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  0.846 Datasheet PDF File

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    SD1100C..LSERIES 2613 SD1100C04L SD1100C08L SD1100C12L SD1100C16L SD1100C20L SD1100C25L SD1100C30L SD1100C32L

International Rectifier
Part No. SD1100C..LSERIES 2613 SD1100C04L SD1100C08L SD1100C12L SD1100C16L SD1100C20L SD1100C25L SD1100C30L SD1100C32L
OCR Text ... 8830 9250 551 503 390 356 5510 0.84 V 0.94 0.88 KA2s KA2 s A A C A Conditions 180 conduction, half sine wave Double side (single side) ...846 772 598 546 I2 t Maximum I2t for fusing voltage 8460 0.78 t = 0.1 to 10ms, no volta...
Description 3200V 910A Std. Recovery Diode in a DO-200AB (B-Puk)package
3000V 910A Std. Recovery Diode in a DO-200AB (B-Puk)package
2500V 910A Std. Recovery Diode in a DO-200AB (B-Puk)package
2000V 1170A Std. Recovery Diode in a DO-200AB (B-Puk)package
1600V 1170A Std. Recovery Diode in a DO-200AB (B-Puk)package
1200V 1170A Std. Recovery Diode in a DO-200AB (B-Puk)package
800V 1170A Std. Recovery Diode in a DO-200AB (B-Puk)package
400V 1170A Std. Recovery Diode in a DO-200AB (B-Puk)package
From old datasheet system
STANDARD RECOVERY DIODES

File Size 110.01K  /  7 Page

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    NEC, Corp.
NEC Corp.
NEC[NEC]
Part No. 2SC4570 2SC4570-T1 2SC4570-T2 2SC4570T74-T2 2SC4570T72-T2 2SC4570T73-T2
OCR Text ... = 5 mA, f = 1 GHz) * Low Cob : 0.7 pF TYP. (@ VCB = 5 V, IE = 0, f = 1 MHz) * Super Mini Mold Package. (EIAJ : SC-70) 2.00.2 0.65 ...846 1.815 1.768 1.726 1.706 1.668 1.625 1.568 1.523 1.461 1.421 1.376 1.331 1.293 1.261 1.225 1.189 ...
Description NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD NPN硅外延晶体管超小型模
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
128 x 128 pixel format, LED or EL Backlight available

File Size 65.16K  /  8 Page

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    IN74LV14 IN74LV14N IN74LV14D IZ74LV14

INTEGRAL[Integral Corp.]
Part No. IN74LV14 IN74LV14N IN74LV14D IZ74LV14
OCR Text ...* * * Wide Operating Voltage: 1.0 to 5.5 V Optimized for Low Voltage applications: 1.0 to 3.6 V Accepts TTL input levels between VCC =2.7 V ...846 1.181 1.194 1.194 1.194 1.194 0.813 6 ...
Description HEX SCHMITT-TRIGGER INVERTER

File Size 143.06K  /  6 Page

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    SL74LV14 SL74LV14D SL74LV14N

SLS[System Logic Semiconductor]
Part No. SL74LV14 SL74LV14D SL74LV14N
OCR Text ...* * * Wide Operating Voltage: 1.0 to 5.5 V Optimized for Low Voltage applications: 1.0 to 3.6 V Accepts TTL input levels between VCC =2.7 V ...846 1.181 1.194 1.194 1.194 1.194 0.813 SLS System Logic Semiconductor 6 ...
Description Hex Schmitt-Trigger Inverter

File Size 42.60K  /  6 Page

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    Atmel
Part No. T4225B
OCR Text ...lters. It is recommended: RSB = 0 W for DCF 77.5 kHz, RSB = 10 kW for 60 kHz WWVB and RSB = open for JG2AS 40 kHz. 94 8381 DEC SB GND Figure 7. GND Figure 4. 94 8376 Q1A, Q1B In order to achieve a high selectivity, a crystal...
Description Low-Cost Time-Code Receiver
From old datasheet system

File Size 192.29K  /  16 Page

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    ML4769 ML4769CS ML4769ES

MICRO-LINEAR[Micro Linear Corporation]
Part No. ML4769 ML4769CS ML4769ES
OCR Text ...ge on any other pin ..... GND - 0.3V to VOUT + 0.3V Peak Switch Current (IPEAK) ......................................... 2A Average Switch ...846) 963-6300 (207) 324-4140 The output capacitor's Equivalent Series Resistance (ESR) and Equiva...
Description 2 Cell / Adjustable Output Boost Regulator with Load Disconnect
2 Cell, Adjustable Output Boost Regulator with Load Disconnect

File Size 239.00K  /  8 Page

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    SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. CGY59 Q68000-A8887
OCR Text ...4 Output 50 Ohm CGY59 3 0.5pF 1 2 100pF 50 Ohm Microstripline L = Inductor 6.8nH (Coilcraft 0805CS-060-XMBC) Siemens Aktienge...846 0.826 0.807 0.788 0.762 0.744 0.723 0.703 0.687 0.665 0.647 0.636 0.611 0.595 0.573 ANG -3.4 -6....
Description GaAs MMIC (Low noise preamplifier for mobile communication PCN DECT GSM in 2.7V to 6V systems)
From old datasheet system
GaAs MMIC (Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7V to 6V systems)

File Size 48.45K  /  8 Page

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    KGF1522

OKI electronic componet...
OKI electronic componets
OKI electronic eomponets
Part No. KGF1522
OCR Text ...P PACKAGE DIMENSIONS 1.80.1 0.850.05 0.6 +0.1 -0.05 0.4 +0.1 -0.05 1.10.15 0.36 0.74 3.00.2 1.50.15 0.3 MIN 0 to 0.15 Pa...846 0.843 0.838 0.835 0.830 0.826 0.825 0.823 -7.05 -8.02 -9.13 -10.06 -11.09 -12.05 -13.13 -14.05 -...
Description Small-Signal Amplifier
From old datasheet system

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    NES1823P-45

NEC Corp.
NEC[NEC]
Part No. NES1823P-45
OCR Text ...h can be achieved anywhere from 0.8 to 2.3 GHz. The device employs 0.9 m Tungsten Silicide gates, via holes, plated heat sink, and silicon d...846 0.822 0.804 0.774 0.739 0.707 0.688 0.673 0.676 0.697 0.726 0.748 0.778 0.803 0.826 0.838 0.854 ...
Description 45 W L / S-BAND PUSH-PULL POWER GaAs MES FET
45 W L, S-BAND PUSH-PULL POWER GaAs MES FET

File Size 45.26K  /  8 Page

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    2SC5369

NEC
Part No. 2SC5369
OCR Text ...ENSION (in mm) 2.10.1 1.250.1 0.2 -0 +0.1 1 0.65 0.65 2.00.2 1.3 2 3 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) 0.90.1 ...846 3.745 3.656 3.531 3.428 3.272 3.144 2.999 2.880 2.769 2.654 2.546 2.467 2.376 2.295 2.249 2.195 ...
Description NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION

File Size 70.59K  /  12 Page

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