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Infineon Technologies A...
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| Part No. |
IPG16N10S4-61
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| OCR Text |
... 16 a t c =100 c, v gs =10 v 1) 11 pulsed drain current 1) one channel active i d,pulse - 64 avalanche energy, single pulse 1, 3) e as i d =...2011-11-29
ipg16n10s4-61 parameter symbol conditions unit min. typ. max. thermal characteristics 1... |
| Description |
OptiMOS?T2 Power-Transistor
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| File Size |
142.34K /
9 Page |
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NXP Semiconductors N.V.
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| Part No. |
PSMN034-100BS
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| OCR Text |
... =v gs ; t j =25c; see figure 11 ; see figure 10 234v i d =1ma; v ds =v gs ; t j =-55c; see figure 10 ; see figure 11 --4.8v i dss dra...2011. all rights reserved. objective data sheet rev. 1 ? 27 october 2011 6 of 14 nxp semiconductors ... |
| Description |
N-channel 100 V 34.5 m standard level MOSFET in D2PAK.
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| File Size |
205.94K /
14 Page |
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it Online |
Download Datasheet
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