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HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation] Intersil, Corp.
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| Part No. |
IRF234 IRF235 IRF236 IRF237
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| OCR Text |
... VDS = 25V, f = 1.0MHz, (Figure 11)
MIN -
TYP 600 180 52 5.0
MAX -
UNITS pF pF pF nH
Internal Source Inductance
LS
-
...4. VDD = 50V, starting TJ = 25oC, L = 4.5mH, RG = 25, peak IAS = 8.1A. See Figures 15, 16.
5-3
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| Description |
8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
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| File Size |
68.51K /
7 Page |
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Samsung semiconductor International Rectifier Intersil Corporation
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| Part No. |
IRF9150
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| OCR Text |
...25V, VGS = 0V, f = 1MHz (Figure 11)
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Internal Source Inductance
LS
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13
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nH
Thermal Resistance Junction to Case Th...4. VDD = 25V, starting TJ = 25oC, L = 3.2mH, RG = 25, peak IAS = 25A See Figures 15, 16.
Typical ... |
| Description |
-25A, -100V, 0.150 Ohm, P-Channel Power MOSFET
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| File Size |
56.86K /
7 Page |
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Intersil, Corp. INTERSIL[Intersil Corporation]
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| Part No. |
IRF9540 RF1S9540SM FN2282
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| OCR Text |
...25V, VGS = 0V, f = 1MHz (Figure 11)
MIN -100 -2 -19 5 -
TYP 0.150 7 16 65 47 28 70 14 56 1100 550 250 3.5
MAX -4 -25 -250 100 0.200 20 100 70 70 90 -
UNITS V V A A A nA S ns ns ns ns nC nC nC pF pF pF nH
Drain to Source On R... |
| Description |
19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB 19A/ 100V/ 0.200 Ohm/ P-Channel Power MOSFETs From old datasheet system
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| File Size |
59.17K /
7 Page |
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it Online |
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