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250s Datasheet PDF File

For 250s Found Datasheets File :: 1919 Search Time::1.718ms
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				JILIN SINO-MICROELECTRONICS CO., LTD. http://
Part No.	JCS740F-O-F-N-B JCS740C-O-C-N-B JCS740S-O-S-N-B JCS740B-O-B-N-B
OCR Text	... D [A] 25 150 1 Notes 1. 250s pulse test 2. TC=25 1 0.1 Notes 1.250s pulse test 2.VDS=40V 2 4 6 8 10 1 10 V DS [V] V GS [V] On-Resistance Variation vs. Drain Current and Gate Voltage 1.05 Body Diode Forward V...
Description	N-CHANNEL MOSFET
File Size	1,252.24K / 12 Page	View it Online	Download Datasheet

				JILIN SINO-MICROELECTRONICS CO., LTD.
Part No.	JCS12N65FT-O-F-N-B JCS12N65CT-O-C-N-B JCS12N65T
OCR Text	...150 1 25 1 Notes: 1. 250s pulse test 2. TC=25 0.1 2 4 6 Notes: 1.250s pulse test 2.VDS=40V 8 10 1 10 VDS [V] VGS [V] On-Resistance Variation vs. Drain Current and Gate Voltage 0.85 Body Diode Forward Volta...
Description	N-CHANNEL MOSFET
File Size	1,131.35K / 10 Page	View it Online	Download Datasheet

				JILIN SINO-MICROELECTRONICS CO., LTD.
Part No.	JCS10N65FT-O-F-N-B JCS10N65CT-O-C-N-B JCS10N65T
OCR Text	... 150 1 25 1 Notes: 1. 250s pulse test 2. TC=25 0.1 Notes: 1.250s pulse test 2.VDS=40V 2 4 6 8 10 1 10 VDS [V] VGS [V] On-Resistance Variation vs. Drain Current and Gate Voltage 1.00 0.95 0.90 Body Diode For...
Description	N-CHANNEL MOSFET
File Size	1,049.05K / 10 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDA28N50F
OCR Text	... 10 25 C o 1 Notes: 1. 250s Pulse Test 2. TC = 25 C o Notes: 1. VDS = 20V 2. 250s Pulse Test 0.3 0.06 0.1 1 10 20 1 VDS,Drain-Source Voltage[V] 4 5 6 7 VGS,Gate-Source Voltage[V] 8 Figure 3. On-Resistance...
Description	N-Channel MOSFET 500V, 28A, 0.175Ω
File Size	527.74K / 8 Page	View it Online	Download Datasheet

				MICROSEMI POWER PRODUCTS GROUP Advanced Power Technology
Part No.	APTGF150DH120
OCR Text	...e (V) Transfer Characteristics 250s Pulse Test < 0.5% Duty cycle 250s Pulse Test < 0.5% Duty cycle Output characteristics (VGE=10V) 175 150 125 100 75 50 25 0 4 0 1 2 3 VCE, Collector to Emitter Voltage (V) Gate Charge IC = 150A TJ = 25...
Description	200 A, 1200 V, N-CHANNEL IGBT Asymmetrical Bridge - IGBT
File Size	294.40K / 5 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	RFD16N03L RFD16N03 RFD16N03LSM
OCR Text	... CAPABILITY PULSE DURATION = 250s, TC = +25oC ID(ON), ON-STATE DRAIN CURRENT (A) 100 VGS = 10V ID, DRAIN CURRENT (A) 75 VGS = 4.5V VGS = 4V VGS = 5V VDD = 15V 100 -55oC +175oC 75 +25oC 50 50 25 VGS = 3.5V VGS = 3V 25 PU...
Description	16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs
File Size	130.28K / 7 Page	View it Online	Download Datasheet

				JILIN SINO-MICROELECTRONICS CO., LTD.
Part No.	JCS12N60FT-O-F-N-B JCS12N60CT-O-C-N-B JCS12N60T
OCR Text	...150 1 25 1 Notes: 1. 250s pulse test 2. TC=25 0.1 2 4 6 Notes: 1.250s pulse test 2.VDS=40V 8 10 1 10 VDS [V] VGS [V] On-Resistance Variation vs. Drain Current and Gate Voltage 0.85 Body Diode Forward Volta...
Description	N-CHANNEL MOSFET
File Size	1,123.07K / 10 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APTGF300A120
OCR Text	...e (V) Transfer Characteristics 250s Pulse Test < 0.5% Duty cycle 250s Pulse Test < 0.5% Duty cycle Output characteristics (VGE=10V) 350 300 250 200 150 100 50 0 4 0 1 2 3 VCE, Collector to Emitter Voltage (V) Gate Charge IC = 300A TJ = ...
Description	Phase Leg - IGBT Phase leg NPT IGBT Power Module
File Size	301.84K / 5 Page	View it Online	Download Datasheet

				JILIN SINO-MICROELECTRONICS CO., LTD.
Part No.	JCS7N65F-O-F-N-B
OCR Text	... [A] 150 1 1 Notes 1. 250s pulse test 2. TC=25 0.1 Notes 1.250s pulse test 2.VDS=40V 2 4 6 8 10 1 10 VDS [V] VGS [V] On-Resistance Variation vs. Drain Current and Gate Voltage 1.40 1.35 1.30 Body Diode Forw...
Description	N-CHANNEL MOSFET
File Size	484.06K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor HARRIS[Harris Corporation]
Part No.	RFP30N06LE RF1S30N06LE RF1S30N06LESM
OCR Text	...CURRENT (A) PULSE DURATION = 250s, TC = +25oC VGS = 10V VDD = 15V 100 PULSE TEST PULSE DURATION = 250s DUTY CYCLE = 0.5% MAX -55oC +25oC +175oC ID , DRAIN CURRENT (A) 80 VGS = 5V VGS = 4.5V 80 60 VGS = 4V 40 VGS = 3V 20...
Description	30A/ 60V/ ESD Rated/ Avalanche Rated/ Logic Level N-Channel Enhancement-Mode Power MOSFETs 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs
File Size	91.05K / 6 Page	View it Online	Download Datasheet

For 250s Found Datasheets File :: 1919 Search Time::1.718ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |