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INFINEON[Infineon Technologies AG]
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| Part No. |
IGP01N120H2 IGB01N120H2 IGD01N120H2 IGB01N120H2E3045A
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| OCR Text |
...OWER DISSIPATION
3A
2A
10w
Ptot,
1A
5W
0W 25C
50C
75C
100C
125C
150C
0A 25C
50C
75C
100C
125C
150C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (... |
| Description |
1200V HighSpeed2 and 600V HighSpeed IGBT for switching frequency from 30kHz upwards. Focus applications: Lamp ballast, power supplies ... IGBTs & DuoPacks - 1A 1200V HighSpeed2 IGBT D2Pak IGBTs & DuoPacks - 1A 1200V HighSpeed2 IGBT DPak IGBTs & DuoPacks - 1A 1200V HighSpeed2 IGBT TO220 HighSpeed 2-Technology From old datasheet system
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| File Size |
387.25K /
13 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRAUDAMP3
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| OCR Text |
...io Performance THD+N, 1W THD+N, 10w THD+N, 60W Dynamic Range Residual Noise 20Hz - 20kHz BW, A-Weighted Channel Separation Frequency Respons...15w (1/8 Rated Power) 2ch x 120W (Rated Power) Physical Specifications Dimensions
(Typical) 0.006... |
| Description |
120W x 6 Channel Class D Audio Power Amplifier using IRS20124S and IRF6645
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| File Size |
3,314.51K /
40 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RD06HHF1
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| OCR Text |
... (ohm) 8.75-j4.92 Conditions Po=10w, Vdd=12.5V,Pin=0.15w
RD06HHF1
MITSUBISHI ELECTRIC 5/7
REV.5 2 APRIL. 2004
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD06HHF1
S12 (mag) 0.008... |
| Description |
Silicon MOSFET Power Transistor 30MHz,6W
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| File Size |
197.08K /
7 Page |
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it Online |
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MIMIX[Mimix Broadband]
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| Part No. |
RD4
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| OCR Text |
...0 60,000 -56.0 5.0
1006532 - 10w
Min 3.7 45.0 +40.0 -20 0.0 0.0 0.0 -21.0 Typ -14.0 50 50.0 +/-0.5 8.0 -12.0 +41.0 52.0 6.5 Max 4.2 -9.5...15w
Min 3.7 45.0 +41.0 -20 0.0 0.0 0.0 -21.0 Typ -14.0 50 50.0 +/-0.5 8.0 -12.0 +42.0 52.0 8.5 Max ... |
| Description |
Units operate over the full 3.7-4.2 GHz frequency range
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| File Size |
174.32K /
1 Page |
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it Online |
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Price and Availability
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