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  4mh Datasheet PDF File

For 4mh Found Datasheets File :: 321    Search Time::1.25ms    
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    VN82004 VN820_04 VN820 VN820-B5 VN820-B513TR VN820PT VN820PT13TR VN820SO VN820SO13TR VN820SP VN820SP13TR

STMICROELECTRONICS[STMicroelectronics]
Part No. VN82004 VN820_04 VN820 VN820-B5 VN820-B513TR VN820PT VN820PT13TR VN820SO VN820SO13TR VN820SP VN820SP13TR
OCR Text ...VCC Maximum Switching Energy (L=4mh; RL=0; Vbat=13.5V; Tjstart=150C; IL=13A) Maximum Switching Energy (L=3.7mH; RL=0; Vbat=13.5V; Tjstart=150C; IL=13A) Maximum Switching Energy (L=4.48mH; RL=0; Vbat=13.5V; Tjstart=150C; IL=13A) Power Dissip...
Description HIGH SIDE DRIVER

File Size 542.02K  /  35 Page

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    CEF09N6

CET[Chino-Excel Technology]
Part No. CEF09N6
OCR Text ... a Condition VDD =50V, L=23.4mh RG=25 Min Typ Max Unit DRAIN-SOURCE AVALANCHE RATING 6 EAS IAS 500 9 mJ A OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDS...
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor

File Size 43.44K  /  5 Page

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    IRF644A

Fairchild Semiconductor
Part No. IRF644A
OCR Text ...imum Junction Temperature (2) L=4mh, IAS=14A, VDD=50V, RG=27, Starting TJ =25C (3) ISD 14A, di/dt 250A/s, VDD BV DSS , Starting TJ =25C (4) Pulse Test: Pulse Width = 250s, Duty Cycle 2% (5) Essentially Independent of Operating Temperatu...
Description Advanced Power MOSFET

File Size 224.60K  /  7 Page

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    IRHE9230 IRHE93230 2048

International Rectifier, Corp.
Part No. IRHE9230 IRHE93230 2048
OCR Text ... -25V, starting TJ = 25C, L= 21.4mh Peak IL = -4.0A, VGS = -12V ISD -4.0A, di/dt -150A/s, VDD -200V, TJ 150C Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiat...
Description 200V, P-Channel Surface Mount Radiation Hardened Power MOSFET(200V,P沟道表贴型抗辐射功率MOS场效应管) 00V,P通道表面安装抗辐射功率MOSFET00V的电压,P沟道表贴型抗辐射功率马鞍山场效应管)
From old datasheet system
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)

File Size 105.99K  /  8 Page

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    MITSUMI[Mitsumi Electronics, Corp.]
Part No. K5-S K5-N K7-T3 K5-C K5-N1 K5-R2 K5-S2 K7-D K7-H5 K7-J K7-J5 K7-P K7-T K7-T1
OCR Text ... 7.6 Specifications (1) 1~4mh (2) 40~100kHz (3) F:2% L:5% (4) (5) 40~60 0.6 K5-H Specifications (1) 1~1000H (2) 0.1~20MHz (3) F:2% L:5% (4) 10~10000pF (5) 50~100 K5-C o0.4 3.5 0.8 5.5 3.5 5.6 -0.1 +0.3 0.6 3....
Description Adjustable Type Coils

File Size 178.77K  /  4 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. IRFS244B IRFS244BFP001
OCR Text ...m junction temperature 2. L = 7.4mh, IAS = 10.2A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 14A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating tem...
Description 250V N-Channel B-FET / Substitute of IRFS244 & IRFP244A
250V N-Channel MOSFET

File Size 669.23K  /  8 Page

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    FQA70N10

FAIRCHILD[Fairchild Semiconductor]
Part No. FQA70N10
OCR Text ...m junction temperature 2. L = 0.4mh, IAS = 70A, VDD = 25V, RG = 25 , Starting TJ = 25C 3. ISD 70A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating tempe...
Description 100V N-Channel MOSFET

File Size 636.16K  /  8 Page

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    L6569A L6569AD L6569D L6569

STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
Part No. L6569A L6569AD L6569D L6569
OCR Text ...pF 630V PTC 150ohm STD2NB50-1 2.4mh value 6/13 L6569 L6569A Figure 2. Waveforms (L6569) VS VSUVP VBOOT-VOUT VS =Ron*CBOOT 4.6V(typ) VCF LVG T1 TC D95IN250B Figure 3. Waveforms (L6569A) VS VSUVP ...
Description HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR 高压半桥驱动器,振荡

File Size 108.80K  /  13 Page

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    FQU5P10 FQD5P10 FQD5P10TF FQD5P10TM

FAIRCHILD[Fairchild Semiconductor]
Part No. FQU5P10 FQD5P10 FQD5P10TF FQD5P10TM
OCR Text ...m junction temperature 2. L = 6.4mh, IAS = -3.6A, VDD = -25V, RG = 25 , Starting TJ = 25C 3. ISD -4.5A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating ...
Description 100V P-Channel MOSFET
100V P-Channel QFET

File Size 646.01K  /  9 Page

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    FQAF58N08

FAIRCHILD[Fairchild Semiconductor]
Part No. FQAF58N08
OCR Text ...m junction temperature 2. L = 0.4mh, IAS = 44A, VDD = 25V, RG = 25 , Starting TJ = 25C 3. ISD 57.5A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating tem...
Description 80V N-Channel MOSFET

File Size 612.07K  /  8 Page

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For 4mh Found Datasheets File :: 321    Search Time::1.25ms    
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