400-900v pdf Datasheet P11 Full Text Search --- IC-ON-LINE


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400-900v Datasheet PDF File

For 400-900v Found Datasheets File :: 854 Search Time::5.109ms
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				ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
Part No.	L6712AD L6712ADTR L6712QTR L6712 L6712A L6712AQ L6712AQTR L6712D L6712DTR L6712Q
OCR Text	... REF_IN/OUT = 0.8V to 3.3V -2.0 400 5 3 0.4 OVP Active VIDx See Table 1, VID "11x" VID = "110" VIDx See Table 1, VID "111" 4.75 -0.9 -1.0 ...900V to 3.300V as shown in Figure 2. Different voltages can be reached simply changing the Remote Am...
Description	TWO-PHASE INTERLAVED DC/DC CONTROLLER TWO-PHASE INTERLEAVED DC/DC CONTROLLER
File Size	1,072.82K / 27 Page	View it Online	Download Datasheet

				FUJI[Fuji Electric]
Part No.	2SK3875-01 28F256L18
OCR Text	...D=f(Tc) FUJI POWER MOSFET 400 20 Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25 C 20V 350 16 300 6.5V 250 12 PD [W] 200 ID [A] 8 4 VGS=5.5V 0 0 25 50 75 100 125 150 0 4 8 12 16 20 150 1...
Description	Power MOSFET / Super FAP-G Series FUJI POWER MOSFET Super FAP-G Series
File Size	99.53K / 4 Page	View it Online	Download Datasheet

				EUPEC[eupec GmbH]
Part No.	FS35R12KE3G
OCR Text	..., Tvj= 25C IGES - - 400 nA prepared by: M. Munzer approved: M. Hierholzer date of publication: 2002-03-04 revision: 3 ...900V, VCEmax= VCES - LCE *di/dt Eon tf 65 90 3,5 ns ns mJ td,off 420 520 ns ns tr 30 45 ns ns td,on ...
Description	IGBT-Modules
File Size	111.58K / 8 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SIDC110D170H Q67050-A4179-A001
OCR Text	... tP = 10 ms sinusoidal 930 400 -55...+150 A Maximum repetitive forward current limited by Tjmax Operating junction and storage te...900V I F= 2 0 0 A di/dt=960 A/s V R =900V I F= 2 0 0 A di/dt=960 A/s V R =900V Conditions T j = 2...
Description	200 A, 1700 V, SILICON, RECTIFIER DIODE Fast switching diode chip in EMCON 3 -Technology
File Size	62.58K / 4 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	STU8NB90 6380
OCR Text	...AR , V DD = 50 V) Max Value 8.9 400 Unit A mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 A V GS = 0 Min. 900 1...
Description	N-CHANNEL 900V - 0.7 Ohm - 8.9A - Max220 PowerMESH MOSFET OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN N-CHANNEL 900V - 0.7 - 8.9A - Max220 PowerMESH TM MOSFET N-CHANNEL 900V - 0.7ohm - 8.9A - Max220 PowerMESH MOSFET From old datasheet system
File Size	46.89K / 5 Page	View it Online	Download Datasheet

				eupec GmbH
Part No.	FZB1200BR12KE3
OCR Text	... - - 5 mA - - 400 nA prepared by: MOD-D2; Mark Munzer approved: SM TM; Christoph Lubke date of publication: 2002-...900V, VCEmax= VCES - LsCE * cdi/dtc - 4800 - A LsCE RCC/EE - 12 - nH -...
Description
File Size	200.26K / 9 Page	View it Online	Download Datasheet

				eupec GmbH
Part No.	FZB1200BR17KF6CB2 FZ1200R17KF6CB2
OCR Text	... GE = 20V, Tvj = 25C IGES 400 nA prepared by: A. Wiesenthal approved by: Christoph Lubke; 12.04.2001 date of publication: 05....900V VGE = 15V, RG = 1,2W, Tvj = 25C VGE = 15V, RG = 1,2W, Tvj = 125C Anstiegszeit (induktive Last) ...
Description	Hochstzulassige Werte / Maximum rated values IGBT Power Module
File Size	169.66K / 9 Page	View it Online	Download Datasheet

				Apex Microtechnology Corporation ETC[ETC]
Part No.	PA95
OCR Text	...EQUENCY, F (Hz) 200 800 1000 400 600 TOTAL SUPPLY VOLTAGE, VS (V) VOLTAGE DROP FROM SUPPLY, V S - VO (V) SMALL SIGNAL RESPONSE 120...900V. EXTERNAL COMPONENTS The compensation capacitor Cc must be rated for the total supply volta...
Description	HIGH VOLTAGE POWER OPERATIONAL AMPLIFIER
File Size	61.90K / 4 Page	View it Online	Download Datasheet

				FUJI[Fuji Electric]
Part No.	2SK3532 2SK3532-01MR
OCR Text	...d(off) EAS [mJ] t [ns] 400 IAS=4A td(on) 10 1 IAS=6A tr 200 10 0 0 -1 10 10 0 10 1 0 25 50 75 100 125 150 ID [A] starting Tch [C] 3 2SK3532-01MR FUJI POWER MOSF...
Description	N-CHANNEL SILICON POWER MOSFET N Channel Silicon Power MOSFET
File Size	110.69K / 4 Page	View it Online	Download Datasheet

				http:// DYNEX[Dynex Semiconductor] Dynex Semiconductor Ltd.
Part No.	DIM200MHS17-A000
OCR Text	...est Conditions Max. 1700 20 200 400 1488 7.5 4000 Units V V A A W kA2s V 2/10 Caution: This device is sensitive to electrostatic disch...900V, dIF/dt = 3000A/s Test Conditions IC = 200A VGE = 15V VCE = 900V RG(ON) = RG(OFF) = 4.7 L ~ 100...
Description	Half Bridge IGBT Module
File Size	146.53K / 10 Page	View it Online	Download Datasheet

For 400-900v Found Datasheets File :: 854 Search Time::5.109ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |