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IRF[International Rectifier]
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| Part No. |
IRLMS6802PBF IRLMS6802TRPBF
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| OCR Text |
...5sec. Starting TJ = 25C, L = 6.8mh
RG = 25, IAS = -3.0A. (See Figure 12)
2
www.irf.com
IRLMS6802PbF
100
VGS -7.50V -5.00V -4.00V -3.50V -3.00V -2.50V -2.00V BOTTOM -1.50V TOP
100
-I D , Drain-to-Source Current (A)
-I... |
| Description |
Ultra Low On-Resistance
HEXFET Power MOSFET
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| File Size |
145.90K /
7 Page |
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it Online |
Download Datasheet
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TT electronics Semelab, Ltd.
International Rectifier, Corp.
Seme LAB
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| Part No. |
IRFN140SMD
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| OCR Text |
...ms, d 2% 2) @ VDD = 25V , L 0.8mh , RG = 25W , Peak IL = 22A , Starting TJ = 25C 3) @ ISD 22A , di/dt 170A/ms , VDD BVDSS , TJ 150C , SUGGESTED RG = 9.1W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: s... |
| Description |
ER CET 0 22 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel Power MOSFET(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)) N沟道功率MOSFET（减振钢板基本：100V的，身份证（续）3.9A，的Rds（on）：0.077Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本100V的，身份证（续）3.9A时，RDS（对）：0.077Ω））
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| File Size |
22.23K /
2 Page |
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it Online |
Download Datasheet |
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