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Vishay Dale
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| Part No. |
M4946501TR0100FS51 M4946507TR1000FS73 M4946506TR0330FB12 TR1000FR55 TR3000FB12 M4946506TR0649FS70 M4946506TR0680HS73 M4946506TR0649FB12 M4946506TR0649FS73 M4946506TR0680HB12
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| Description |
Wire Wound Resistor, RESISTOR, WIRE WOUND, 5 W, 1 %, 150 ppm, 0.01 ohm, THROUGH HOLE MOUNT, AXIAL LEADED
Metal strip/Wire Resistor, RES,AXIAL,WIREWOUND,100M OHMS,1% /-TOL
RES WW 33M OHM 1% 3W AXL TH - Bulk
RES WW 100M OHM 1% 5W AXL TH - Tape and Reel
LVR-5,.3,1%,BULK - Bulk
Metal strip/Wire Resistor, RESISTOR, CURRENT SENSE, METAL strip, 3 W, 1 %, 0.0649 ohm, THROUGH HOLE MOUNT, AXIAL LEADED, ROHS COMPLIANT
RES WW 68M OHM 3% 3W AXL TH - Tape and Reel
RES WW 64.9M OHM 1% 3W AXL TH - Tape and Reel
Metal strip/Wire Resistor, RES,AXIAL,WIREWOUND,68M OHMS,3% /-TOL
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| File Size |
93.97K /
3 Page |
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it Online |
Download Datasheet
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USHA India LTD
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| Part No. |
2SC9011
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| Description |
Transistor. AM converter, AM/FM IF amplifier general purpose transistor. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic
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| File Size |
76.14K /
2 Page |
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it Online |
Download Datasheet |
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USHA India LTD
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| Part No. |
2SA954
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| Description |
Audio frequency amplifier. Collector-base voltage: Vcbo = -80V. Collector-emitter voltage: Vceo = -80V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 600mW.
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| File Size |
123.49K /
3 Page |
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it Online |
Download Datasheet |
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Cinch Connectors
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| Part No. |
12-142 13-142
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| Description |
Terminal Block; Number of Positions:12; Pitch Spacing:0.563"; Wire Size (AWG):10; Color:Black; Leaded Process Compatible:No; Number of Contacts:12; Peak Reflow Compatible (260 C):No 30 A, BARRIER strip TERMINAL BLOCK, 2 ROWS, 1 DECK
CONN BARRIER BLOCK .563 13 POS 30 A, BARRIER strip TERMINAL BLOCK, 2 ROWS, 1 DECK
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| File Size |
54.00K /
3 Page |
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it Online |
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SEME-LAB[Seme LAB]
Semelab(Magnatec)
TT electronics Semelab Limited
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| Part No. |
BDS12IG BDS10IG BDS11IG
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| Description |
Silicon NPN Epitiaxial base Transistor In TO257 Metal Package(NPN澶?欢????朵?绠?TO257???灏??))
SILICON NPN EPITAXIAL base IN TO257 METAL PACKAGE
Silicon NPN Epitiaxial base Transistor In TO257 Metal Package(NPN外延型硅晶体TO257金属封装)) 硅npn型Epitiaxial基地晶体TO257金属包（npn型外延型硅晶体管TO257金属封装））
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| File Size |
14.52K /
2 Page |
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it Online |
Download Datasheet |
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INTERSIL[Intersil Corporation]
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| Part No. |
BD795 BD798 BD796 BD801 BD802 BD800 BD799 BD797
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| Description |
EPITAXIAL-base,SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
ECONOLINE: RJ & RG - Dual Output from a Single Input Rail - 3kVDC & 4kVDC Isolation - Optional Continuous Short Circuit Protected - Custom Solutions Available - UL94V-0 Package Material - Efficiency to 84%
EPITAXIAL-base/SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
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| File Size |
138.23K /
3 Page |
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it Online |
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Price and Availability
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