ON2520 ON2519

MOTOROLA[Motorola, Inc]
Part No. MTDF1C02HD ON2520 ON2519
OCR Text ... Products Complementary TMOS Field Effect Transistors MTDF1C02HD Motorola Preferred Device Micro8TM devices are an advanced series...Mounting Information for Micro8 Package Provided 3 S COMPLEMENTARY DUAL TMOS POWER FET 20 VOLTS ...
Description COMPLEMENTARY DUAL TMOS POWER FET
From old datasheet system

File Size 272.45K  /  14 Page

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    MTDF1N02HD ON2522 ON2521

MOTOROLA[Motorola, Inc]
Part No. MTDF1N02HD ON2522 ON2521
OCR Text ...d Device TMOS Dual N-Channel Field Effect Transistor Micro8TM devices are an advanced series of power MOSFETs which utilize Motorola's H...Mounting Information for Micro8 Package Provided DUAL TMOS POWER MOSFET 1.7 AMPERES 20 VOLTS RDS(...
Description DUAL TMOS POWER MOSFET 1.7 AMPERES 20 VOLTS RDS(on) = 0.120 OHM
From old datasheet system

File Size 215.97K  /  12 Page

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For field-mounting Found Datasheets File :: 5616    Search Time::1.875ms    
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