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NJRC[New Japan Radio]
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| Part No. |
NJG1535HD3
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| OCR Text |
...2.7V VDD terminal CONDITIONS 36 7.5 210 7.5 -40~+85 -55~+150 UNITS dBm V mW V C C
s ELECTRICAL CHARACTERISTICS (General conditions: Ta=+2...9GHz, PIN=25dBm f=1000+1001MHz, Pin=26dBm *1 f=2000+2001MHz, Pin=26dBm *1 f=0.1~2.5GHz, ON State f=0... |
| Description |
SPDT SWITCH GaAs MMIC
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| File Size |
205.08K /
12 Page |
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it Online |
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Matsshita / Panasonic
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| Part No. |
2SC5363TENTATIVE
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| OCR Text |
... f = 0.9GHz 40 100 0.4 10 6.5 1.7 min typ max 1 1 200 0.7 pF GHz dB dB Unit A A
0 to 0.1
0.20.1
+0.1
1
Transistor
PC -- Ta
150 60 Ta=25C 125 50 25
2SC5363
IC -- VCE
30 VCE=3V
IC -- VBE
Collector power dissipation... |
| Description |
2SC5363(Tentative) - NPN Transistor
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| File Size |
45.64K /
3 Page |
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it Online |
Download Datasheet
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panasonic
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| Part No. |
2SC5363
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| OCR Text |
... f = 0.9GHz 40 100 0.4 10 6.5 1.7 min typ max 1 1 200 0.7 pF GHz dB dB Unit A A
0.750.15
0.20.1
q
0.80.1 1.60.15
q
High transition frequency fT. Small collector output capacitance Cob. SS-Mini type package, allowing downsi... |
| Description |
SSMini3-G1
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| File Size |
42.78K /
3 Page |
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it Online |
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Sanyo
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| Part No. |
FC151
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| OCR Text |
...B=-15V, IE=0 VEB=-2V, IE=0 20 0.7 0.93 3.0 1.5 5 2.0 3.0 1.0 1.5 15 mV GHz pF dB dB Conditons Ratings min typ max -0.1 -0.1 10 0 Unit A A
...9GHz VCE=-10V, IC=-3mA, f=0.9GHz
Note:The specifications shown above are for each individual tran... |
| Description |
PNP Epitaxial Planar Silicon Composite Transistor
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| File Size |
161.66K /
5 Page |
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it Online |
Download Datasheet
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Price and Availability
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