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fet2-16 Datasheet PDF File

For fet2-16 Found Datasheets File :: 171 Search Time::4.234ms
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				NXP Semiconductors N.V.
Part No.	BUK9MTT-65PBB
OCR Text	...tions min typ max unit fet1 and fet2 static characteristics r dson drain-source on-state resistance v gs =5v; i d =3a; t j =25c; see fig...16 nxp semiconductors buk9mtt-65pbb dual trenchplus fet logic level fet 2. pinning information 3. ...
Description	Dual TrenchPLUS FET Logic Level FET
File Size	186.90K / 16 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	TBB1010KMTL-H TBB101011
OCR Text	...ion are applicable for fet1 and fet2 unit item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 6 ? ...16 20 ma v ds = 5 v, v g1 = 5 v v g2s = 4 v, r g = 120 k forward transfer admittance \|y fs...
Description	Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier
File Size	109.26K / 8 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	TBB1004DMTL-H TBB100411
OCR Text	...on are applicable for vhf unit (fet2) (ta = 25 c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)...16 20 24 ma v ds = 5 v, v g1 = 5 v v g2s = 4 v, r g = 100 k forward transfer admittance \|y...
Description	Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
File Size	113.42K / 9 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	TBB1005EMTL-H TBB100511
OCR Text	...on are applicable for vhf unit (fet2) (ta = 25 c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br...16/f., tower 2, grand century place, 193 prince edward road west, mongkok, kowloon, hong kong tel: +...
Description	Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
File Size	113.51K / 9 Page	View it Online	Download Datasheet

				Sanken
Part No.	SLA5054
OCR Text	fet2 fet3 symbol specification unit conditions specification unit conditions specification unit conditions min typ max min typ max min typ m...16. 40 ns v gs =5v, see fig.3 on page 16. 50 ns v gs =5v, see fig.3 on page 16. v sd 1.0 1.5 v i sd ...
Description	S-shape Correction Switch Array For CRT Display
File Size	53.13K / 2 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	FW232A
OCR Text	... d allowable power dissipation (fet2), p d -- w allowable power dissipation (fet1), p d -- w 0 20 40 60 80 100 120 140 160 0 0.5 1.0 3.0 2.5 2.3 2.0 1.5 it09740 mounted on a ceramic board (1500mm 2 5 0.8mm), pw 10s 1unit total d...
Description	N-Channel Silicon MOSFET General-Purpose Switching Device
File Size	35.86K / 4 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	TBB1012MMTL-H TBB101211
OCR Text	...= 100 k , f = 900 mhz ? fet2 (ta = 25 c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br...16.2 650 0.826 -65.8 2.89 119.4 0.003 83.8 0.972 -17.2 700 0.801 -72.4 2.85 114.4 0.003 113.5 0....
Description	Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
File Size	156.46K / 14 Page	View it Online	Download Datasheet

For fet2-16 Found Datasheets File :: 171 Search Time::4.234ms
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