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ST Microelectronics
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| Part No. |
STP4NB50 STP4NB50FP
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| OCR Text |
...v ds = v gs i d = 250 m a 345v r ds(on) static drain-source on resistance v gs = 10v i d = 1.9 a 2.5 2.8 w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 3.8 a dynamic symbol parameter test condit... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET
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| File Size |
143.05K /
7 Page |
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it Online |
Download Datasheet
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ST Microelectronics
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| Part No. |
P7NB60
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| OCR Text |
...voltage v ds =v gs i d =250 m a 345v r ds(on) static drain-source on resistance v gs = 10v i d = 3.6 a 1.0 1.2 w i d(o n) on state drain current v ds >i d(on) xr ds(on)max v gs =10v 7.2 a dynamic symbol parameter test conditions min. typ. m... |
| Description |
Search --To STP7NB60FP
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| File Size |
144.86K /
9 Page |
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it Online |
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ST Microelectronics
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| Part No. |
P7NB80FP
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| OCR Text |
...oltage v ds =v gs i d = 250 m a 345v r ds(on) static drain-source on resistance v gs =10v i d = 3.2 a 1.2 1.5 w i d(o n) on state drain current v ds >i d(o n) xr ds(on )ma x v gs =10v 6.5 a dynamic symbol parameter test conditions min. typ.... |
| Description |
Search To STP7NB80
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| File Size |
136.25K /
9 Page |
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it Online |
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ST Microelectronics
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| Part No. |
P7NC80ZF
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| OCR Text |
... voltage v ds =v gs ,i d = 250a 345v r ds(on) static drain-source on resistance v gs =10v,i d = 3.3 a 1.3 1.5 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds >i d(on) xr ds(on)max, i d = 3.3 a 6... |
| Description |
Search --To STP7NC80Z
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| File Size |
441.81K /
13 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STW6NB100
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| OCR Text |
...v ds = v gs i d = 250 m a 345v r ds(on) static drain-source on resistance v gs = 10 v i d = 2.7 a 2.5 2.8 w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 6a dynamic symbol parameter test conditio... |
| Description |
N-CHANNEL 1000V - 2.3 OHM - 5.4A - TO-247 POWERMESH MOSFET
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| File Size |
254.77K /
8 Page |
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it Online |
Download Datasheet |
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SGS Thomson Microelectronics
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| Part No. |
STP11NM60FP
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| OCR Text |
...ltage v ds =v gs ,i d = 250 m a 345v r ds(on) static drain-source on resistance v gs = 10v, i d = 5.5a 0.4 0.45 w symbol parameter test condition s min. typ. max. unit g fs (1) forward transconductance v ds >i d(on) xr ds(on)max, i d = 5.5a... |
| Description |
N-CHANNEL 600V 0.4 OHM 11A TO-220/D2PAK/I2PAK/TO-220FP MDMESH POWER MOSFET
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| File Size |
195.16K /
12 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STW9NB80
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| OCR Text |
...age v ds = v gs , i d = 250 a 345v r ds(on) static drain-source on resistance v gs = 10v, i d = 4.6a 0.85 1 w symbol parameter test conditions min. typ. max. unit g fs forward transconductance v ds > i d(on) x r ds(on)max, i d = 4... |
| Description |
N-CHANNEL 900V - 0.85 OHM - 9.3A - TO-247 POWERMESH MOSFET
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| File Size |
263.48K /
8 Page |
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it Online |
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