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  43.2-ohm Datasheet PDF File

For 43.2-ohm Found Datasheets File :: 6582    Search Time::5.906ms    
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    PTFB211501F PTFB211501E

Infineon Technologies AG
Part No. PTFB211501F PTFB211501E
OCR Text ... 20 10 * * * ACP Up 41 43 45 47 49 0 Output Power (dBm) RF Characteristics Single-carrier WCDMA Measurements (tested in Infineon test fixture) VDD = 30 V, IDQ = 1.2 A, POUT = 40 W AVG, = 2170 MHz, 3GPP signal, channel b...
Description Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 ?2170 MHz

File Size 349.89K  /  12 Page

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    MIMIX[Mimix Broadband]
Part No. XP1028-BD-EV1 XP1028-BD-000V XP1028-BD
OCR Text 43.5-46.5 GHz GaAs MMIC Power Amplifier April 2007 - Rev 17-Apr-07 P1028-BD Chip Device Layout Features Excellent Saturated Output S...2 Drain Bias Voltage (Vd1,2,3) Gate Bias Voltage (Vg1,2,3) Supply Current (Id) (Vd=5.0V, Vg=-0.5V Ty...
Description 43.5-46.5 GHz GaAs MMIC Power Amplifier

File Size 342.30K  /  5 Page

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    AFT09S220-02N AFT09S220-02NR3

NXP Semiconductors
Part No. AFT09S220-02N AFT09S220-02NR3
OCR Text ...) (w) ? d (%) am/pm ( ? ) 920 2.43 ? j5.36 2.30 + j5.40 3.95 ? j2.04 17.4 54.9 306 55.7 ?4.5 940 2.73 ? j5.85 2.65 + j5.83 4.58 ? j1.60 17.2 54.8 303 55.2 ?4.2 960 3.29 ? j6.47 3.10 + j6.30 5.04 ? j1.02 17.0 54.9 311 56.5 ?4.7 f (mhz) z sou...
Description N-Channel Enhancement-Mode Lateral MOSFET

File Size 473.18K  /  19 Page

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    AP2509

Teledyne Technologies Incorporated
Part No. AP2509
OCR Text ...ckage for Amplifiers 0.450 (11.43) DIA. 0.208 (5.28) MAX. 0.185 0.015 (4.70 0.38) 0.025 (0.64) SPECIFICATIONS* Parameter Frequency (Mi...2.1:1 below 20 MHz. 1.0 dB higher between 100-200 MHz and 2000-2500 MHz. SMTO-8 Package for Ampl...
Description 10 TO 2500 MHzTO-8 CASCADABLE AMPLIFIER

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    ASL580

Advanced Semiconductor Business Inc.
Part No. ASL580
OCR Text ...39.5 output ip2 1),2) dbm 43 52 52 45 cso 3) dbc 60 ctb 3) dbc > 70 current ma 120 device voltage v 8 1) oip3 and oip2 are measured with two tones at an output power of +10 dbm/tone separated by 1 mhz(u...
Description Wideband Linear Amplifier MMIC

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    FP2189-RFID FP2189-PCB900S FP2189-G FP2189-PCB1900S FP2189-PCB2140S FP2189

WJ Communication. Inc.
Part No. FP2189-RFID FP2189-PCB900S FP2189-G FP2189-PCB1900S FP2189-PCB2140S FP2189
OCR Text 43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz Product Description The FP2189 is a high performance 1-Watt HFET (Heteros...2 GND 3 RF OUT Applications * * * * * * Mobile Infrastructure CATV / DBS W-LAN / ISM RFID Def...
Description 1 - Watt HFET

File Size 641.36K  /  13 Page

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    Infineon
Part No. CGY0819
OCR Text ...q=300mA 50 49 48 47 46 45 44 43 42 41 40 820 825 830 835 f [MHz] 840 845 850 60 59 58 57 56 55 54 53 52 51 50 820 ...2 0 2 4 6 8 Pin [dBm] Id [mA] ACPR [dBc] 80 70 60 50 40 30 20 10 0 14 16 18 20 22 Pout [dBm] 24 26 ...
Description MESFET PA

File Size 339.69K  /  18 Page

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Part No. 1008LG221KTE 1008LG471KTE 1008LG561KTE 1008LG152JTE 1008LG272MTE 1008LG271JTE
OCR Text ...z 1.4 17 19 22 26 28 30 43 46 49 51 50 50 54 53 61 61 1.5 14 15 16 18 22 25 34 35 38 41 43 44 46 55 60 61 1.8 11 12 14 17 20 23 32 39 37 45 49 48 56 59 64 71 2.0 8 9 10 12 15 16 22 26 27 28 30 30 ...
Description GENERAL PURPOSE INDUCTOR

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    MMH3111NT108

Freescale Semiconductor, Inc
Part No. MMH3111NT108
OCR Text ...PUT INTERCEPT POINT (dBm) 47 45 43 41 39 37 35 4 4.2 4.4 4.6 4.8 5 VDD, DRAIN VOLTAGE (V) f = 900 MHz, 10 dBm per tone Two-Tone Measurements, 1 MHz Tone Spacing IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 48 VDD = 5 Vdc, f = 900 MHz, 10 d...
Description Heterostructure Field Effect Transistor (GaAs HFET)

File Size 295.50K  /  16 Page

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