| |
|
 |
ST Microelectronics
|
| Part No. |
STB9NK90Z
|
| OCR Text |
...t Capacitance VGS=0, VDS =0V to 720v Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=720v, ID = 8A VGS =10V (see Figure 19)
Table 6.
Symbol td(on) tr td(off) tf tr(Voff) tf tc
Switching times
Parameter Turn-on Delay Time ... |
| Description |
N-Channel Enhancement Mode MOSFET
|
| File Size |
400.03K /
15 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
ST Microelectronics
|
| Part No. |
STB3NC90Z-1 STP3NC90ZFP
|
| OCR Text |
...s q g total gate charge v dd = 720v, i d = 3a, v gs = 10v 27 38 nc q gs gate-source charge 8 nc q gd gate-drain charge 10 nc symbol parameter test conditions min. typ. max. unit t r(voff) off-voltage rise time v dd = 720v, i d = 3 a, ... |
| Description |
N-CHANNEL 900V 3.2 OHM 3.5A TO-220/TO-220FP/I2PAK ZENER-PROTECTED POWERMESH III MOSFET
|
| File Size |
339.81K /
11 Page |
View
it Online |
Download Datasheet |
| |
|
|
International Rectifier
|
| Part No. |
IRFAF50 IRFAF50PBF IRFAF50-15
|
| OCR Text |
...=250A VDS > 15V, IDS =4.0A VDS=720v, VGS=0V VDS =720v VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS = 10V, ID = 6.2A VDS = 450V VDD = 400V*, ID =6.2A, RG =2.35
IGSS Gate-to-Source Leakage Forward I GSS Gate-to-Source Leakage Reverse Tota... |
| Description |
Simple Drive Requirements
900V Single N-Channel Hi-Rel MOSFET in a TO-204AA package
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS
6.2 A, 900 V, 1.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
|
| File Size |
146.58K /
7 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
