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Infineon
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| Part No. |
BFP640
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| OCR Text |
... 1 ma, i b = 0 v (br)ceo 4 4.5 - v collector-emitter cutoff current v ce = 13 v, v be = 0 i ces - - 30 a collector-base cutoff current v cb = 5 v, i e = 0 i cbo - - 100 na emitter-base cutoff current v eb = 0.5 v, i c = 0 ... |
| Description |
Digital Transistors - NPN SiGe RF Transistor, high gain low noise RF transistor in SOT343 Package, 4V, 50mA
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| File Size |
271.06K /
8 Page |
View
it Online |
Download Datasheet
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Infineon SIEMENS[Siemens Semiconductor Group]
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| Part No. |
BFP280W Q62702-F1504
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| OCR Text |
...urrent gain
IC = 3 mA, VCE = 5 V
Semiconductor Group
2
Dec-12-1996
BFP 280W
Electrical Characteristics at TA = 25C, unless...1.5 2 -
IC = 6 mA, VCE = 5 V, f = 500 MHz
Collector-base capacitance
Ccb Cce
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VCB = 5 V,... |
| Description |
NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems) From old datasheet system NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)
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| File Size |
59.70K /
7 Page |
View
it Online |
Download Datasheet
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SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
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| Part No. |
BFP280 Q62702-F1378
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| OCR Text |
...urrent gain
IC = 3 mA, VCE = 5 V
Semiconductor Group
2
Dec-11-1996
BFP 280
Electrical Characteristics at TA = 25C, unless ...1.5 2 -
IC = 6 mA, VCE = 5 V, f = 500 MHz
Collector-base capacitance
Ccb Cce
-
VCB = 5 V,... |
| Description |
NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems) NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) NPN硅射频晶体管(对于低噪音,在移动通信系统的低功耗放大器 NPN Silicon RF Transistor (For low noise low-power amplifiers in mobile communication systems) From old datasheet system
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| File Size |
60.12K /
7 Page |
View
it Online |
Download Datasheet
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Price and Availability
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