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SamHop Microelectronics...
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| Part No. |
STM4436
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| OCR Text |
...ture. d.starting t j =25 c,l=0.5mh,v dd = 20v.(see figure13) e.mounted on fr4 board of 1 inch 2 , 2oz. _ _
www.samhop.com.tw 3 tj( c ) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs... |
| Description |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
110.45K /
8 Page |
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SeCoS Halbleitertechnol...
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| Part No. |
SSQ07N60J
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| OCR Text |
...otes: 1. e as condition: l=19.5mh, i l =7a, v dd =50v, v gs =10v, r g =0 , t j =25c. 2. pulse test : pulse width 300 Q s, duty cycle 2%. Q 3. the typical parameter of t on is negligible and is dominated by circuit inductan ce. ... |
| Description |
N-Channel Enhancement Mode Power MOSFET
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| File Size |
465.77K /
3 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
STUD20L01A
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| OCR Text |
...ting. d.starting t j =25 c,l=0.5mh,v dd = 50v.(see figure13) _ _ _ 1 1.8 3 22
stu/d20l01a ver 1.0 www.samhop.com.tw dec,02,2011 3 tj( c)...9a v gs =10v i d =10a v gs =4v v gs =10v 40 32 24 16 8 1
stu/d20l01a ver 1.0 www.samhop.com.tw dec... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
103.26K /
8 Page |
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it Online |
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Xian Semipower Electron...
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| Part No. |
SWF634
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| OCR Text |
... junction temperature. 2. l = 4.5mh, i as = 9a, v dd = 50v, r g =50?, starting t j = 25 o c 3. i sd 9a, di/dt = 300a/us, v dd bv dss , staring t j =25 o c 4. pulse test : pulse width 300us, duty cycle 2% 5. essentially independent of op... |
| Description |
N-channel MOSFET
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| File Size |
708.74K /
7 Page |
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it Online |
Download Datasheet |
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